Browse
Submit Data
Databases
API
Help

Dataset Information

28 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Light sources with bias tunable spectrum based on van der Waals interface transistors.

ABSTRACT: Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage -by suitably selecting the material forming the interfaces- and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods.

SUBMITTER: Henck H

PROVIDER: S-EPMC9263129 | biostudies-literature |

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

Van der Waals negative capacitance transistors.

Project description:The Boltzmann distribution of electrons sets a fundamental barrier to lowering energy consumption in metal-oxide-semiconductor field-effect transistors (MOSFETs). Negative capacitance FET (NC-FET), as an emerging FET architecture, is promising to overcome this thermionic limit and build ultra-low-power consuming electronics. Here, we demonstrate steep-slope NC-FETs based on two-dimensional molybdenum disulfide and CuInP2S6 (CIPS) van der Waals (vdW) heterostructure. The vdW NC-FET provides an average subthreshold swing (SS) less than the Boltzmann's limit for over seven decades of drain current, with a minimum SS of 28 mV dec-1. Negligible hysteresis is achieved in NC-FETs with the thickness of CIPS less than 20 nm. A voltage gain of 24 is measured for vdW NC-FET logic inverter. Flexible vdW NC-FET is further demonstrated with sub-60 mV dec-1 switching characteristics under the bending radius down to 3.8 mm. These results demonstrate the great potential of vdW NC-FET for ultra-low-power and flexible applications.

| S-EPMC6620276 | biostudies-literature

Ultrashort Vertical-Channel van der Waals Semiconductor Transistors.

Project description:Atomically thin 2D van der Waals semiconductors are promising candidates for next-generation nanoscale field-effect transistors (FETs). Although large-area 2D van der Waals materials have been successfully synthesized, such nanometer-length-scale devices have not been well demonstrated in 2D van der Waals semiconductors. Here, controllable nanometer-scale transistors with a channel length of ?10 nm are fabricated via vertical channels by squeezing an ultrathin insulating spacer between the out-of-plane source and drain electrodes, and the feasibility of high-density and large-scale fabrication is demonstrated. A large on-current density of ?70 µA µm-1 nm-1 at a source-drain voltage of 0.5 V and a high on/off ratio of ?107-109 are obtained in ultrashort 2D vertical channel FETs with monolayer MoS2 synthesized through chemical vapor deposition. The work provides a promising route toward the complementary metal-oxide-semiconductor-compatible fabrication of wafer-scale 2D van der Waals transistors with high-density integration.

| S-EPMC7029639 | biostudies-literature

Tunable Negative Poisson's Ratio in Van der Waals Superlattice.

Project description:Negative Poisson's ratio (NPR) materials are functional and mechanical metamaterials that shrink (expand) longitudinally after being compressed (stretched) laterally. By using first-principles calculations, we found that Poisson's ratio can be tuned from near zero to negative by different stacking modes in van der Waals (vdW) graphene/hexagonal boron nitride (G/h-BN) superlattice. We attribute the NPR effect to the interaction of p z orbitals between the interfacial layers. Furthermore, a parameter calculated by analyzing the electronic band structure, namely, distance-dependent hopping integral, is used to describe the intensity of this interaction. We believe that this mechanism is not only applicable to G/h-BN superlattice but can also explain and predict the NPR effect in other vdW layered superlattices. Therefore, the NPR phenomenon, which was relatively rare in 3D and 2D materials, can be realized in the vdW superlattices by different stacking orders. The combinations of tunable NPRs with the excellent electrical/optical properties of 2D vdW superlattices will pave a novel avenue to a wide range of multifunctional applications.

| S-EPMC8054987 | biostudies-literature

Light from van der Waals quantum tunneling devices.

Project description:The understanding of and control over light emission from quantum tunneling has challenged researchers for more than four decades due to the intricate interplay of electrical and optical properties in atomic scale volumes. Here we introduce a device architecture that allows for the disentanglement of electronic and photonic pathways-van der Waals quantum tunneling devices. The electronic properties are defined by a stack of two-dimensional atomic crystals whereas the optical properties are controlled via an external photonic architecture. In van der Waals heterostructures made of gold, hexagonal boron nitride and graphene we find that inelastic tunneling results in the emission of photons and surface plasmon polaritons. By coupling these heterostructures to optical nanocube antennas we achieve resonant enhancement of the photon emission rate in narrow frequency bands by four orders of magnitude. Our results lead the way towards a new generation of nanophotonic devices that are driven by quantum tunneling.

| S-EPMC6336876 | biostudies-literature

Photovoltaic effect in an electrically tunable van der Waals heterojunction.

Project description:Semiconductor heterostructures form the cornerstone of many electronic and optoelectronic devices and are traditionally fabricated using epitaxial growth techniques. More recently, heterostructures have also been obtained by vertical stacking of two-dimensional crystals, such as graphene and related two-dimensional materials. These layered designer materials are held together by van der Waals forces and contain atomically sharp interfaces. Here, we report on a type-II van der Waals heterojunction made of molybdenum disulfide and tungsten diselenide monolayers. The junction is electrically tunable, and under appropriate gate bias an atomically thin diode is realized. Upon optical illumination, charge transfer occurs across the planar interface and the device exhibits a photovoltaic effect. Advances in large-scale production of two-dimensional crystals could thus lead to a new photovoltaic solar technology.

| S-EPMC4138224 | biostudies-literature

Gate-tunable plasmons in mixed-dimensional van der Waals heterostructures.

Project description:Surface plasmons, collective electromagnetic excitations coupled to conduction electron oscillations, enable the manipulation of light-matter interactions at the nanoscale. Plasmon dispersion of metallic structures depends sensitively on their dimensionality and has been intensively studied for fundamental physics as well as applied technologies. Here, we report possible evidence for gate-tunable hybrid plasmons from the dimensionally mixed coupling between one-dimensional (1D) carbon nanotubes and two-dimensional (2D) graphene. In contrast to the carrier density-independent 1D Luttinger liquid plasmons in bare metallic carbon nanotubes, plasmon wavelengths in the 1D-2D heterostructure are modulated by 75% via electrostatic gating while retaining the high figures of merit of 1D plasmons. We propose a theoretical model to describe the electromagnetic interaction between plasmons in nanotubes and graphene, suggesting plasmon hybridization as a possible origin for the observed large plasmon modulation. The mixed-dimensional plasmonic heterostructures may enable diverse designs of tunable plasmonic nanodevices.

| S-EPMC8376888 | biostudies-literature

Tunable Phases of Moire Excitons in van der Waals Heterostructures.

Project description:Stacking monolayers of transition metal dichalcogenides into a heterostructure with a finite twist-angle gives rise to artificial moiré superlattices with a tunable periodicity. As a consequence, excitons experience a periodic potential, which can be exploited to tailor optoelectronic properties of these materials. Whereas recent experimental studies have confirmed twist-angle-dependent optical spectra, the microscopic origin of moiré exciton resonances has not been fully clarified yet. Here, we combine first-principles calculations with the excitonic density matrix formalism to study transitions between different moiré exciton phases and their impact on optical properties of the twisted MoSe2/WSe2 heterostructure. At angles smaller than 2°, we find flat, moiré-trapped states for inter- and intralayer excitons. This moiré exciton phase changes into completely delocalized states at 3°. We predict a linear and quadratic twist-angle dependence of excitonic resonances for the moiré-trapped and delocalized exciton phases, respectively.

| S-EPMC7729935 | biostudies-literature

Light generation and harvesting in a van der Waals heterostructure.

Project description:Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of semiconducting transition metal dichalcogenides MoS2 or WSe2 have been proposed as promising channel materials for field-effect transistors. Their high mechanical flexibility, stability, and quality coupled with potentially inexpensive production methods offer potential advantages compared to organic and crystalline bulk semiconductors. Due to quantum mechanical confinement, the band gap in monolayer MoS2 is direct in nature, leading to a strong interaction with light that can be exploited for building phototransistors and ultrasensitive photodetectors. Here, we report on the realization of light-emitting diodes based on vertical heterojunctions composed of n-type monolayer MoS2 and p-type silicon. Careful interface engineering allows us to realize diodes showing rectification and light emission from the entire surface of the heterojunction. Electroluminescence spectra show clear signs of direct excitons related to the optical transitions between the conduction and valence bands. Our p-n diodes can also operate as solar cells, with typical external quantum efficiency exceeding 4%. Our work opens up the way to more sophisticated optoelectronic devices such as lasers and heterostructure solar cells based on hybrids of 2D semiconductors and silicon.

| S-EPMC3971963 | biostudies-other

Planar and van der Waals heterostructures for vertical tunnelling single electron transistors.

Project description:Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunnelling transistors. We grow graphene quantum dots inside the matrix of hexagonal boron nitride, which allows a dramatic reduction of the number of localised states along the perimeter of the quantum dots. The use of hexagonal boron nitride tunnel barriers as contacts to the graphene quantum dots make our transistors reproducible and not dependent on the localised states, opening even larger flexibility when designing future devices.

| S-EPMC6335417 | biostudies-literature

Large-scale sub-5-nm vertical transistors by van der Waals integration.

Project description:Vertical field effect transistor (VFET), in which the semiconductor is sandwiched between source/drain electrodes and the channel length is simply determined by the semiconductor thickness, has demonstrated promising potential for short channel devices. However, despite extensive efforts over the past decade, scalable methods to fabricate ultra-short channel VFETs remain challenging. Here, we demonstrate a layer-by-layer transfer process of large-scale indium gallium zinc oxide (IGZO) semiconductor arrays and metal electrodes, and realize large-scale VFETs with ultra-short channel length and high device performance. Within this process, the oxide semiconductor could be pre-deposited on a sacrificial wafer, and then physically released and sandwiched between metals, maintaining the intrinsic properties of ultra-scaled vertical channel. Based on this lamination process, we realize 2 inch-scale VFETs with channel length down to 4 nm, on-current over 800 A/cm2, and highest on-off ratio up to 2 × 105, which is over two orders of magnitude higher compared to control samples without laminating process. Our study not only represents the optimization of VFETs performance and scalability at the same time, but also offers a method of transfer large-scale oxide arrays, providing interesting implication for ultra-thin vertical devices.

| S-EPMC11372168 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data