Browse
Submit Data
Databases
API
Help

Dataset Information

33 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Towards Perfect Ultra-Broadband Absorbers, Ultra-Narrow Waveguides, and Ultra-Small Cavities at Optical Frequencies.

ABSTRACT: In this study, we design ultra-broadband optical absorbers, ultra-narrow optical waveguides, and ultra-small optical cavities comprising two-dimensional metallic photonic crystals that tolerate fabrication imperfections such as position and radius disorderings. The absorbers containing gold rods show an absorption amplitude of more than 90% under 54% position disordering at 200<λ<530 nm. The absorbers containing silver rods show an absorptance of more than 90% under 54% position disordering at 200<λ<400 nm. B-type straight waveguides that contain four rows of silver rods exposed to air reveal normalized transmittances of 75% and 76% under 32% position and 60% radius disorderings, respectively. B-type L-shaped waveguides containing four rows of silver rods show 76% and 90% normalized transmittances under 32% position and 40% radius disorderings, respectively. B-type cavities containing two rings of silver rods reveal 70% and 80% normalized quality factors under 32% position and 60% radius disorderings, respectively.

SUBMITTER: Goudarzi K

PROVIDER: S-EPMC9268687 | biostudies-literature |

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

All-Silicon Ultra-Broadband Infrared Light Absorbers.

Project description:Absorbing infrared radiation efficiently is important for critical applications such as thermal imaging and infrared spectroscopy. Common infrared absorbing materials are not standard in Si VLSI technology. We demonstrate ultra-broadband mid-infrared absorbers based purely on silicon. Broadband absorption is achieved by the combined effects of free carrier absorption, and vibrational and plasmonic absorption resonances. The absorbers, consisting of periodically arranged silicon gratings, can be fabricated using standard optical lithography and deep reactive ion etching techniques, allowing for cost-effective and wafer-scale fabrication of micro-structures. Absorption wavebands in excess of 15 micrometers (5-20??m) are demonstrated with more than 90% average absorptivity. The structures also exhibit broadband absorption performance even at large angles of incidence (??=?50°), and independent of polarization.

| S-EPMC5141492 | biostudies-literature

Ultra-broadband metamaterial absorbers from long to very long infrared regime.

Project description:Broadband metamaterials absorbers with high absorption, ultrathin thickness and easy configurations are in great demand for many potential applications. In this paper, we first analyse the coupling resonances in a Ti/Ge/Ti three-layer absorber, which can realise broadband absorption from 8 to 12 μm. Then we experimentally demonstrate two types of absorbers based on the Ti/Ge/Si3N4/Ti configuration. By taking advantage of coupling surface plasmon resonances and intrinsic absorption of lossy material Si3N4, the average absorptions of two types of absorbers achieve almost 95% from 8 to 14 μm (experiment result: 78% from 6.5 to 13.5 μm). In order to expand the absorption bandwidth, we further propose two Ti/Si/SiO2/Ti absorbers which can absorb 92% and 87% of ultra-broadband light in the 14-30 μm and 8-30 μm spectral range, respectively. Our findings establish general and systematic strategies for guiding the design of metamaterial absorbers with excellent broadband absorption and pave the way for enhancing the optical performance in applications of infrared thermal emitters, imaging and photodetectors.

| S-EPMC8257711 | biostudies-literature

Ultra-broadband, lithography-free, omnidirectional, and polarization-insensitive perfect absorber.

Project description:Perfect absorbers (PAs) at near infrared allow various applications such as biosensors, nonlinear optics, color filters, thermal emitters and so on. These PAs, enabled by plasmonic resonance, are typically powerful and compact, but confront inherent challenges of narrow bandwidth, polarization dependence, and limited incident angles as well as requires using expensive lithographic process, which limit their practical applications and mass production. In this work, we demonstrate a non-resonant PA that is comprised of six continuous layers of magnesium fluoride (MgF2) and chromium (Cr) in turns. Our device absorbs more than 90% of light in a broad range of 900-1900 nm. In addition, such a planar design is lithography-free, certainly independent with polarization, and presents a further advantage of wide incidence up to 70°. The measured performance of our optimized PA agrees well with analytical calculations of transfer matrix method (TMM) and numerical simulations of finite element method, and can be readily implemented for practical applications.

| S-EPMC7933432 | biostudies-literature

Ultra-broadband all-optical sampling of optical waveforms.

Project description:Optical-field sampling techniques provide direct access to the electric field of visible and near-infrared light. The existing methods achieve the necessary bandwidth using highly nonlinear light-matter interaction that involves ionization of atoms or generation of charge carriers in solids. We demonstrate an alternative, all-optical approach for measuring electric fields of broadband laser pulses, which offers an advantage in terms of sensitivity and signal-to-noise ratio and extends the detection bandwidth of optical methods to the petahertzdomain.

| S-EPMC9770938 | biostudies-literature

Catenary Electromagnetics for Ultra-Broadband Lightweight Absorbers and Large-Scale Flat Antennas.

Project description:Catenary functions are exciting and fundamental building blocks in constructing various kinds of waves in subwavelength structures. Here, a simple yet powerful approach inspired by catenary optics is proposed to realize efficient manipulation of electromagnetic waves in terms of both amplitude and phase. By properly engineering the catenary electromagnetic fields and frequency dispersion, lightweight metafilm-based broadband absorbers with polarization-independent bandwidth covering 0.65-6.2 GHz are experimentally achieved, and the bandwidth is further broadened to 0.9-40 GHz. With the same approach, a large-scale flat antenna based on generalized reflection is demonstrated in the satellite communication system. To enable the batch manufacturing, a flexible substrate-based microfabrication process is developed with a minimum feature size of down to sub-micrometer and total size up to almost 1 m. These results may provide important guidance for the design of metasurface-based devices.

| S-EPMC6446607 | biostudies-literature

One-reactor vacuum and plasma synthesis of transparent conducting oxide nanotubes and nanotrees: from single wire conductivity to ultra-broadband perfect absorbers in the NIR.

Project description:The eventual exploitation of one-dimensional nanomaterials needs the development of scalable, high yield, homogeneous and environmentally friendly methods capable of meeting the requirements for fabrication of functional nanomaterials with properties on demand. In this article, we demonstrate a vacuum and plasma one-reactor approach for the synthesis of fundamental common elements in solar energy and optoelectronics, i.e. the transparent conducting electrode but in the form of nanotube and nanotree architectures. Although the process is generic and can be used for a variety of TCOs and wide-bandgap semiconductors, we focus herein on indium doped tin oxide (ITO) as the most previously researched in previous applications. This protocol combines widely applied deposition techniques such as thermal evaporation for the formation of organic nanowires serving as 1D and 3D soft templates, deposition of polycrystalline layers by magnetron sputtering, and removal of the templates by simply annealing under mild vacuum conditions. The process variables are tuned to control the stoichiometry, morphology, and alignment of the ITO nanotubes and nanotrees. Four-probe characterization reveals the improved lateral connectivity of the ITO nanotrees and applied on individual nanotubes shows resistivities as low as 3.5 ± 0.9 × 10-4Ω cm, a value comparable to that of single-crystalline counterparts. The assessment of diffuse reflectance and transmittance in the UV-Vis range confirms the viability of the supported ITO nanotubes as random optical media working as strong scattering layers. Their further ability to form ITO nanotrees opens a path for practical applications as ultra-broadband absorbers in the NIR. The demonstrated low resistivity and optical properties of these ITO nanostructures open a way for their use in LEDs, IR shields, energy harvesting, nanosensors, and photoelectrochemical applications.

| S-EPMC8374677 | biostudies-literature

Broadband microwave coding metamaterial absorbers.

Project description:In this paper, a broadband metamaterial microwave absorber is designed, simulated and measured. Differently from the traditional method which is only based on unit cell boundary conditions, we carried out full-wave finite integration simulations using full-sized configurations. Starting from an elementary unit cell structure, four kinds of coding metamaterial blocks, 2 × 2, 3 × 3, 4 × 4 and 6 × 6 blocks were optimized and then used as building blocks (meta-block) for the construction of numerous 12 × 12 topologies with a realistic size scale. We found the broadband absorption response in the frequency range 16 GHz to 33 GHz, in good agreement with the equivalent medium theory prediction and experimental observation. Considering various applications of metamaterials or metamaterial absorbers in the electromagnetic wave processing, including the radars or satellite communications, requires the frequency in the range up to 40 GHz. Our study could be useful to guide experimental work. Furthermore, compared to the straightforward approach that represents the metamaterials configurations as 12 × 12 matrices of random binary bits (0 and 1), our new approach achieves significant gains in the broadband absorption. Our method also may be applied to the full-sized structures with arbitrary dimensions, and thus provide a useful tool in the design of metamaterials with specific desired frequency ranges.

| S-EPMC7000747 | biostudies-literature

Q-factor and wavelength adjustable ultra-perfect absorption under critical coupling through epsilon-near-zero-based absorbers.

Project description:Perfect absorption with adjustable Q factor and wavelength is essential in both theory and application. To address this issue, a structure composed of an epsilon-near-zero (ENZ)- SiO2 grating and a multilayer dielectric structure was designed. In the structure, the intrinsic loss is related to the ENZ thickness, while the external leakage depends on the grating parameters. By adjusting the ENZ film thickness, the intrinsic loss rate was tuned to match the external leakage rate corresponding to different grating parameters, realizing the critical couplings with different Q factors and wavelengths. Under critical coupling, the absorption rate reached a maximum of 99.999%, demonstrating ultra-perfect absorption. The Q factor was adjusted from 4350 to 35800, and the absorption wavelength was modified from 1050 to 1282 nm. The design work may provide new ideas for developing wavelength- and Q-selective absorbers, optical modulators, dielectric sensors, and photodetectors.

| S-EPMC11319591 | biostudies-literature

Broadband polarization-independent perfect absorber using a phase-change metamaterial at visible frequencies.

Project description:We report a broadband polarization-independent perfect absorber with wide-angle near unity absorbance in the visible regime. Our structure is composed of an array of thin Au squares separated from a continuous Au film by a phase change material (Ge2Sb2Te5) layer. It shows that the near perfect absorbance is flat and broad over a wide-angle incidence up to 80° for either transverse electric or magnetic polarization due to a high imaginary part of the dielectric permittivity of Ge2Sb2Te5. The electric field, magnetic field and current distributions in the absorber are investigated to explain the physical origin of the absorbance. Moreover, we carried out numerical simulations to investigate the temporal variation of temperature in the Ge2Sb2Te5 layer and to show that the temperature of amorphous Ge2Sb2Te5 can be raised from room temperature to > 433 K (amorphous-to-crystalline phase transition temperature) in just 0.37 ns with a low light intensity of 95 nW/μm(2), owing to the enhanced broadband light absorbance through strong plasmonic resonances in the absorber. The proposed phase-change metamaterial provides a simple way to realize a broadband perfect absorber in the visible and near-infrared (NIR) regions and is important for a number of applications including thermally controlled photonic devices, solar energy conversion and optical data storage.

| S-EPMC3912474 | biostudies-other

Ultra-high on-chip optical gain in erbium-based hybrid slot waveguides.

Project description:Efficient and reliable on-chip optical amplifiers and light sources would enable versatile integration of various active functionalities on the silicon platform. Although lasing on silicon has been demonstrated with semiconductors by using methods such as wafer bonding or molecular beam epitaxy, cost-effective mass production methods for CMOS-compatible active devices are still lacking. Here, we report ultra-high on-chip optical gain in erbium-based hybrid slot waveguides with a monolithic, CMOS-compatible and scalable atomic-layer deposition process. The unique layer-by-layer nature of atomic-layer deposition enables atomic scale engineering of the gain layer properties and straightforward integration with silicon integrated waveguides. We demonstrate up to 20.1 ± 7.31 dB/cm and at least 52.4 ± 13.8 dB/cm net modal and material gain per unit length, respectively, the highest performance achieved from erbium-based planar waveguides integrated on silicon. Our results show significant advances towards efficient on-chip amplification, opening a route to large-scale integration of various active functionalities on silicon.

| S-EPMC6347631 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data