Cluster-type analogue memristor by engineering redox dynamics for high-performance neuromorphic computing.
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ABSTRACT:
SUBMITTER: Kang J
PROVIDER: S-EPMC9279478 | biostudies-literature |
REPOSITORIES: biostudies-literature
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Project description:Neuromorphic computing, a computing paradigm inspired by the human brain, enables energy-efficient and fast artificial neural networks. To process information, neuromorphic computing directly mimics the operation of biological neurons in a human brain. To effectively imitate biological neurons with electrical devices, memristor-based artificial neurons attract attention because of their simple structure, energy efficiency, and excellent scalability. However, memristor's non-reliability issues have been one of the main obstacles for the development of memristor-based artificial neurons and neuromorphic computings. Here, we show a memristor 1R cross-bar array without transistor devices for individual memristor access with low variation, 100% yield, large dynamic range, and fast speed for artificial neuron and neuromorphic computing. Based on the developed memristor, we experimentally demonstrate a memristor-based neuron with leaky-integrate and fire property with excellent reliability. Furthermore, we develop a neuro-memristive computing system based on the short-term memory effect of the developed memristor for efficient processing of sequential data. Our neuro-memristive computing system successfully trains and generates bio-medical sequential data (antimicrobial peptides) while using a small number of training parameters. Our results open up the possibility of memristor-based artificial neurons and neuromorphic computing systems, which are essential for energy-efficient edge computing devices.
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Project description:The development of brain-inspired neuromorphic computing, including artificial intelligence (AI) and machine learning, is of considerable importance because of the rapid growth in hardware and software capacities, which allows for the efficient handling of big data. Devices for neuromorphic computing must satisfy basic requirements such as multilevel states, high operating speeds, low energy consumption, and sufficient endurance, retention and linearity. In this study, inorganic perovskite-type amorphous strontium vanadate (a-SrVOx: a-SVO) synthesized at room temperature is utilized to produce a high-performance memristor that demonstrates nonvolatile multilevel resistive switching and synaptic characteristics. Analysis of the electrical characteristics indicates that the a-SVO memristor illustrates typical bipolar resistive switching behavior. Multilevel resistance states are also observed in the off-to-on and on-to-off transition processes. The retention resistance of the a-SVO memristor is shown to not significantly change for a period of 2 × 104 s. The conduction mechanism operating within the Ag/a-SVO/Pt memristor is ascribed to the formation of Ag-based filaments. Nonlinear neural network simulations are also conducted to evaluate the synaptic behavior. These results demonstrate that a-SVO-based memristors hold great promise for use in high-performance neuromorphic computing devices.
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Project description:We report on hybrid memristor devices consisting of germanium dioxide nanoparticles (GeO2 NP) embedded within a poly(methyl methacrylate) (PMMA) thin film. Besides exhibiting forming-free resistive switching and an uncommon "ON" state in pristine conditions, the hybrid (nanocomposite) devices demonstrate a unique form of mixed-mode switching. The observed stopping voltage-dependent switching enables state-of-the-art bifunctional synaptic behavior with short-term (volatile/temporal) and long-term (nonvolatile/nontemporal) modes that are switchable depending on the stopping voltage applied. The short-term memory mode device is demonstrated to further emulate important synaptic functions such as short-term potentiation (STP), short-term depression (STD), paired-pulse facilitation (PPF), post-tetanic potentiation (PTP), spike-voltage-dependent plasticity (SVDP), spike-duration-dependent plasticity (SDDP), and, more importantly, the "learning-forgetting-rehearsal" behavior. The long-term memory mode gives additional long-term potentiation (LTP) and long-term depression (LTD) characteristics for long-term plasticity applications. The work shows a unique coexistence of the two resistive switching modes, providing greater flexibility in device design for future adaptive and reconfigurable neuromorphic computing systems at the hardware level.
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Project description:The development of devices that can modulate their conductance under the application of electrical stimuli constitutes a fundamental step towards the realization of synaptic connectivity in neural networks. Optimization of synaptic functionality requires the understanding of the analogue conductance update under different programming conditions. Moreover, properties of physical devices such as bounded conductance values and state-dependent modulation should be considered as they affect storage capacity and performance of the network. This work provides a study of the conductance dynamics produced by identical pulses as a function of the programming parameters in an HfO2 memristive device. The application of a phenomenological model that considers a soft approach to the conductance boundaries allows the identification of different operation regimes and to quantify conductance modulation in the analogue region. Device non-linear switching kinetics is recognized as the physical origin of the transition between different dynamics and motivates the crucial trade-off between degree of analog modulation and memory window. Different kinetics for the processes of conductance increase and decrease account for device programming asymmetry. The identification of programming trade-off together with an evaluation of device variations provide a guideline for the optimization of the analogue programming in view of hardware implementation of neural networks.
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Project description:Inspired by the human brain, the spike-based neuromorphic system has attracted strong research enthusiasm because of the high energy efficiency and powerful computational capability, in which the spiking neurons and plastic synapses are two fundamental building blocks. Recently, two-terminal threshold switching (TS) devices have been regarded as promising candidates for building spiking neurons in hardware. However, how circuit parameters affect the spiking behavior of TS-based neurons is still an open question. Here, based on a leaky integrate-and-fire (LIF) neuron circuit, we systematically study the effect of both the extrinsic and intrinsic factors of NbO x -based TS neurons on their spiking behaviors. The extrinsic influence factors contain input intensities, connected synaptic weights, and parallel capacitances. To illustrate the effect of intrinsic factors, including the threshold voltage, holding voltage, and high/low resistance states of NbO x devices, we propose an empirical model of the fabricated NbO x devices, fitting well with the experimental results. The results indicate that with enhancing the input intensity, the spiking frequency increases first then decreases after reaching a peak value. Except for the connected synaptic weights, all other parameters can modulate the spiking peak frequency under high enough input intensity. Also, the relationship between energy consumption per spike and frequency of the neuron cell is further studied, leading guidance to design neuron circuits in a system to obtain the lowest energy consumption. At last, to demonstrate the practical applications of TS-based neurons, we construct a spiking neural network (SNN) to control the cart-pole using reinforcement learning, obtaining a reward score up to 450. This work provides valuable guidance on building compact LIF neurons based on TS devices and further bolsters the construction of high-efficiency neuromorphic systems.
| S-EPMC8766734 | biostudies-literature
Project description:We demonstrate a lithium (Li) imbued TiOx iontronic device that exhibits synapse-like short-term plasticity behavior without requiring a forming process beforehand or a compliance current during switching. A solid-state electrolyte lithium phosphorus oxynitride (LiPON) behaves as the ion source, and the embedding and releasing of Li ions inside the cathodic like TiOx renders volatile conductance responses from the device and offers a natural platform for hardware simulating neuron functionalities. Besides, these devices possess high uniformity and great endurance as no conductive filaments are present. Different short-term pulse-based phenomena, including paired pulse facilitation, post-tetanic potentiation, and spike rate-dependent plasticity, were observed with self-relaxation characteristics. Based on the voltage excitation period, the time scale of the volatile memory can be tuned. Temperature measurement reveals the ion displacement-induced conductance channels become frozen below 220 K. In addition, the volatile analog devices can be configured into nonvolatile memory units with multibit storage capabilities after an electroforming process. Therefore, on the same platform, we can configure volatile units as nonlinear dynamic reservoirs for performing neuromorphic training and the nonvolatile units as the weight storage layer. We proceed to use voice recognition as an example with the tunable time constant relationship and obtain 94.4% accuracy with a minimal training data set. Thus, this iontronic platform can effectively process and update temporal information for reservoir and neuromorphic computing paradigms.
| S-EPMC11342358 | biostudies-literature
Project description:For neuromorphic computing and high-density data storage memory, memristive devices have recently gained a lot of interest. So far, memristive devices have suffered from switching parameter instability, such as distortions in resistance values of low- and high-resistance states (LRSs and HRSs), dispersion in working voltage (set and reset voltages), and a small ratio of high and low resistance, among other issues. In this context, interface engineering is a critical technique for addressing the variation issues that obstruct the use of memristive devices. Herein, we engineered a high band gap, low Gibbs free energy Al2O3 interlayer between the HfO2 switching layer and the tantalum oxy-nitride electrode (TaN) bottom electrode to operate as an oxygen reservoir, increasing the resistance ratio between HRS and LRS and enabling multilayer data storage. The Pt/HfO2/Al2O3/TaN memristive device demonstrates analog bipolar resistive switching behavior with a potential ratio of HRS and LRS of > 105 and the ability to store multi-level data with consistent retention and uniformity. On set and reset voltages, statistical analysis is used; the mean values (µ) of set and reset voltages are determined to be - 2.7 V and + 1.9 V, respectively. There is a repeatable durability over DC 1000 cycles, 105 AC cycles, and a retention time of 104 s at room temperature. Quantum conductance was obtained by increasing the reset voltage with step of 0.005 V with delay time of 0.1 s. Memristive device has also displayed synaptic properties like as potentiation/depression and paired-pulse facilitation (PPF). Results show that engineering of interlayer is an effective approach to improve the uniformity, ratio of high and low resistance, and multiple conductance quantization states and paves the way for research into neuromorphic synapses.
| S-EPMC9232664 | biostudies-literature
Project description:Solution-based memristors are emergent devices, due to their potential in electrical performance for neuromorphic computing combined with simple and cheap fabrication processes. However, to achieve practical application in crossbar design tens to hundreds of uniform memristors are required. Regarding this, the production step optimization should be considered as the main objective to achieve high performance devices. In this work, solution-based indium gallium zinc oxide (IGZO) memristor devices are produced using a combustion synthesis process. The performance of the device is optimized by using different annealing temperatures and active layer thicknesses to reach a higher reproducibility and stability. All IGZO memristors show a low operating voltage, good endurance, and retention up to 105 s under air conditions. The optimized devices can be programmed in a multi-level cell operation mode, with 8 different resistive states. Also, preliminary results reveal synaptic behavior by replicating the plasticity of a synaptic junction through potentiation and depression; this is a significant step towards low-cost processes and large-scale compatibility of neuromorphic computing systems.
| S-EPMC9241358 | biostudies-literature
Project description:Neuromorphic systems consisting of artificial neurons and synapses can process complex information with high efficiency to overcome the bottleneck of von Neumann architecture. Artificial neurons are essentially required to possess functions such as leaky integrate-and-fire and output spike. However, previous reported artificial neurons typically have high operation voltage and large leakage current, leading to significant power consumption, which is contrary to the energy-efficient biological model. Here, an oscillatory neuron based on Ag filamentary threshold switching memristor (TS) that has a low operation voltage (<0.6 V) with ultralow power consumption (<1.8 µW) is presented. It can trigger neuronal functions, including leaky integrate-and-fire and threshold-driven spiking output, with high endurance (>108 cycles). Being connected to an external resistor or a resistive switching memristor (RS) as synaptic weight, the TS clearly demonstrates self-oscillation behavior once the input pulse voltage exceeds the threshold voltage. Meanwhile, the oscillation frequency is proportional to the input pulse voltage and the conductance of RS synapse, which can be used to integrate the weighted sum current. As an energy-efficient memristor-based spiking neural network, this combination of TS oscillatory neuron with RS synapse is further evaluated for image recognition achieving an accuracy of 79.2 ± 2.4% for CIFAR-10 subset.
| S-EPMC6827597 | biostudies-literature
Project description:Artificial vision is crucial for most artificial intelligence applications. Conventional artificial visual systems have been facing challenges in terms of real-time information processing due to the physical separation of sensors, memories, and processors, which results in the production of a large amount of redundant data as well as the data conversion and transfer between these three components consuming most of the time and energy. Emergent optoelectronic memristors with the ability to realize integrated sensing-computing-memory (ISCM) are key candidates for solving such challenges and therefore attract increasing attention. At present, the memristive ISCM devices can only perform primary-level computing with external light signals due to the fact that only monotonic increase of memconductance upon light irradiation is achieved in most of these devices. Here, we propose an all-optically controlled memristive ISCM device based on a simple structure of Au/ZnO/Pt with the ZnO thin film sputtered at pure Ar atmosphere. This device can perform advanced computing tasks such as nonvolatile neuromorphic computing and complete Boolean logic functions only by light irradiation, owing to its ability to reversibly tune the memconductance with light. Moreover, the device shows excellent operation stability ascribed to a purely electronic memconductance tuning mechanism. Hence, this study is an important step towards the next generation of artificial visual systems.
| S-EPMC11197590 | biostudies-literature