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Improvement in hole transporting ability and device performance of quantum dot light emitting diodes.

ABSTRACT: In this research, we demonstrate a novel approach to improve the device performance of quantum dot light emitting diodes (QLEDs) by blending an additive BYK-P105 with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) as the hole transport layer. In addition, for the first time, polyethylenimine ethoxylated (PEIE)-modified zinc oxide nanoparticles (ZnO NPs) as the electron transport layer were applied in regular-type QLEDs for achieving high device efficiency. A very high brightness of 139 909 cd m^-2 and current efficiency of 27.2 cd A^-1 were obtained for the optimized device with the configuration of ITO/PEDOT:PSS + BYK-P105/PVK/CdSe QDs/ZnO NPs/PEIE/LiF/Al that shows promising use in light-emitting applications.

SUBMITTER: Chiu PC

PROVIDER: S-EPMC9419759 | biostudies-literature | 2020 Jan

REPOSITORIES: biostudies-literature

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Improvement in hole transporting ability and device performance of quantum dot light emitting diodes.

Chiu Pei-Chieh PC Yang Sheng-Hsiung SH

Nanoscale advances 20191121 1

In this research, we demonstrate a novel approach to improve the device performance of quantum dot light emitting diodes (QLEDs) by blending an additive BYK-P105 with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) as the hole transport layer. In addition, for the first time, polyethylenimine ethoxylated (PEIE)-modified zinc oxide nanoparticles (ZnO NPs) as the electron transport layer were applied in regular-type QLEDs for achieving high device efficiency. A very high brightn ...[more]

PMID: 36133973

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