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Nanocrystalline ZnSnN₂ Prepared by Reactive Sputtering, Its Schottky Diodes and Heterojunction Solar Cells.

ABSTRACT: ZnSnN₂ has potential applications in photocatalysis and photovoltaics. However, the difficulty in preparing nondegenerate ZnSnN₂ hinders its device application. Here, the preparation of low-electron-density nanocrystalline ZnSnN₂ and its device application are demonstrated. Nanocrystalline ZnSnN₂ was prepared with reactive sputtering. Nanocrystalline ZnSnN₂ with an electron density of approximately 10¹⁷ cm^-3 can be obtained after annealing at 300 °C. Nanocrystalline ZnSnN₂ is found to form Schottky contact with Ag. Both the current I vs. voltage V curves and the capacitance C vs. voltage V curves of these samples follow the related theories of crystalline semiconductors due to the limited long-range order provided by the crystallites with sizes of 2-10 nm. The I-V curves together with the nonlinear C^-2-V curves imply that there are interface states at the Ag-nanocrystalline ZnSnN₂ interface. The application of nanocrystalline ZnSnN₂ to heterojunction solar cells is also demonstrated.

SUBMITTER: Ye F

PROVIDER: S-EPMC9823707 | biostudies-literature | 2022 Dec

REPOSITORIES: biostudies-literature

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Nanocrystalline ZnSnN2 Prepared by Reactive Sputtering, Its Schottky Diodes and Heterojunction Solar Cells.

Ye Fan F Hong Rui-Tuo RT Qiu Yi-Bin YB Xie Yi-Zhu YZ Zhang Dong-Ping DP Fan Ping P Cai Xing-Min XM

Nanomaterials (Basel, Switzerland) 20221230 1

ZnSnN2 has potential applications in photocatalysis and photovoltaics. However, the difficulty in preparing nondegenerate ZnSnN2 hinders its device application. Here, the preparation of low-electron-density nanocrystalline ZnSnN2 and its device application are demonstrated. Nanocrystalline ZnSnN2 was prepared with reactive sputtering. Nanocrystalline ZnSnN2 with an electron density of approximately 1017 cm-3 can be obta ...[more]

PMID: 36616088

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Project description:Silicon heterojunction (SHJ) solar cells, as one of the most promising passivated contact solar cell technologies of the next generation, have the advantages of high conversion efficiency, high open-circuit voltage, low-temperature coefficient, and no potential-induced degradation. For the single-side rear-emitter SHJ solar cells, the n-type carrier selective layer, which serves as the light-incident side, plays a pivotal role in determining the performance of heterojunction devices. Consequently, a superior n-doped layer should exhibit high optical transmittance and minimal optical absorption, along with a substantial effective doping level to guarantee the formation of dark conductivity (σd) and electron-transport capacity. In this work, we investigated the optical and electrical properties of different n-type monolayers and stacked gradient multilayers, including monolayer, bilayer, and trilayer Si-based thin films, acting as electron-transport layers (ETL) prepared by plasma-enhanced chemical vapor deposition, and studied the influences of these above layers on the performance of SHJ solar cells. The experimental results demonstrate that the ETL with an n-nc-Si:H/n-nc-SiOx:H/n+-nc-Si:H trilayer structure exhibits the potential to boost highly efficient solar cells. The bottom highly crystallized, lightly phosphorus-doped n-nc-Si:H film promotes rapid nucleation of the intermediate n-nc-SiOx:H film and thus reduces the thickness of the incubation layer, as well as improves the passivation contact. The n-nc-SiOx:H film in the middle layer provides excellent optical properties and reduces parasitic absorption, thereby increasing the short-circuit current density. Furthermore, the highly doped n+-nc-Si:H at the top offers an optimal ohmic contact with the reactive plasma deposition-grown TCO layer, which ultimately enhances the fill factor. Ultimately, a conversion efficiency of 20.41%, with an open-circuit voltage of 720 mV, a short-circuit current density of 39.34 mA/cm2, and a filling factor of 72.05%, was achieved in the SHJ solar cell using a typical trilayer structure. This kind of trilayer structure has a particular significance for potential industrialized applications as it allows for efficient utilization of solar energy.

Dataset Information

Nanocrystalline ZnSnN₂ Prepared by Reactive Sputtering, Its Schottky Diodes and Heterojunction Solar Cells.

Publications

Nanocrystalline ZnSnN<sub>2</sub> Prepared by Reactive Sputtering, Its Schottky Diodes and Heterojunction Solar Cells.

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