Dataset Information

Carrier transport and photoconductivity properties of BN₅₀/NiO₅₀ nanocomposite films.

ABSTRACT: BN₅₀/NiO₅₀ and Au-loaded BN₅₀/NiO₅₀ nanocomposite films were separately fabricated on the glass substrates for carrier transport and photoconductivity properties. X-ray diffraction pattern of the films show the hexagonal structure of BN and presence of defect states by Nelson Riley factor analysis. Morphological images show spherical shaped particles with highly porous structure. The incorporation of NiO may hindered growth of BN layers and resulted in spherical particles. Temperature-dependent conductivity describes semiconductor transport behaviour for deposited nanocomposite films. Thermal activation conduction with low activation energy (∼0.308 eV) may be responsible for the resulting conductivity. Further, the light intensity dependent photoelectrical properties of BN₅₀/NiO₅₀ and Au-loaded BN₅₀/NiO₅₀ nanocomposites have been explored. The effect of Au nanoparticles loading on enhanced photo-conductivities (∼22% increase) than bare nanocomposite film has been elaborated by proposed mechanism. This study provided the insightful information for carrier transport and photoconductivity of BN-based nanocomposites.

SUBMITTER: Kaur M

PROVIDER: S-EPMC9982041 | biostudies-literature | 2023 Mar

REPOSITORIES: biostudies-literature

ACCESS DATA

Publications

Carrier transport and photoconductivity properties of BN50/NiO50 nanocomposite films.

Kaur Manjot M Singh Kulwinder K Sharma Ram K RK Sharma Nandni N Thakur Anup A Kumar Akshay A

Heliyon 20230218 3

BN50/NiO50 and Au-loaded BN50/NiO50 nanocomposite films were separately fabricated on the glass substrates for carrier transport and photoconductivity properties. X-ray diffraction pattern of the films show the hexagonal structure of BN and presence of defect states by Nelson Riley factor analysis. Morphological images show spherical shaped particles with highly porous structure. The incorporation of NiO may hindered growth of BN layers and resulted in ...[more]

PMID: 36873537

Similar Datasets

Project description:Fenestration elements that enable spectrally selective dynamic modulation of the near-infrared region of the electromagnetic spectrum are of great interest as a means of decreasing the energy consumption of buildings by adjusting solar heat gain in response to external temperature. The binary vanadium oxide VO2 exhibits a near-room-temperature insulator-metal electronic transition accompanied by a dramatic modulation of the near-infrared transmittance. The low-temperature insulating phase is infrared transparent but blocks infrared transmission upon metallization. There is considerable interest in harnessing the thermochromic modulation afforded by VO2 in nanocomposite thin films. However, to prepare a viable thermochromic film, the visible-light transmittance must be maintained as high as possible while maximizing thermochromic modulation in the near-infrared region of the electromagnetic spectrum, which necessitates the development of high-crystalline-quality VO2 nanocrystals of the optimal particle size embedded within the appropriate host matrix and refractive index matched to the host medium. Here, we demonstrate the preparation of acrylate-based nanocomposite thin films with varying sizes of embedded VO2 nanoparticles. The observed strong size dependence of visible-light transmittance and near-infrared modulation is explicable on the basis of optical simulations. In this article, we elucidate multiple scattering and absorption mechanisms, including Mie scattering, temperature-/phase-variant refractive-index mismatch between VO2 nanocrystals and the encapsulating matrix, and the appearance of a surface plasmon resonance using temperature-variant absorptance and diffuse transmittance spectroscopy measurements performed as a function of particle loading for the different sizes of VO2 nanocrystals. Nanocrystals with dimensions of 44 ± 30 nm show up to >32% near-infrared energy modulation across the near-infrared region of the electromagnetic spectrum while maintaining high visible-light transmission. The results presented here, providing mechanistic elucidation of the size dependence of the different scattering mechanisms, underscore the importance of nanocrystallite dimensions, refractive-index matching, and individualized dispersion of particles within the host matrix for the preparation of viable thermochromic thin films mitigating Mie scattering and differential refractive-index scattering.

Project description:Electrical transport parameters for active layers in silicon (Si) wafer solar cells are determined from free carrier optical absorption using non-contacting optical Hall effect measurements. Majority carrier transport parameters [carrier concentration (N), mobility (μ), and conductivity effective mass (m*)] are determined for both the n-type emitter and p-type bulk wafer Si of an industrially produced aluminum back surface field (Al-BSF) photovoltaic device. From measurements under 0 and ±1.48 T external magnetic fields and nominally "dark" conditions, the following respective [n, p]-type Si parameters are obtained: N = [(3.6 ± 0.1) × 1018 cm-3, (7.6 ± 0.1) × 1015 cm-3]; μ = [166 ± 6 cm2/Vs, 532 ± 12 cm2/Vs]; and m* = [(0.28 ± 0.03) × me, (0.36 ± 0.02) × me]. All values are within expectations for this device design. Contributions from photogenerated carriers in both regions of the p-n junction are obtained from measurements of the solar cell under "light" 1 sun illumination (AM1.5 solar irradiance spectrum). From analysis of combined dark and light optical Hall effect measurements, photogenerated minority carrier transport parameters [minority carrier concentration (Δp or Δn) and minority carrier mobility (μh or μe)] under 1 sun illumination for both n- and p-type Si components of the solar cell are determined. Photogenerated minority carrier concentrations are [(7.8 ± 0.2) × 1016 cm-3, (2.2 ± 0.2) × 1014 cm-3], and minority carrier mobilities are [331 ± 191 cm2/Vs, 766 ± 331 cm2/Vs], for the [n, p]-type Si, respectively, values that are within expectations from literature. Using the dark majority carrier concentration and the effective equilibrium minority carrier concentration under 1 sun illumination, minority carrier effective lifetime and diffusion length are calculated in the n-type emitter and p-type wafer Si with the results also being consistent with literature. Solar cell device performance parameters including photovoltaic device efficiency, open circuit voltage, fill factor, and short circuit current density are also calculated from these transport parameters obtained via optical Hall effect using the diode equation and PC1D solar cell simulations. The calculated device performance parameters are found to be consistent with direct current-voltage measurement demonstrating the validity of this technique for electrical transport property measurements of the semiconducting layers in complete Si solar cells. To the best of our knowledge, this is the first method that enables determination of both minority and majority carrier transport parameters in both active layers of the p-n junction in a complete solar cell.

Project description:In photovoltaic devices, more effective transfer of dissociated electrons and holes from the active layer to the respective electrodes will result in higher fill factors and short-circuit current densities and, thus, enhanced power conversion efficiencies (PCEs). Planar perovskite photovoltaics feature an active layer that can provide a large exciton diffusion length, reaching several micrometers, but require efficient carrier transport layers for charge extraction. In this study, we employed two nanocomposite carrier transfer layers-an electron transport layer (ETL) comprising [6,6]phenyl-C61-butyric acid methyl ester (PC61BM) doped with the small molecule 4,7-diphenyl-1,10-phenanthroline (Bphen), to enhance the electron mobility, and a hole transfer layer (HTL) comprising poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) doped with molybdenum disulfide (MoS2) nanosheets, to enhance the hole mobility. We used ultraviolet photoelectron spectroscopy to determine the energy levels of these composite ETLs and HTLs; atomic force microscopy and scanning electron microscopy to probe their surface structures; and transmission electron microscopy and synchrotron grazing-incidence small-angle X-ray scattering to decipher the structures of the ETLs. Adding a small amount (less than 1%) of Bphen allowed us to tune the energy levels of the ETL and decrease the size of the PC61BM clusters and, therefore, generate more PC61BM aggregation domains to provide more pathways for electron transport, leading to enhanced PCEs of the resulting perovskite devices. We used quantitative pump-probe data to resolve the carrier dynamics from the perovskite to the ETL and HTL, and observed a smaller possibility of carrier recombination and a shorter injection lifetime in the perovskite solar cell doubly modified with carrier transport layers, resulting in an enhancement of the PCE. The PCE reached 16% for a planar inverted perovskite device featuring an ETL incorporating 0.5 wt% Bphen within PC61BM and 0.1 wt% MoS2 within PEDOT:PSS; this PCE is more than 50% higher than the value of 10.2% for the corresponding control device.

Dataset Information

Carrier transport and photoconductivity properties of BN₅₀/NiO₅₀ nanocomposite films.

Publications

Carrier transport and photoconductivity properties of BN<sub>50</sub>/NiO<sub>50</sub> nanocomposite films.

Similar Datasets

OmicsDI is part of the ELIXIR infrastructure

Tweets