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Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si.

ABSTRACT: In-plane directional control of surface chemistry during interface formation can lead to new opportunities regarding device structures and applications. Control of this type requires techniques that can probe and hence provide feedback on the chemical reactivity of bonds not only in specific directions but also in real time. Here, we demonstrate both control and measurement of the oxidation of H-terminated (111) Si. Control is achieved by externally applying uniaxial strain, and measurement by second-harmonic generation (SHG) together with the anisotropic-bond model of nonlinear optics. In this system anisotropy results because bonds in the strain direction oxidize faster than those perpendicular to it, leading in addition to transient structural changes that can also be detected at the bond level by SHG.

SUBMITTER: Gokce B

PROVIDER: S-EPMC2955082 | biostudies-other | 2010 Oct

REPOSITORIES: biostudies-other

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Measurement and control of in-plane surface chemistry during the oxidation of H-terminated (111) Si.

Gokce Bilal B Adles Eric J EJ Aspnes David E DE Gundogdu Kenan K

Proceedings of the National Academy of Sciences of the United States of America 20100927 41

In-plane directional control of surface chemistry during interface formation can lead to new opportunities regarding device structures and applications. Control of this type requires techniques that can probe and hence provide feedback on the chemical reactivity of bonds not only in specific directions but also in real time. Here, we demonstrate both control and measurement of the oxidation of H-terminated (111) Si. Control is achieved by externally applying uniaxial strain, and measurement by s ...[more]

PMID: 20876145

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