Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Nanoscale effects on heterojunction electron gases in GaN/AlGaN core/shell nanowires.

ABSTRACT: The electronic properties of heterojunction electron gases formed in GaN/AlGaN core/shell nanowires with hexagonal and triangular cross sections are studied theoretically. We show that at nanoscale dimensions, the nonpolar hexagonal system exhibits degenerate quasi-one-dimensional electron gases at the hexagon corners, which transition to a core-centered electron gas at lower doping. In contrast, polar triangular core/shell nanowires show either a nondegenerate electron gas on the polar face or a single quasi-one-dimensional electron gas at the corner opposite the polar face, depending on the termination of the polar face. More generally, our results indicate that electron gases in closed nanoscale systems are qualitatively different from their bulk counterparts.

SUBMITTER: Wong BM

PROVIDER: S-EPMC3176631 | biostudies-other | 2011 Aug

REPOSITORIES: biostudies-other

ACCESS DATA

Json Xml

Similar Datasets

Electron Tomography of Pencil-Shaped GaN/(In,Ga)N Core-Shell Nanowires.

Project description:The three-dimensional structure of GaN/(In,Ga)N core-shell nanowires with multi-faceted pencil-shaped apex is analyzed by electron tomography using high-angle annular dark-field mode in a scanning transmission electron microscope. Selective area growth on GaN-on-sapphire templates using a patterned mask is performed by molecular beam epitaxy to obtain ordered arrays of uniform nanowires. Our results of the tomographic reconstruction allow the detailed determination of the complex morphology of the inner (In,Ga)N multi-faceted shell structure and its deviation from the perfect hexagonal symmetry. The tomogram unambiguously identifies a dot-in-a-wire configuration at the nanowire apex including the exact shape and size, as well as the spatial distribution of its chemical composition.

| S-EPMC6626086 | biostudies-other

Photodetecting properties of single CuO-ZnO core-shell nanowires with p-n radial heterojunction.

Project description:CuO-ZnO core-shell radial heterojunction nanowire arrays were obtained by a simple route which implies two cost-effective methods: thermal oxidation in air for preparing CuO nanowire arrays, acting as a p-type core and RF magnetron sputtering for coating the surface of the CuO nanowires with a ZnO thin film, acting as a n-type shell. The morphological, structural, optical and compositional properties of the CuO-ZnO core-shell nanowire arrays were investigated. In order to analyse the electrical and photoelectrical properties of the metal oxide nanowires, single CuO and CuO-ZnO core-shell nanowires were contacted by employing electron beam lithography (EBL) and focused ion beam induced deposition (FIBID). The photoelectrical properties emphasize that the p-n radial heterojunction diodes based on single CuO-ZnO core-shell nanowires behave as photodetectors, evidencing a time-depending photoresponse under illumination at 520 nm and 405 nm wavelengths. The performance of the photodetector device was evaluated by assessing its key parameters: responsivity, external quantum efficiency and detectivity. The results highlighted that the obtained CuO-ZnO core-shell nanowires are emerging as potential building blocks for a next generation of photodetector devices.

| S-EPMC7596234 | biostudies-literature

Correlation between Electrical Transport and Nanoscale Strain in InAs/In0.6Ga0.4As Core-Shell Nanowires.

Project description:Free-standing semiconductor nanowires constitute an ideal material system for the direct manipulation of electrical and optical properties by strain engineering. In this study, we present a direct quantitative correlation between electrical conductivity and nanoscale lattice strain of individual InAs nanowires passivated with a thin epitaxial In0.6Ga0.4As shell. With an in situ electron microscopy electromechanical testing technique, we show that the piezoresistive response of the nanowires is greatly enhanced compared to bulk InAs, and that uniaxial elastic strain leads to increased conductivity, which can be explained by a strain-induced reduction in the band gap. In addition, we observe inhomogeneity in strain distribution, which could have a reverse effect on the conductivity by increasing the scattering of charge carriers. These results provide a direct correlation of nanoscale mechanical strain and electrical transport properties in free-standing nanostructures.

| S-EPMC6166997 | biostudies-literature

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.

Project description:Single crystal semiconductor nanomembranes (NM) are important in various applications such as heterogeneous integration and flexible devices. This paper reports the fabrication of AlGaN/GaN NMs and NM high electron mobility transistors (HEMT). Electrochemical etching is used to slice off single-crystalline AlGaN/GaN layers while preserving their microstructural quality. A double heterostructure design with a symmetric strain profile is employed to ensure minimal residual strain in freestanding NMs after release. The mobility of the two-dimensional electron gas (2DEG), formed by the AlGaN/GaN heterostructure, is noticeably superior to previously reported values of many other NMs. AlGaN/GaN nanomembrane HEMTs are fabricated on SiO2 and flexible polymeric substrates. Excellent electrical characteristics, including a high ON/OFF ratio and transconductance, suggest that III-Nitrides nanomembranes are capable of supporting high performance applications.

| S-EPMC5527108 | biostudies-literature

Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization.

Project description:The effects of near-surface processing on the properties of AlGaN/GaN heterostructures were studied, combining conventional electrical characterization on high-electron mobility transistors (HEMTs), with advanced characterization techniques with nanometer scale resolution, i.e., transmission electron microscopy, atomic force microscopy (AFM) and conductive atomic force microscopy (C-AFM). In particular, a CHF3-based plasma process in the gate region resulted in a shift of the threshold voltage in HEMT devices towards less negative values. Two-dimensional current maps acquired by C-AFM on the sample surface allowed us to monitor the local electrical modifications induced by the plasma fluorine incorporated in the material.The results are compared with a recently introduced gate control processing: the local rapid thermal oxidation process of the AlGaN layer. By this process, a controlled thin oxide layer on surface of AlGaN can be reliably introduced while the resistance of the layer below increase locally.

| S-EPMC3211179 | biostudies-literature

AlGaN/GaN high electron mobility transistors for protein-peptide binding affinity study.

Project description:Antibody-immobilized AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect a short peptide consisting of 20 amino acids. One-binding-site model and two-binding-site model were used for the analysis of the electrical signals, revealing the number of binding sites on an antibody and the dissociation constants between the antibody and the short peptide. In the binding-site models, the surface coverage ratio of the short peptide on the sensor surface is relevant to the electrical signals resulted from the peptide-antibody binding on the HEMTs. Two binding sites on an antibody were observed and two dissociation constants, 4.404×10(-11) M and 1.596×10(-9) M, were extracted from the binding-site model through the analysis of the surface coverage ratio of the short peptide on the sensor surface. We have also shown that the conventional method to extract the dissociation constant from the linear regression of curve-fitting with Langmuir isotherm equation may lead to an incorrect information if the receptor has more than one binding site for the ligand. The limit of detection (LOD) of the sensor observed in the experimental result (~10 pM of the short peptide) is very close to the LOD (around 2.7-3.4 pM) predicted from the value of the smallest dissociation constants. The sensitivity of the sensor is not only dependent on the transistors, but also highly relies on the affinity of the ligand-receptor pair. The results demonstrate that the AlGaN/GaN HEMTs cannot only be used for biosensors, but also for the biological affinity study.

| S-EPMC7157921 | biostudies-literature

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction.

Project description:An AlGaN/GaN Schottky barrier diode (SBD) with double-heterojunction is theoretically and experimentally investigated on the GaN/AlGaN/GaN/Si-sub. The two-dimensional hole gas (2DHG) and electron gas (2DEG) are formed at the GaN-top/AlGaN and AlGaN/GaN interface, respectively. At the off-state, the 2DEH and 2DHG are partially depleted and then completely disappear. There remain the fixed positive and negative polarization charges, forming the polarization junction. Therefore, a flat electric field in the drift region and a high breakdown voltage (BV) are obtained. Moreover, the anode is recessed to reduce turn-on voltage (VON). The low-damage ICP etching process results in the improved Schottky contacts, and a low leakgae current and a low VON is obtained. The fabricated SBD exhibits a BV of 1109?V with anode-to-cathode distance (LAC) of 11??m. The fabricated SBDs achieve a low VON of 0.68?V with good uniformity, a high on/off current ratio ? 1010 at room temperature, a low specific on-resistance (RON,SP) of 1.17 m? cm2, and a high Baliga's figure-of-merit (FOM) of 1051?MW/cm2.

| S-EPMC7364695 | biostudies-literature

Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact.

Project description:Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN diode and a MOS contact, we make use of this dual nature and show a direct path to capture the energy band diagram of the nitride system. We then apply transparency calculations to describe the forward conduction regime of a III-N heterojunction diode and demonstrate it realizes a tunnel diode, in contrast to its regular Schottky Barrier Diode designation. Thermionic emission is ruled out and instead, a coherent electron tunneling scenario allows to account for transport at room temperature and higher.

| S-EPMC5557989 | biostudies-literature

Enhanced spin-orbit coupling in core/shell nanowires.

Project description:The spin-orbit coupling (SOC) in semiconductors is strongly influenced by structural asymmetries, as prominently observed in bulk crystal structures that lack inversion symmetry. Here we study an additional effect on the SOC: the asymmetry induced by the large interface area between a nanowire core and its surrounding shell. Our experiments on purely wurtzite GaAs/AlGaAs core/shell nanowires demonstrate optical spin injection into a single free-standing nanowire and determine the effective electron g-factor of the hexagonal GaAs wurtzite phase. The spin relaxation is highly anisotropic in time-resolved micro-photoluminescence measurements on single nanowires, showing a significant increase of spin relaxation in external magnetic fields. This behaviour is counterintuitive compared with bulk wurtzite crystals. We present a model for the observed electron spin dynamics highlighting the dominant role of the interface-induced SOC in these core/shell nanowires. This enhanced SOC may represent an interesting tuning parameter for the implementation of spin-orbitronic concepts in semiconductor-based structures.

| S-EPMC4980452 | biostudies-literature

Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications.

Project description:AlGaN/GaN high electron mobility transistors (HEMTs) were used to measure electrical characteristics of physisorbed gold nanoparticles (Au NPs) functionalized with alkanethiols with a terminal methyl, amine, or carboxyl functional group. Additional alkanethiol was physisorbed onto the NP treated devices to distinguish between the effects of the Au NPs and alkanethiols on HEMT operation. Scanning Kelvin probe microscopy and electrical measurements were used to characterize the treatment effects. The HEMTs were operated near threshold voltage due to the greatest sensitivity in this region. The Au NP/HEMT system electrically detected functional group differences on adsorbed NPs which is pertinent to biosensor applications.

| S-EPMC3592857 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data