Room temperature ballistic transport in InSb quantum well nanodevices.
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ABSTRACT: We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10(6) A/cm(2). This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.
SUBMITTER: Gilbertson AM
PROVIDER: S-EPMC3261050 | biostudies-other | 2011 Dec
REPOSITORIES: biostudies-other
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