Unknown

Dataset Information

0

Room temperature ballistic transport in InSb quantum well nanodevices.


ABSTRACT: We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10(6) A/cm(2). This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.

SUBMITTER: Gilbertson AM 

PROVIDER: S-EPMC3261050 | biostudies-other | 2011 Dec

REPOSITORIES: biostudies-other

Similar Datasets

| S-EPMC5553093 | biostudies-literature
| S-EPMC8433169 | biostudies-literature
| S-EPMC6987185 | biostudies-literature
| S-EPMC6904740 | biostudies-literature
| S-EPMC6811644 | biostudies-literature
| S-EPMC10655127 | biostudies-literature
| S-EPMC6915722 | biostudies-literature
| S-EPMC6884635 | biostudies-literature
| S-EPMC6106987 | biostudies-literature
| S-EPMC6474768 | biostudies-literature