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Room temperature ballistic transport in InSb quantum well nanodevices.


ABSTRACT: We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10(6) A/cm(2). This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.

SUBMITTER: Gilbertson AM 

PROVIDER: S-EPMC3261050 | biostudies-other | 2011 Dec

REPOSITORIES: biostudies-other

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