Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Linear magnetoresistance in n-type silicon due to doping density fluctuations.

ABSTRACT: We report the observation of a large linear magnetoresistance in the ohmic regime in commonplace commercial n-type silicon wafer with a P dopant density of (1.4±0.1) ×10(15) cm(-3), and report measurements of it in the temperature range 30-200 K. It arises from the deformation of current paths, which causes a part of the Hall field to be detected at the voltage probes. In short, wide samples we found linear magnetoresistance as large as 4707% in an 8 tesla field at 35 K. Sample geometry effects like these are commonplace in commercial Hall sensors. However, we found that the effect persisted in long, thin samples where the macroscopic current flow should be uniform between the voltage probes: we observed a magnetoresistance of 445% under the same conditions as above. We interpret this result as arising due to spatial fluctuations in the donor density, in the spirit of the Herring model.

SUBMITTER: Porter NA

PROVIDER: S-EPMC3413879 | biostudies-other | 2012

REPOSITORIES: biostudies-other

ACCESS DATA

Json Xml

Publications

Linear magnetoresistance in n-type silicon due to doping density fluctuations.

Porter Nicholas A NA Marrows Christopher H CH

Scientific reports 20120808

We report the observation of a large linear magnetoresistance in the ohmic regime in commonplace commercial n-type silicon wafer with a P dopant density of (1.4±0.1) ×10(15) cm(-3), and report measurements of it in the temperature range 30-200 K. It arises from the deformation of current paths, which causes a part of the Hall field to be detected at the voltage probes. In short, wide samples we found linear magnetoresistance as large as 4707% in an 8 tesla field at 35 K. Sample geometry effects ...[more]

PMID: 22876340

Similar Datasets

The space charge limited current and huge linear magnetoresistance in silicon.

Project description:Huge magnetoresistance in space charge regime attracts broad interest on non-equilibrium carrier transport under high electric field. However, the accurate fitting for the current-voltage curves from Ohmic to space charge regime under magnetic fields has not been achieved quantitatively. We conjecture that the localized intensive charge dynamic should be taken into consideration. Here, by introducing a field-dependent dielectric constant, for the first time, we successfully simulate the current-voltage curves of covalent crystal silicon wafers under different magnetic fields (0-1 Tesla). The simulation reveals that the optical phonon, instead of the acoustic phonon, plays a major role for the carriers transport under magnetic fields in space charge regime.

| S-EPMC5768776 | biostudies-literature

Colossal transverse magnetoresistance due to nematic superconducting phase fluctuations in a copper oxide.

Project description:Electronic anisotropy ("nematicity") has been detected in cuprate superconductors by various experimental techniques. Using angle-resolved transverse resistance (ARTR) measurements, a very sensitive and background-free technique that can detect 0.5% anisotropy in transport, we have observed it also in La2-xSrxCuO4 (LSCO) for 0.02 ≤ x ≤ 0.25. A central enigma in LSCO is the rotation of the nematic director (orientation of the largest longitudinal resistance) with temperature; this has not been seen before in any material. Here, we address this puzzle by measuring the angle-resolved transverse magnetoresistance (ARTMR) in LSCO. We report the discovery of colossal transverse magnetoresistance (CTMR)-an order-of-magnitude drop in the transverse resistivity in the magnetic field of 6 T. We show that the apparent rotation of the nematic director is caused by anisotropic superconducting fluctuations, which are not aligned with the normal electron fluid, consistent with coexisting bond-aligned and diagonal nematic orders. We quantify this by modeling the (magneto-)conductivity as a sum of normal (Drude) and paraconducting (Aslamazov-Larkin) channels but extended to contain anisotropic Drude and Cooper-pair effective mass tensors. Strikingly, the anisotropy of Cooper-pair stiffness is much larger than that of the normal electrons. It grows dramatically on the underdoped side, where the fluctuations become quasi-one-dimensional. Our analysis is general rather than model dependent. Still, we discuss some candidate microscopic models, including coupled strongly-correlated ladders where the transverse (interladder) phase stiffness is low compared with the longitudinal intraladder stiffness, as well as the anisotropic superconducting fluctuations expected close to the transition to a pair-density wave state.

| S-EPMC10438889 | biostudies-literature

Ultimate Charge Transport Regimes in Doping-Controlled Graphene Laminates: Phonon-Assisted Processes Revealed by the Linear Magnetoresistance.

Project description:Understanding and controlling the electrical properties of solution-processed 2D materials is key to further printed electronics progress. Here, we demonstrate that the thermolysis of the aromatic intercalants utilized in nanosheet exfoliation for graphene laminates allows for high intrinsic mobility and the simultaneous control of doping type (n- and p-) and concentration over a wide range. We establish that the intraflake mobility is high by observing a linear magnetoresistance of such solution-processed graphene laminates and using it to devolve the interflake tunneling and intralayer magnetotransport. Consequently, we determine the temperature dependencies of the inter- and intralayer characteristics. The intraflake transport appears to be dominated by electron-phonon scattering processes at temperatures T > 20 K, while the interflake transport is governed by phonon-assisted tunneling. In particular, we identify the efficiency of phonon-assisted tunneling as the main limiting factor for electrical conductivity in graphene laminates at room temperature. We also demonstrate a thermoelectric sensitivity of around 50 μV·K-1 in a solution-processed metal-free graphene-based thermocouple.

| S-EPMC11342362 | biostudies-literature

Doping density, not valency, influences catalytic metal-assisted plasma etching of silicon.

Project description:Metal-assisted plasma etching (MAPE) of silicon (Si) is an etching technique driven by the catalytic activity of metals such as gold in fluorine-based plasma environments. In this work, the role of the Si substrate was investigated by examining the effects of the dopant concentration in both n- and p-type Si and the dopant atom type in n-type Si in SF6/O2 mixed gas plasma. At the highest dopant concentrations, both n- and p-type Si initially exhibit inhibition of the MAPE-enhanced etching. As the etch progresses, MAPE initiates, resulting in catalytic etching of the underlying Si at the metal-Si interface. Interestingly, MAPE-enhanced etching increases with decreasing doping concentrations for both n- and p-type Si substrates, distinct from results for the similar but divergent, metal-assisted chemical etching of silicon in liquid. Our findings show that the metal-Si interface remains essential to MAPE, and surface enrichment of the dopant atoms or other surface chemistries and the size of metal nanoparticles play roles in modulating catalytic activity.

| S-EPMC10463556 | biostudies-literature

Anomalous magnetoresistance due to longitudinal spin fluctuations in a J<sub>eff</sub> = 1/2 Mott semiconductor.

Project description:As a hallmark of electronic correlation, spin-charge interplay underlies many emergent phenomena in doped Mott insulators, such as high-temperature superconductivity, whereas the half-filled parent state is usually electronically frozen with an antiferromagnetic order that resists external control. We report on the observation of a positive magnetoresistance that probes the staggered susceptibility of a pseudospin-half square-lattice Mott insulator built as an artificial SrIrO3/SrTiO3 superlattice. Its size is particularly large in the high-temperature insulating paramagnetic phase near the Néel transition. This magnetoresistance originates from a collective charge response to the large longitudinal spin fluctuations under a linear coupling between the external magnetic field and the staggered magnetization enabled by strong spin-orbit interaction. Our results demonstrate a magnetic control of the binding energy of the fluctuating particle-hole pairs in the Slater-Mott crossover regime analogous to the Bardeen-Cooper-Schrieffer-to-Bose-Einstein condensation crossover of ultracold-superfluids.

| S-EPMC6874576 | biostudies-literature

Large and Anisotropic Linear Magnetoresistance in Single Crystals of Black Phosphorus Arising From Mobility Fluctuations.

Project description:Black Phosphorus (BP) is presently attracting immense research interest on the global level due to its high mobility and suitable band gap for potential application in optoelectronics and flexible devices. It was theoretically predicted that BP has a large direction-dependent electrical and magnetotransport anisotropy. Investigations on magnetotransport of BP may therefore provide a new platform for studying the nature of electron transport in layered materials. However, to the best of our knowledge, magnetotransport studies, especially the anisotropic magnetoresistance (MR) effect in layered BP, are rarely reported. Here, we report a large linear MR up to 510% at a magnetic field of 7 Tesla in single crystals of BP. Analysis of the temperature and angle dependence of MR revealed that the large linear MR in our sample originates from mobility fluctuations. Furthermore, we reveal that the large linear MR of layered BP in fact follows a three-dimensional behavior rather than a two-dimensional one. Our results have implications to both the fundamental understanding and magnetoresistive device applications of BP.

| S-EPMC4814878 | biostudies-other

Voltage-Controlled Magnetoresistance in Silicon Nanowire Transistors.

Project description:Magneto-electronic logic is an innovative approach to performing high-efficiency computations. Additionally, the ultra-large scale integration requirement for computation strongly suggests exploiting magnetoresistance effects in non-magnetic semiconductor materials. Here, we demonstrate the magnetoresistance effect in a silicon nanowire field effect transistor (SNWT) fabricated by complementary metal-oxide-semiconductor (CMOS)-compatible technology. Our experimental results show that the sign and the magnitude of the magnetoresistance in SNWTs can be effectively controlled by the drain-source voltage and the gate-source voltage, respectively, playing the role of a multi-terminal tunable magnetoresistance device. Various current models are established and in good agreement with the experimental results that describe the impact of electrical voltage and magnetic field on magnetoresistance, which provides design feasibility for the high-density magneto-electronic circuit. Such findings will further pave the way for nanoscale silicon-based magneto-electronics logic devices and show a possible path beyond the developmental limits of CMOS logic.

| S-EPMC6185961 | biostudies-literature

Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor.

Project description:Linear transverse magnetoresistance is commonly observed in many material systems including semimetals, narrow band-gap semiconductors, multi-layer graphene and topological insulators. It can originate in an inhomogeneous conductor from distortions in the current paths induced by macroscopic spatial fluctuations in the carrier mobility and it has been explained using a phenomenological semiclassical random resistor network model. However, the link between the linear magnetoresistance and the microscopic nature of the electron dynamics remains unknown. Here we demonstrate how the linear magnetoresistance arises from the stochastic behaviour of the electronic cycloidal trajectories around low-mobility islands in high-mobility inhomogeneous conductors and that this process is only weakly affected by the applied electric field strength. Also, we establish a quantitative link between the island morphology and the strength of linear magnetoresistance of relevance for future applications.

| S-EPMC3493639 | biostudies-other

Frequency fluctuations in silicon nanoresonators.

Project description:Frequency stability is key to the performance of nanoresonators. This stability is thought to reach a limit with the resonator's ability to resolve thermally induced vibrations. Although measurements and predictions of resonator stability usually disregard fluctuations in the mechanical frequency response, these fluctuations have recently attracted considerable theoretical interest. However, their existence is very difficult to demonstrate experimentally. Here, through a literature review, we show that all studies of frequency stability report values several orders of magnitude larger than the limit imposed by thermomechanical noise. We studied a monocrystalline silicon nanoresonator at room temperature and found a similar discrepancy. We propose a new method to show that this was due to the presence of frequency fluctuations, of unexpected level. The fluctuations were not due to the instrumentation system, or to any other of the known sources investigated. These results challenge our current understanding of frequency fluctuations and call for a change in practices.

| S-EPMC4892353 | biostudies-literature

Antisymmetric linear magnetoresistance and the planar Hall effect.

Project description:The phenomena of antisymmetric magnetoresistance and the planar Hall effect are deeply entwined with ferromagnetism. The intrinsic magnetization of the ordered state permits these unusual and rarely observed manifestations of Onsager's theorem when time reversal symmetry is broken at zero applied field. Here we study two classes of ferromagnetic materials, rare-earth magnets with high intrinsic coercivity and antiferromagnetic pyrochlores with strongly-pinned ferromagnetic domain walls, which both exhibit antisymmetric magnetoresistive behavior. By mapping out the peculiar angular variation of the antisymmetric galvanomagnetic response with respect to the relative alignments of the magnetization, magnetic field, and electrical current, we experimentally distinguish two distinct underlying microscopic mechanisms: namely, spin-dependent scattering of a Zeeman-shifted Fermi surface and anomalous electron velocities. Our work demonstrates that the anomalous electron velocity physics typically associated with the anomalous Hall effect is prevalent beyond the ρxy(Hz) channel, and should be understood as a part of the general galvanomagnetic behavior.

| S-EPMC6954222 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data