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Automatic release of silicon nanowire arrays with a high integrity for flexible electronic devices.

ABSTRACT: Automatic release and vertical transferring of silicon/silicon oxide nanowire arrays with a high integrity are demonstrated by an Ag-assisted ammonia etching method. By adding a water steaming step between Ag-assisted HF/H2O2 and ammonia etching to form a SiOx protective layer sheathing Si nanowires, we can tune the composition of the nanowires from SiOx (0 ? x ? 2) to Si nanowires. Ag plays a key role to the neat and uniform release of Si/SiOx nanowire arrays from Si wafer in the ammonia etching process. The vertical Si nanowire array device, with both sides having high-quality Ohmic contact, can be transferred to arbitrary substrates, especially on a flexible substrate. The method developed here offers a facile method to realize flexible Si nanowire array functional devices.

SUBMITTER: Wu L

PROVIDER: S-EPMC3909900 | biostudies-other | 2014

REPOSITORIES: biostudies-other

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Automatic release of silicon nanowire arrays with a high integrity for flexible electronic devices.

Wu Luo L Li Shuxin S He Weiwei W Teng Dayong D Wang Ke K Ye Changhui C

Scientific reports 20140203

Automatic release and vertical transferring of silicon/silicon oxide nanowire arrays with a high integrity are demonstrated by an Ag-assisted ammonia etching method. By adding a water steaming step between Ag-assisted HF/H2O2 and ammonia etching to form a SiOx protective layer sheathing Si nanowires, we can tune the composition of the nanowires from SiOx (0 ≤ x ≤ 2) to Si nanowires. Ag plays a key role to the neat and uniform release of Si/SiOx nanowire arrays from Si wafer in the ammonia etchin ...[more]

PMID: 24487460

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