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High-mobility ambipolar ZnO-graphene hybrid thin film transistors.

ABSTRACT: In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 ± 16.9 cm(2)/V·s, and a high on-off ratio of 10(5). The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs.

SUBMITTER: Song W

PROVIDER: S-EPMC3920279 | biostudies-other | 2014

REPOSITORIES: biostudies-other

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High-mobility ambipolar ZnO-graphene hybrid thin film transistors.

Song Wooseok W Kwon Soon Yeol SY Myung Sung S Jung Min Wook MW Kim Seong Jun SJ Min Bok Ki BK Kang Min-A MA Kim Sung Ho SH Lim Jongsun J An Ki-Seok KS

Scientific reports 20140211

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 ± 16.9 cm(2)/V·s, and a high on-off ratio of 10(5). The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed d ...[more]

PMID: 24513629

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