Browse
Submit Data
Databases
API
Help

Dataset Information

22 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Nanomembrane-based materials for Group IV semiconductor quantum electronics.

ABSTRACT: Strained-silicon/relaxed-silicon-germanium alloy (strained-Si/SiGe) heterostructures are the foundation of Group IV-element quantum electronics and quantum computation, but current materials quality limits the reliability and thus the achievable performance of devices. In comparison to conventional approaches, single-crystal SiGe nanomembranes are a promising alternative as substrates for the epitaxial growth of these heterostructures. Because the nanomembrane is truly a single crystal, in contrast to the conventional SiGe substrate made by compositionally grading SiGe grown on bulk Si, significant improvements in quantum electronic-device reliability may be expected with nanomembrane substrates. We compare lateral strain inhomogeneities and the local mosaic structure (crystalline tilt) in strained-Si/SiGe heterostructures that we grow on SiGe nanomembranes and on compositionally graded SiGe substrates, with micro-Raman mapping and nanodiffraction, respectively. Significant structural improvements are found using SiGe nanomembranes.

SUBMITTER: Paskiewicz DM

PROVIDER: S-EPMC3936214 | biostudies-other | 2014

REPOSITORIES: biostudies-other

ACCESS DATA

Json Xml

Similar Datasets

Unveiling Planar Defects in Hexagonal Group IV Materials.

Project description:Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I3 basal stacking fault and investigate its structural and electronic properties. Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present.

| S-EPMC8155321 | biostudies-literature

Metal oxide semiconductor nanomembrane-based soft unnoticeable multifunctional electronics for wearable human-machine interfaces.

Project description:Wearable human-machine interfaces (HMIs) are an important class of devices that enable human and machine interaction and teaming. Recent advances in electronics, materials, and mechanical designs have offered avenues toward wearable HMI devices. However, existing wearable HMI devices are uncomfortable to use and restrict the human body's motion, show slow response times, or are challenging to realize with multiple functions. Here, we report sol-gel-on-polymer-processed indium zinc oxide semiconductor nanomembrane-based ultrathin stretchable electronics with advantages of multifunctionality, simple manufacturing, imperceptible wearing, and robust interfacing. Multifunctional wearable HMI devices range from resistive random-access memory for data storage to field-effect transistors for interfacing and switching circuits, to various sensors for health and body motion sensing, and to microheaters for temperature delivery. The HMI devices can be not only seamlessly worn by humans but also implemented as prosthetic skin for robotics, which offer intelligent feedback, resulting in a closed-loop HMI system.

| S-EPMC6677552 | biostudies-literature

3D continuum phonon model for group-IV 2D materials.

Project description:A general three-dimensional continuum model of phonons in two-dimensional materials is developed. Our first-principles derivation includes full consideration of the lattice anisotropy and flexural modes perpendicular to the layers and can thus be applied to any two-dimensional material. In this paper, we use the model to not only compare the phonon spectra among the group-IV materials but also to study whether these phonons differ from those of a compound material such as molybdenum disulfide. The origin of quadratic modes is clarified. Mode coupling for both graphene and silicene is obtained, contrary to previous works. Our model allows us to predict the existence of confined optical phonon modes for the group-IV materials but not for molybdenum disulfide. A comparison of the long-wavelength modes to density-functional results is included.

| S-EPMC5496570 | biostudies-other

Magnetic Liquid Metal (Fe-EGaIn) Based Multifunctional Electronics for Remote Self-Healing Materials, Degradable Electronics, and Thermal Transfer Printing.

Project description:Flexible materials with the ability to be bent, strained, or twisted play a critical role in soft robots and stretchable electronics. Although tremendous efforts are focused on developing new stretchable materials with excellent stability, inevitable mechanical damage due to long term deformation is still an urgent problem to be tackled. Here, a magnetic healing method based on Fe-doped liquid metal (Fe-GaIn) conductive ink via a noncontact way is proposed. Further, multifunctional flexible electronics are designed with combined performances of superior remote self-healing under magnetic field, water-degradable, and thermal transfer printing, which attribute to three parts of the materials including Fe-GaIn conductive ink, degradable PVA substrate, and adhesive fructose. The as-made light emitting diodes (LED) circuit is demonstrated with both structural and functional repairing after single or multipoint damage. The self-healing time from multipoint damage is pretty fast within 10 s. Due to the water-soluble PVA film, the recycling process is simple via immersing into water. Through heating, the electric circuit on fructose can be transferred to other flexible substrate with high efficiency, which broadens the practical applications of the present system. The novel and multifunctional electronics hold great promise for self-healing electronics, transient electronics, and soft robots.

| S-EPMC6794621 | biostudies-literature

Quantum Mechanical-Based Quantitative Structure-Property Relationships for Electronic Properties of Two Large Classes of Organic Semiconductor Materials: Polycyclic Aromatic Hydrocarbons and Thienoacenes.

Project description:In this study, the degree of the π-orbital overlap (DPO) model proposed earlier for polycyclic aromatic hydrocarbons (PAH) was employed to develop quantitative structure-property relationships (QSPRs) for band gaps, ionization potentials, and electron affinities of thienoacenes. DPO is based on two-dimensional topological draw of aromatic molecules. The B3LYP/6-31+G(d) level of density functional theory (DFT) was used to provide chemical data for developing QSPRs. We found that the DPO model is able to capture the correct physics of electronic properties of aromatic molecules so that with only six nonzero topological parameters (four for PAH and additional two for thienoacenes), the DPO model yields the linear dependence of electronic properties of both the PAH and thienoacenes classes by a single set of QSPRs with the accuracy to within 0.1 eV of the DFT results. The results suggest that within the DPO framework, all aromatic molecules can share the same set of QSPRs.

| S-EPMC6649276 | biostudies-literature

All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics.

Project description:Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Therefore, a suitable bidirectional selector as a two-way switch is required to facilitate a major breakthrough in the 3D crossbar array memory devices. Here, we show the excellent selectivity of all oxide p-/n-type semiconductor-based p-n-p open-based bipolar junction transistors as selectors in crossbar memory array. We report that bidirectional nonlinear characteristics of oxide p-n-p junctions can be highly enhanced by manipulating p-/n-type oxide semiconductor characteristics. We also propose an associated Zener tunneling mechanism that explains the unique features of our p-n-p selector. Our experimental findings are further extended to confirm the profound functionality of oxide p-n-p selectors integrated with several bipolar resistive switching memory elements working as storage nodes.

| S-EPMC4542327 | biostudies-literature

Bright core-shell semiconductor quantum wires.

Project description:Colloidal CdTe quantum wires are reported having ensemble photoluminescence efficiencies as high as 25% under low excitation-power densities. High photoluminescence efficiencies are achieved by formation of a monolayer CdS shell on the CdTe quantum wires. Like other semiconductor nanowires, the CdTe quantum wires may contain frequent wurtzite-zinc-blende structural alternations along their lengths. The present results demonstrate that the optical properties, emission-peak shape and photoluminescence efficiencies, are independent of the presence or absence of such structural alternations.

| S-EPMC3508702 | biostudies-literature

Compound semiconductor nanotube materials grown and fabricated.

Project description:A new GaAs/InGaAs/InGaP compound semiconductor nanotube material structure was designed and fabricated in this work. A thin, InGaAs-strained material layer was designed in the nanotube structure, which can directionally roll up a strained heterostructure through a normal wet etching process. The compound semiconductor nanotube structure was grown by gas-source molecular beam epitaxy. A good crystalline quality of InGaP, InGaAs, and GaAs materials was obtained through optimizing the growth condition. The fabricated GaAs/InGaAs/InGaP semiconductor nanotubes, with a diameter of 300 to 350 nm and a length of 1.8 to 2.0 ?m, were achieved through normal device fabrication.

| S-EPMC3254589 | biostudies-literature

Adiabatic quantum state transfer in a semiconductor quantum-dot spin chain.

Project description:Semiconductor quantum-dot spin qubits are a promising platform for quantum computation, because they are scalable and possess long coherence times. In order to realize this full potential, however, high-fidelity information transfer mechanisms are required for quantum error correction and efficient algorithms. Here, we present evidence of adiabatic quantum-state transfer in a chain of semiconductor quantum-dot electron spins. By adiabatically modifying exchange couplings, we transfer single- and two-spin states between distant electrons in less than 127 ns. We also show that this method can be cascaded for spin-state transfer in long spin chains. Based on simulations, we estimate that the probability to correctly transfer single-spin eigenstates and two-spin singlet states can exceed 0.95 for the experimental parameters studied here. In the future, state and process tomography will be required to verify the transfer of arbitrary single qubit states with a fidelity exceeding the classical bound. Adiabatic quantum-state transfer is robust to noise and pulse-timing errors. This method will be useful for initialization, state distribution, and readout in large spin-qubit arrays for gate-based quantum computing. It also opens up the possibility of universal adiabatic quantum computing in semiconductor quantum-dot spin qubits.

| S-EPMC8042124 | biostudies-literature

Probing the Cytotoxicity Of Semiconductor Quantum Dots.

Project description:With their bright, photostable fluorescence, semiconductor quantum dots show promise as alternatives to organic dyes for biological labeling. Questions about their potential cytotoxicity, however, remain unanswered. While cytotoxicity of bulk cadmium selenide (CdSe) is well documented, a number of groups have suggested that CdSe QDs are cytocompatible, at least with some immortalized cell lines. Using primary hepatocytes as a liver model, we found that CdSe-core QDs were indeed acutely toxic under certain conditions. Specifically, we found that the cytotoxicity of QDs was modulated by processing parameters during synthesis, exposure to ultraviolet light, and surface coatings. Our data further suggests that cytotoxicity correlates with the liberation of free Cd2+ ions due to deterioration of the CdSe lattice. When appropriately coated, CdSe-core QDs can be rendered non-toxic and used to track cell migration and reorganization in vitro. Our results inform design criteria for the use of QDs in vitro and especially in vivo where deterioration over time may occur.

| S-EPMC5588688 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data