Browse
Submit Data
Databases
API
Help

Dataset Information

8 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Self-assembly and horizontal orientation growth of VO2 nanowires.

ABSTRACT: Single-crystalline vanadium dioxide (VO2) nanostructures have attracted an intense research interest recently because of their unique single-domain metal-insulator phase transition property. Synthesis of these nanostructures in the past was limited in density, alignment, or single-crystallinity. The assembly of VO2 nanowires (NWs) is desirable for a "bottom-up" approach to the engineering of intricate structures using nanoscale building blocks. Here, we report the successful synthesis of horizontally aligned VO2 NWs with a dense growth mode in the [1-100]quartz direction of a polished x-cut quartz surface using a simple vapor transport method. Our strategy of controlled growth of VO2 NWs promisingly paves the way for designing novel metal-insulator transition devices based on VO2 NWs.

SUBMITTER: Cheng C

PROVIDER: S-EPMC4071308 | biostudies-other | 2014

REPOSITORIES: biostudies-other

ACCESS DATA

Json Xml

Similar Datasets

Guided Growth of Horizontal p-Type ZnTe Nanowires.

Project description:A major challenge toward large-scale integration of nanowires is the control over their alignment and position. A possible solution to this challenge is the guided growth process, which enables the synthesis of well-aligned horizontal nanowires that grow according to specific epitaxial or graphoepitaxial relations with the substrate. However, the guided growth of horizontal nanowires was demonstrated for a limited number of materials, most of which exhibit unintentional n-type behavior. Here we demonstrate the vapor-liquid-solid growth of guided horizontal ZnTe nanowires and nanowalls displaying p-type behavior on four different planes of sapphire. The growth directions of the nanowires are determined by epitaxial relations between the nanowires and the substrate or by a graphoepitaxial effect that guides their growth along nanogrooves or nanosteps along the surface. We characterized the crystallographic orientations and elemental composition of the nanowires using transmission electron microscopy and photoluminescence. The optoelectronic and electronic properties of the nanowires were studied by fabricating photodetectors and top-gate thin film transistors. These measurements showed that the guided ZnTe nanowires are p-type semiconductors and are photoconductive in the visible range. The guided growth of horizontal p-type nanowires opens up the possibility of parallel nanowire integration into functional systems with a variety of potential applications not available by other means.

| S-EPMC5117751 | biostudies-literature

Hierarchical self-assembly of organic heterostructure nanowires.

Project description:Organic heterostructures (OHSs) integrating the intrinsic heterostructure characters as well as the organic semiconductor properties have attracted intensive attention in material chemistry. However, the precise bottom-up synthesis of OHSs is still challenging owing to the general occurrence of homogeneous-nucleation and the difficult manipulation of noncovalent interactions. Herein, we present the rational synthesis of the longitudinally/horizontally-epitaxial growth of one-dimensional OHSs including triblock and core/shell nanowires with quantitatively-manipulated microstructure via a hierarchical self-assembly method by regulating the noncovalent interactions: hydrogen bond (-15.66 kcal mol-1) > halogen bond (-4.90 kcal mol-1) > π-π interaction (-0.09 kcal mol-1). In the facet-selective epitaxial growth strategy, the lattice-matching and the surface-interface energy balance respectively facilitate the realization of triblock and core/shell heterostructures. This hierarchical self-assembly approach opens up avenues to the fine synthesis of OHSs. We foresee application possibilities in integrated optoelectronics, such as the nanoscale multiple input/out optical logic gate with high-fidelity signal.

| S-EPMC6710268 | biostudies-literature

Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires.

Project description:Reversible and drastic modulation of the transport properties in vanadium dioxide (VO2) nanowires by electric field-induced hydrogenation at room temperature was demonstrated using the nanogaps separated by humid air in field-effect transistors with planer-type gates (PG-FET). These PG-FETs allowed us to investigate behavior of revealed hydrogen intercalation and diffusion aspects with time and spatial evolutions in nanowires. These results show that air nanogaps can operate as an electrochemical reaction field, even in a gaseous atmosphere, and offer new directions to explore emerging functions for electronic and energy devices in oxides.

| S-EPMC4653652 | biostudies-literature

Self-assembly of silicon nanowires studied by advanced transmission electron microscopy.

Project description:Scanning transmission electron microscopy (STEM) was successfully applied to the analysis of silicon nanowires (SiNWs) that were self-assembled during an inductively coupled plasma (ICP) process. The ICP-synthesized SiNWs were found to present a Si-SiO2 core-shell structure and length varying from ≈100 nm to 2-3 μm. The shorter SiNWs (maximum length ≈300 nm) were generally found to possess a nanoparticle at their tip. STEM energy dispersive X-ray (EDX) spectroscopy combined with electron tomography performed on these nanostructures revealed that they contain iron, clearly demonstrating that the short ICP-synthesized SiNWs grew via an iron-catalyzed vapor-liquid-solid (VLS) mechanism within the plasma reactor. Both the STEM tomography and STEM-EDX analysis contributed to gain further insight into the self-assembly process. In the long-term, this approach might be used to optimize the synthesis of VLS-grown SiNWs via ICP as a competitive technique to the well-established bottom-up approaches used for the production of thin SiNWs.

| S-EPMC5331248 | biostudies-literature

Growth mechanism of self-catalyzed group III-V nanowires.

Project description:Group III-V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal-organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, we gain deeper insight into nucleation and growth of self-seeded III-V nanowires. By this mechanism most work available in literature concerning this field can be described.

| S-EPMC3028567 | biostudies-literature

Self-integration of nanowires into circuits via guided growth.

Project description:The ability to assemble discrete nanowires (NWs) with nanoscale precision on a substrate is the key to their integration into circuits and other functional systems. We demonstrate a bottom-up approach for massively parallel deterministic assembly of discrete NWs based on surface-guided horizontal growth from nanopatterned catalyst. The guided growth and the catalyst nanopattern define the direction and length, and the position of each NW, respectively, both with unprecedented precision and yield, without the need for postgrowth assembly. We used these highly ordered NW arrays for the parallel production of hundreds of independently addressable single-NW field-effect transistors, showing up to 85% yield of working devices. Furthermore, we applied this approach for the integration of 14 discrete NWs into an electronic circuit operating as a three-bit address decoder. These results demonstrate the feasibility of massively parallel "self-integration" of NWs into electronic circuits and functional systems based on guided growth.

| S-EPMC3780857 | biostudies-other

Self-Assembly of a Functional Oligo(Aniline)-Based Amphiphile into Helical Conductive Nanowires.

Project description:A tetra(aniline)-based cationic amphiphile, TANI-NHC(O)C5H10N(CH3)3(+)Br(-) (TANI-PTAB) was synthesized, and its emeraldine base (EB) state was found to self-assemble into nanowires in aqueous solution. The observed self-assembly is described by an isodesmic model, as shown by temperature-dependent UV-vis investigations. Linear dichroism (LD) studies, combined with computational modeling using time-dependent density functional theory (TD-DFT), suggests that TANI-PTAB molecules are ordered in an antiparallel arrangement within nanowires, with the long axis of TANI-PTAB arranged perpendicular to the nanowire long axis. Addition of either S- or R- camphorsulfonic acid (CSA) to TANI-PTAB converted TANI to the emeraldine salt (ES), which retained the ability to form nanowires. Acid doping of TANI-PTAB had a profound effect on the nanowire morphology, as the CSA counterions' chirality translated into helical twisting of the nanowires, as observed by circular dichroism (CD). Finally, the electrical conductivity of CSA-doped helical nanowire thin films processed from aqueous solution was 2.7 mS cm(-1). The conductivity, control over self-assembled 1D structure and water-solubility demonstrate these materials' promise as processable and addressable functional materials for molecular electronics, redox-controlled materials and sensing.

| S-EPMC4694622 | biostudies-literature

One-Drop Self-Assembly of Ultra-Fine Second-Order Organic Nonlinear Optical Crystal Nanowires.

Project description:In this study, we propose a one-drop self-assembly method, which proved capable of successfully preparing 4-N, N-dimethylamino-4'-N'-methyl-stilbazolium tosylate (DAST) single-crystalline nanowires (NWs). The apparent roughness of the DAST NWs was determined to be less than 100 pm by using a high-resolution atomic force microscope, indicating their ultrafine quality. The DAST NWs also exhibited excellent nonlinear optical properties, including two-photon excited fluorescence and second harmonic generation, which could enable the production of low-cost, low-power-consumption wideband wavelength conversion devices. Thus, the described method may provide a new avenue for organic NW fabrication.

| S-EPMC6686028 | biostudies-literature

Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory.

Project description:The growth mechanisms of self-catalyzed InAs/InSb axial nanowire heterostructures are thoroughly investigated as a function of the In and Sb line pressures and growth time. Some interesting phenomena are observed and analyzed. In particular, the presence of In droplet on top of InSb segment is shown to be essential for forming axial heterostructures in the self-catalyzed vapor-liquid-solid mode. Axial versus radial growth rates of InSb segment are investigated under different growth conditions and described within a dedicated model containing no free parameters. It is shown that widening of InSb segment with respect to InAs stem is controlled by the vapor-solid growth on the nanowire sidewalls rather than by the droplet swelling. The In droplet can even shrink smaller than the nanowire facet under Sb-rich conditions. These results shed more light on the growth mechanisms of self-catalyzed heterostructures and give clear route for engineering the morphology of InAs/InSb axial nanowire heterostructures for different applications.

| S-EPMC7153585 | biostudies-literature

Silver as Seed-Particle Material for GaAs Nanowires--Dictating Crystal Phase and Growth Direction by Substrate Orientation.

Project description:Here we investigate the feasibility of silver as seed-particle material to synthesize GaAs nanowires and show that both crystal phase and growth direction can be controlled by choice of substrate orientation. A (111)B substrate orientation can be used to form vertically aligned wurtzite GaAs nanowires and a (100) substrate orientation to form vertically aligned zinc blende GaAs nanowires. A 45-50% yield of vertical nanowire growth is achieved on the (100) substrate orientation without employing any type of surface modification or nucleation strategy to promote a vertical growth direction. In addition, photoluminescence measurements reveal that the photon emission from the silver seeded wurtzite GaAs nanowires is characterized by a single and narrow emission peak at 1.52 eV.

| S-EPMC4852989 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data