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InAs/Si Hetero-Junction Nanotube Tunnel Transistors.

ABSTRACT: Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in 'ON' state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10?nm thin nanotube TFET with a 100?nm core gate has a 5×normalized output current compared to a 10?nm diameter GAA NW TFET.

SUBMITTER: Hanna AN

PROVIDER: S-EPMC4413881 | biostudies-other | 2015

REPOSITORIES: biostudies-other

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InAs/Si Hetero-Junction Nanotube Tunnel Transistors.

Hanna Amir N AN Fahad Hossain M HM Hussain Muhammad M MM

Scientific reports 20150429

Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in 'ON' state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling ...[more]

PMID: 25923104

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