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Substantial improvement of perovskite solar cells stability by pinhole-free hole transport layer with doping engineering.

ABSTRACT: We fabricated perovskite solar cells using a triple-layer of n-type doped, intrinsic, and p-type doped 2,2',7,7'-tetrakis(N,N'-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) (n-i-p) as hole transport layer (HTL) by vacuum evaporation. The doping concentration for n-type doped spiro-OMeTAD was optimized to adjust the highest occupied molecular orbital of spiro-OMeTAD to match the valence band maximum of perovskite for efficient hole extraction while maintaining a high open circuit voltage. Time-dependent solar cell performance measurements revealed significantly improved air stability for perovskite solar cells with the n-i-p structured spiro-OMeTAD HTL showing sustained efficiencies even after 840 h of air exposure.

SUBMITTER: Jung MC

PROVIDER: S-EPMC4434888 | biostudies-other | 2015

REPOSITORIES: biostudies-other

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Substantial improvement of perovskite solar cells stability by pinhole-free hole transport layer with doping engineering.

Jung Min-Cherl MC Raga Sonia R SR Ono Luis K LK Qi Yabing Y

Scientific reports 20150518

We fabricated perovskite solar cells using a triple-layer of n-type doped, intrinsic, and p-type doped 2,2',7,7'-tetrakis(N,N'-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) (n-i-p) as hole transport layer (HTL) by vacuum evaporation. The doping concentration for n-type doped spiro-OMeTAD was optimized to adjust the highest occupied molecular orbital of spiro-OMeTAD to match the valence band maximum of perovskite for efficient hole extraction while maintaining a high open circuit v ...[more]

PMID: 25985417

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