Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers.
Ontology highlight
ABSTRACT:
SUBMITTER: Wang K
PROVIDER: S-EPMC4614445 | biostudies-other | 2015
REPOSITORIES: biostudies-other
Similar Datasets
Project description:Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic counterpart of common II-VI semiconductors. Favourable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying zero-field antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the writing magnetic field angle, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states, which we set by heat-assisted magneto-recording and by changing the writing field direction. The multiple stability in our memory is ascribed to different distributions of domains with the Néel vector aligned along one of the three magnetic easy axes. The robustness against strong magnetic field perturbations combined with the multiple stability of the magnetic memory states are unique properties of antiferromagnets.
| S-EPMC4906165 | biostudies-literature
Project description:Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the limits of how large can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit coupling. We selected IrMn as a prime example of first-class moment (Mn) and spin-orbit (Ir) combination. Isothermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been performed. The metal/insulator structure with magnetic coupling between both layers allows the measurement of the modulation of the transport properties exclusively in the antiferromagnetic layer. Anisotropic magnetoresistance as large as 0.15% has been found, which is much larger than that for a bare IrMn layer. Interestingly, it has been observed that anisotropic magnetoresistance is strongly influenced by the field cooling conditions, signaling the dependence of the found response on the formation of domains at the magnetic ordering temperature.
| S-EPMC5071853 | biostudies-other
Project description:Using antiferromagnets as active elements in spintronics requires the ability to manipulate and read-out the Néel vector orientation. Here we demonstrate for Mn2Au, a good conductor with a high ordering temperature suitable for applications, reproducible switching using current pulse generated bulk spin-orbit torques and read-out by magnetoresistance measurements. Reversible and consistent changes of the longitudinal resistance and planar Hall voltage of star-patterned epitaxial Mn2Au(001) thin films were generated by pulse current densities of ≃107 A/cm2. The symmetry of the torques agrees with theoretical predictions and a large read-out magnetoresistance effect of more than ≃6% is reproduced by ab initio transport calculations.
| S-EPMC5783935 | biostudies-literature
Project description:A major issue in the development of spintronic memory devices is the reduction of the power consumption for the magnetization reversal. For this purpose, the artificial control of the magnetic anisotropy of ferromagnetic materials is of great importance. Here, we demonstrate the control of the carrier-energy dependence of the magnetic anisotropy of the density of states (DOS) using the quantum size effect in a single-crystal ferromagnetic material, GaMnAs. We show that the mainly twofold symmetry of the magnetic anisotropy of DOS, which is attributed to the impurity band, is changed to a fourfold symmetry by enhancing the quantum size effect in the valence band of the GaMnAs quantum wells. By combination with the gate electric-field control technique, our concept of the usage of the quantum size effect for the control of the magnetism will pave the way for the ultra-low-power manipulation of magnetization in future spintronic devices.
| S-EPMC5458150 | biostudies-literature
Project description:The magnetic field response of the transport properties of novel materials and then the large magnetoresistance effects are of broad importance in both science and application. We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 10(5)% in 2 K and 9 T field, and 4.3 × 10(6)% in 0.4 K and 32 T field, without saturation) and field-induced metal-semiconductor-like transition, in NbSb2 single crystal. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field which is related to the Dirac-like point, in addition to orbital MR expected for high mobility metals.
| S-EPMC4256591 | biostudies-literature
Project description:The recent discovery of spin current transmission through antiferromagnetic insulating materials opens up vast opportunities for fundamental physics and spintronics applications. The question currently surrounding this topic is: whether and how could THz antiferromagnetic magnons mediate a GHz spin current? This mismatch of frequencies becomes particularly critical for the case of coherent ac spin current, raising the fundamental question of whether a GHz ac spin current can ever keep its coherence inside an antiferromagnetic insulator and so drive the spin precession of another ferromagnet layer coherently? Utilizing element- and time-resolved x-ray pump-probe measurements on Py/Ag/CoO/Ag/Fe75Co25/MgO(001) heterostructures, here we demonstrate that a coherent GHz ac spin current pumped by the Py ferromagnetic resonance can transmit coherently across an antiferromagnetic CoO insulating layer to drive a coherent spin precession of the Fe75Co25 layer. Further measurement results favor thermal magnons rather than evanescent spin waves as the mediator of the coherent ac spin current in CoO.
| S-EPMC6868243 | biostudies-literature
Project description:SrIrO3 , the three-dimensional member of the Ruddlesden-Popper iridates, is a paramagnetic semimetal characterised by a the delicate interplay between spin-orbit coupling and Coulomb repulsion. In this work, we study the anisotropic magnetoresistance (AMR) of SrIrO3 thin films, which is closely linked to spin-orbit coupling and probes correlations between electronic transport, magnetic order and orbital states. We show that the low-temperature negative magnetoresistance is anisotropic with respect to the magnetic field orientation, and its angular dependence reveals the appearance of a fourfold symmetric component above a critical magnetic field. We show that this AMR component is of magnetocrystalline origin, and attribute the observed transition to a field-induced magnetic state in SrIrO3 .
| S-EPMC7411514 | biostudies-literature
Project description:The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in ?'-FeRh-based junctions driven by the magnetic phase transition of ?'-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one ?'-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the ?'-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one ?'-FeRh magnetic electrode.
| S-EPMC5587625 | biostudies-literature
Project description:Magnetometers based on the anisotropic magnetoresistive effect are used in many applications for orientation determination, by measuring the magnetic field of the Earth. As sensors of this type are commercial, off-the-shelf components, manufacturers provide limited information on their measurement performance. Therefore, we present a (to date) unprecedented comprehensive calibration study on three state-of-the-art digital anisotropic magnetoresistance magnetometers, to precisely determine various performance parameters and stability across different sensors of the same model. With the evaluation of sensitivity, noise, offset, and orientation determination, as well as considering dependencies on temperature and frequency, the performance of each sensor can be improved significantly, enabling their implementation in demanding fields of application (such as in satellites). Different measurement and calibration techniques, specifically aimed at the characteristics of the examined magnetometers, were utilized, using a sophisticated magnetic laboratory that has served as a calibration facility for several interplanetary space missions. Our study allows operators to decide whether to consider anisotropic magnetoresitance magnetometers for their application and, more importantly, to be able to (at least partially) skip a time-intensive and complicated calibration by using the sensor parameters given in this paper. To that end, the most promising sensor is recommended. The sensor examination suggests a good comparability of different sensors of the same model, and shows the importance of noise regarding the sensor performance with a noise floor up to 124 nT/Hz at 1 Hz. Additionally, depending on the sensor model, the sensitivity is 14 nT at best, and the attitude determination error can be reduced to about 0.3° with the given calibration.
| S-EPMC6514736 | biostudies-literature
Project description:When a three-dimensional ferromagnetic topological insulator thin film is magnetized out-of-plane, conduction ideally occurs through dissipationless, one-dimensional (1D) chiral states that are characterized by a quantized, zero-field Hall conductance. The recent realization of this phenomenon, the quantum anomalous Hall effect, provides a conceptually new platform for studies of 1D transport, distinct from the traditionally studied quantum Hall effects that arise from Landau level formation. An important question arises in this context: how do these 1D edge states evolve as the magnetization is changed from out-of-plane to in-plane? We examine this question by studying the field-tilt-driven crossover from predominantly edge-state transport to diffusive transport in Crx(Bi,Sb)(2-x)Te3 thin films. This crossover manifests itself in a giant, electrically tunable anisotropic magnetoresistance that we explain by employing a Landauer-Büttiker formalism. Our methodology provides a powerful means of quantifying dissipative effects in temperature and chemical potential regimes far from perfect quantization.
| S-EPMC4507013 | biostudies-literature