Room temperature spin valve effect in NiFe/WS₂/Co junctions.
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ABSTRACT: The two-dimensional (2D) layered electronic materials of transition metal dichalcogenides (TMDCs) have been recently proposed as an emerging canddiate for spintronic applications. Here, we report the exfoliated single layer WS2-intelayer based spin valve effect in NiFe/WS2/Co junction from room temperature to 4.2 K. The ratio of relative magnetoresistance in spin valve effect increases from 0.18% at room temperature to 0.47% at 4.2 K. We observed that the junction resistance decreases monotonically as temperature is lowered. These results revealed that semiconducting WS2 thin film works as a metallic conducting interlayer between NiFe and Co electrodes.
SUBMITTER: Iqbal MZ
PROVIDER: S-EPMC4751526 | biostudies-other | 2016
REPOSITORIES: biostudies-other
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