Unknown

Dataset Information

0

Room temperature spin valve effect in NiFe/WS₂/Co junctions.


ABSTRACT: The two-dimensional (2D) layered electronic materials of transition metal dichalcogenides (TMDCs) have been recently proposed as an emerging canddiate for spintronic applications. Here, we report the exfoliated single layer WS2-intelayer based spin valve effect in NiFe/WS2/Co junction from room temperature to 4.2 K. The ratio of relative magnetoresistance in spin valve effect increases from 0.18% at room temperature to 0.47% at 4.2 K. We observed that the junction resistance decreases monotonically as temperature is lowered. These results revealed that semiconducting WS2 thin film works as a metallic conducting interlayer between NiFe and Co electrodes.

SUBMITTER: Iqbal MZ 

PROVIDER: S-EPMC4751526 | biostudies-other | 2016

REPOSITORIES: biostudies-other

Similar Datasets

| S-EPMC5159805 | biostudies-literature
| S-EPMC4800414 | biostudies-literature
| S-EPMC4928968 | biostudies-literature
| S-EPMC9905071 | biostudies-literature
| S-EPMC4083262 | biostudies-literature
| S-EPMC6856150 | biostudies-literature
| S-EPMC6884635 | biostudies-literature
| S-EPMC3580319 | biostudies-other
| S-EPMC10460417 | biostudies-literature
| S-EPMC8833206 | biostudies-literature