Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor.

ABSTRACT: Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44?mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at -0.5?V showing ultra-low operating voltage with the highest mobility (250.5?cm(2)/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature.

SUBMITTER: Park JH

PROVIDER: S-EPMC4838852 | biostudies-other | 2016 Apr

REPOSITORIES: biostudies-other

ACCESS DATA

Json Xml

Publications

Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor.

Park Jae Hyo JH Jang Gil Su GS Kim Hyung Yoon HY Seok Ki Hwan KH Chae Hee Jae HJ Lee Sol Kyu SK Joo Seung Ki SK

Scientific reports 20160421

Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at -0.5 V showing ultra-low ...[more]

PMID: 27098115

Similar Datasets

ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior.

Project description:Here we report the ZrOx-based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V VGS range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrOx/TaN capacitors is proposed to be originated from the oxygen vacancy dipoles. The NC effect of the amorphous HfO2 and ZrOx films devices can be proved by the sudden drop of gate leakage, the negative differential resistance (NDR) phenomenon, the enhancement of IDS and sub-60 subthreshold swing. 5 nm ZrOx-based NCFETs achieve a clockwise hysteresis of 0.24 V, lower than 60 mV/decade SS and an 12% IDS enhancement compared to the control device without ZrOx. The suppressed NC effect of Al2O3/HfO2 NCFET compared with ZrOx NCFET is related to the partial switching of oxygen vacancy dipoles in the forward sweeping due to negative interfacial dipoles at the Al2O3/HfO2 interface.

| S-EPMC7855158 | biostudies-literature

A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance.

Project description:Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage properties of the zinc-tin oxide (ZTO) TFTs with the combined ZAO dielectrics by using the proposed metal-insulator-semiconductor (MIS) structure model. The capacitance evolution of the semiconductor from the TFT model structure described well the threshold voltage shift observed in the ZTO TFT with the ZAO (1:2) gate dielectric. The electrical properties of the ZTO TFT with a ZAO (1:2) gate dielectric showed low voltage driving with a field effect mobility of 37.01 cm(2)/Vs, a threshold voltage of 2.00 V, an on-to-off current ratio of 1.46 × 10(5), and a subthreshold slope of 0.10 V/dec.

| S-EPMC5027534 | biostudies-literature

?-Ga2O3 Nanomembrane Negative Capacitance Field-Effect Transistors with Steep Subthreshold Slope for Wide Band Gap Logic Applications.

Project description:Steep-slope ?-Ga2O3 nanomembrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in the gate dielectric stack. Subthreshold slope less than 60 mV/dec at room temperature is obtained for both forward and reverse gate-voltage sweeps with a minimum value of 34.3 mV/dec at the reverse gate-voltage sweep and 53.1 mV/dec at the forward gate-voltage sweep at V DS = 0.5 V. Enhancement-mode operation with a threshold voltage of ?0.4 V is achieved by tuning the thickness of the ?-Ga2O3 membrane. Low hysteresis of less than 0.1 V is obtained. The steep-slope, low hysteresis, and enhancement-mode ?-Ga2O3 NC-FETs are promising as an nFET candidate for future wide band gap complementary metal-oxide-semiconductor logic applications.

| S-EPMC6645059 | biostudies-literature

Subthreshold Conduction of Disordered ZnO-Based Thin-Film Transistors.

Project description:This study presents the disorderedness effects on the subthreshold characteristics of atomically deposited ZnO thin-film transistors (TFTs). Bottom-gate ZnO TFTs show n-type enhancement-mode transfer characteristics but a gate-voltage-dependent, degradable subthreshold swing. The charge-transport characteristics of the disordered semiconductor TFTs are severely affected by the localized trap states. Thus, we posit that the disorderedness factors, which are the interface trap capacitance and the diffusion coefficient of electrons, would result in the degradation. Considering the factors as gate-dependent power laws, we derive the subthreshold current-voltage relationship for disordered semiconductors. Notably, the gate-dependent disorderedness parameters are successfully deduced and consistent with those obtained by the gm/Ids method, which was for the FinFETs. In addition, temperature-dependent current-voltage analyses reveal that the gate-dependent interface traps limit the subthreshold conduction, leading to the diffusion current. Thus, we conclude that the disorderedness factors of the ZnO films lead to the indefinable subthreshold swing of the ZnO TFTs.

| S-EPMC10456918 | biostudies-literature

Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors.

Project description:The parallel-plate capacitor equation is widely used in contemporary material research for nanoscale applications and nanoelectronics. To apply this equation, flat and smooth electrodes are assumed for a capacitor. This essential assumption is often violated for thin-film capacitors because the formation of nanoscale roughness at the electrode interface is very probable for thin films grown via common deposition methods. In this work, we experimentally and theoretically show that the electrical capacitance of thin-film capacitors with realistic interface roughness is significantly larger than the value predicted by the parallel-plate capacitor equation. The degree of the deviation depends on the strength of the roughness, which is described by three roughness parameters for a self-affine fractal surface. By applying an extended parallel-plate capacitor equation that includes the roughness parameters of the electrode, we are able to calculate the excess capacitance of the electrode with weak roughness. Moreover, we introduce the roughness parameter limits for which the simple parallel-plate capacitor equation is sufficiently accurate for capacitors with one rough electrode. Our results imply that the interface roughness beyond the proposed limits cannot be dismissed unless the independence of the capacitance from the interface roughness is experimentally demonstrated. The practical protocols suggested in our work for the reliable use of the parallel-plate capacitor equation can be applied as general guidelines in various fields of interest.

| S-EPMC5569667 | biostudies-literature

Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor.

Project description:High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole mobility of greater than 10 cm2/V·s, even for SnO TFTs with a unique single-hole band and a small hole effective mass. In this paper, we demonstrate a high-performance GeSn pTFT with a high field-effect hole mobility (μFE), of 41.8 cm2/V·s; a sharp turn-on subthreshold slope (SS), of 311 mV/dec, for low-voltage operation; and a large on-current/off-current (ION/IOFF) value, of 8.9 × 106. This remarkably high ION/IOFF is achieved using an ultra-thin nanosheet GeSn, with a thickness of only 7 nm. Although an even higher hole mobility (103.8 cm2/V·s) was obtained with a thicker GeSn channel, the IOFF increased rapidly and the poor ION/IOFF (75) was unsuitable for transistor applications. The high mobility is due to the small hole effective mass of GeSn, which is supported by first-principles electronic structure calculations.

| S-EPMC8777649 | biostudies-literature

Flexible active-matrix organic light-emitting diode display enabled by MoS2 thin-film transistor.

Project description:Atomically thin molybdenum disulfide (MoS2) has been extensively investigated in semiconductor electronics but has not been applied in a backplane circuitry of organic light-emitting diode (OLED) display. Its applicability as an active drive element is hampered by the large contact resistance at the metal/MoS2 interface, which hinders the transport of carriers at the dielectric surface, which in turn considerably deteriorates the mobility. Modified switching device architecture is proposed for efficiently exploiting the high-k dielectric Al2O3 layer, which, when integrated in an active matrix, can drive the ultrathin OLED display even in dynamic folding states. The proposed architecture exhibits 28 times increase in mobility compared to a normal back-gated thin-film transistor, and its potential as a wearable display attached to a human wrist is demonstrated.

| S-EPMC5917918 | biostudies-literature

High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors.

Project description:Oxide semiconductors have been extensively studied as active channel layers of thin-film transistors (TFTs) for electronic applications. However, the field-effect mobility (μFE) of oxide TFTs is not sufficiently high to compete with that of low-temperature-processed polycrystalline-Si TFTs (50-100 cm2V-1s-1). Here, we propose a simple process to obtain high-performance TFTs, namely hydrogenated polycrystalline In2O3 (In2O3:H) TFTs grown via the low-temperature solid-phase crystallization (SPC) process. In2O3:H TFTs fabricated at 300 °C exhibit superior switching properties with µFE = 139.2 cm2V-1s-1, a subthreshold swing of 0.19 Vdec-1, and a threshold voltage of 0.2 V. The hydrogen introduced during sputter deposition plays an important role in enlarging the grain size and decreasing the subgap defects in SPC-prepared In2O3:H. The proposed method does not require any additional expensive equipment and/or change in the conventional oxide TFT fabrication process. We believe these SPC-grown In2O3:H TFTs have a great potential for use in future transparent or flexible electronics applications.

| S-EPMC8885685 | biostudies-literature

Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing.

Project description:We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 μm, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

| S-EPMC3537686 | biostudies-other

Retarded saturation of the areal capacitance using 3D-aligned MnO2 thin film nanostructures as a supercapacitor electrode.

Project description:The supercapacitive properties of manganese oxide (MnO2) thin films electrodeposited on three-dimensionally (3D) aligned inverse-opal nickel nanostructures are investigated. Compared to conventional planar or two-dimensionally (2D) aligned nanostructures, 3D-aligned nanostructures can provide considerably increased and controllable contacts between the electrode and electrolyte. As a result, saturation of the areal capacitance with the electrode thickness and associated decrease of the specific capacitance, C sp , become much slower than those of the planar and 2D-aligned electrode systems. While, for planar MnO2 electrodes, the C sp of a 60-cycle electrodeposited electrode is only the half of the 10-cycle electrodeposited one, the value of the 3D-nanostructured electrode remains unchanged under the same condition. The maximum C sp value of 864 F g-1, and C sp retention of 87.7% after 5000 cycles of galvanostatic charge-discharge are obtained. The voltammetric response is also improved significantly and the C sp measured at 200 mV s-1 retains 71.7% of the value measured at 10 mV s-1. More quantitative analysis on the effect of this 3D-aligned nanostructuring is also performed using a deconvolution of the capacitive elements in the total capacitance of the electrodes.

| S-EPMC5557763 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data