Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire.

ABSTRACT: Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~10(12)?A/m(2). Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed ?-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the ?-shaped stripline can deterministically write a magnetic data bit in 15?ns even with a relatively low current density of 5.34?×?10(11)?A/m(2). Micromagnetic simulations reveal the evolution of the domain nucleation - first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line.

SUBMITTER: Zhang SF 

PROVIDER: S-EPMC4838865 | biostudies-other | 2016 Apr

REPOSITORIES: biostudies-other