Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration.

ABSTRACT: The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs.

SUBMITTER: Cariou R

PROVIDER: S-EPMC4863370 | biostudies-other | 2016

REPOSITORIES: biostudies-other

ACCESS DATA

Json Xml

Similar Datasets

Monolithic integration of room-temperature multifunctional BaTiO3-CoFe2O4 epitaxial heterostructures on Si(001).

Project description:The multifunctional (ferromagnetic and ferroelectric) response at room temperature that is elusive in single phase multiferroic materials can be achieved in a proper combination of ferroelectric perovskites and ferrimagnetic spinel oxides in horizontal heterostructures. In this work, lead-free CoFe2O4/BaTiO3 bilayers are integrated with Si(001) using LaNiO3/CeO2/YSZ as a tri-layer buffer. They present structural and functional properties close to those achieved on perovskite substrates: the bilayers are fully epitaxial with extremely flat surface, and exhibit robust ferromagnetism and ferroelectricity at room temperature.

| S-EPMC4994007 | biostudies-other

Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon.

Project description:Additional functionalities on semiconductor microchips are progressively important in order to keep up with the ever-increasing demand for more powerful computational systems. Monolithic III-V integration on Si promises to merge mature Si CMOS processing technology with III-V semiconductors possessing superior material properties, e. g., in terms of carrier mobility or band structure (direct band gap). In particular, Si photonics would strongly benefit from an integration scheme for active III-V optoelectronic devices in order to enable low-cost and power-efficient electronic-photonic integrated circuits. We report on room-temperature lasing from AlGaAs/GaAs microdisk cavities monolithically integrated on Si(001) using a selective epitaxial growth technique called template-assisted selective epitaxy. The grown gain material possesses high optical quality without indication of threading dislocations, antiphase boundaries, or twin defects. The devices exhibit single-mode lasing at T < 250 K and lasing thresholds between 2 and 18 pJ/pulse depending on the cavity size (1-3 μm in diameter).

| S-EPMC6007962 | biostudies-literature

Heterogeneous integration of epitaxial Ge on Si using AlAs/GaAs buffer architecture: suitability for low-power fin field-effect transistors.

Project description:Germanium-based materials and device architectures have recently appeared as exciting material systems for future low-power nanoscale transistors and photonic devices. Heterogeneous integration of germanium (Ge)-based materials on silicon (Si) using large bandgap buffer architectures could enable the monolithic integration of electronics and photonics. In this paper, we report on the heterogeneous integration of device-quality epitaxial Ge on Si using composite AlAs/GaAs large bandgap buffer, grown by molecular beam epitaxy that is suitable for fabricating low-power fin field-effect transistors required for continuing transistor miniaturization. The superior structural quality of the integrated Ge on Si using AlAs/GaAs was demonstrated using high-resolution x-ray diffraction analysis. High-resolution transmission electron microscopy confirmed relaxed Ge with high crystalline quality and a sharp Ge/AlAs heterointerface. X-ray photoelectron spectroscopy demonstrated a large valence band offset at the Ge/AlAs interface, as compared to Ge/GaAs heterostructure, which is a prerequisite for superior carrier confinement. The temperature-dependent electrical transport properties of the n-type Ge layer demonstrated a Hall mobility of 370 cm(2)/Vs at 290 K and 457 cm(2)/Vs at 90 K, which suggests epitaxial Ge grown on Si using an AlAs/GaAs buffer architecture would be a promising candidate for next-generation high-performance and energy-efficient fin field-effect transistor applications.

| S-EPMC4223664 | biostudies-other

Growth of epitaxial silicon nanowires on a Si substrate by a metal-catalyst-free process.

Project description:The growth of epitaxial Si nanowires by a metal-catalyst-free process has been investigated as an alternative to the more common metal-catalyzed vapor-liquid-solid process. The well-aligned Si nanowires are successfully grown on a (111)-oriented Si substrate without any metal catalysts by a thermal treatment using silicon sulfide as a Si source at approximately 1200 °C. The needle-shaped Si nanowires, which have a core-shell structure that consists of a single-crystalline Si core along the <111> direction consistent with the substrate direction and a surface coating of silicon oxide, are grown by a metal-catalyst-free process. In this process, the silicon sulfide in the liquid phase facilitates the nucleation and nanowire growth. In contrast, oxygen-rich nanowires that consist of crystalline Si at the tip and lumpy silicon oxide on the body are observed in a sample grown at 1300 °C, which disturbs the epitaxial growth of Si nanowires.

| S-EPMC4964331 | biostudies-literature

Photodegradation of Si-doped GaAs nanowire.

Project description:Researching optical effects in nanowires may require a high pump intensity which under ambient conditions can degrade nanowires due to thermal oxidation. In this work we investigated the photodegradation of a single Si-doped GaAs nanowire by laser heating in air. To understand the changes that occurred on the nanowire we carried out Raman spectroscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy, and photoluminescence spectroscopy in laser damaged regions as well as in non-affected ones. From Raman Stokes and anti-Stokes measurements we estimated the local temperature that the oxidation process of the nanowire (NW) surface starts at as 661 K, resulting in two new Raman modes at 200 cm-1 and 259 cm-1. Scanning electron microscopy and energy dispersive X-ray spectroscopy measurements showed a significant loss of arsenic in the oxidized regions, but no erosion of the nanowire. Micro-photoluminescence measurements showed the near-band-edge emission of GaAs along the nanowire, as well as a new emission band at 755 nm corresponding to polycrystalline β-Ga2O3 formation. Our results also indicate that neither amorphous As nor crystalline As were deposited on the surface of the nanowire. Combining different experimental techniques, this study showed the formation of polycrystalline β-Ga2O3 by oxidation of the nanowire surface and the limits for performing spectroscopic investigations on individual GaAs NWs under ambient air conditions.

| S-EPMC9076065 | biostudies-literature

Epitaxial III-V/Si Vertical Heterostructures with Hybrid 2D-Semimetal/Semiconductor Ambipolar and Photoactive Properties.

Project description:Hybrid materials taking advantage of the different physical properties of materials are highly attractive for numerous applications in today's science and technology. Here, it is demonstrated that epitaxial bi-domain III-V/Si are hybrid structures, composed of bulk photo-active semiconductors with 2D topological semi-metallic vertical inclusions, endowed with ambipolar properties. By combining structural, transport, and photoelectrochemical characterizations with first-principle calculations, it is shown that the bi-domain III-V/Si materials are able within the same layer to absorb light efficiently, separate laterally the photo-generated carriers, transfer them to semimetal singularities, and ease extraction of both electrons and holes vertically, leading to efficient carrier collection. Besides, the original topological properties of the 2D semi-metallic inclusions are also discussed. This comb-like heterostructure not only merges the superior optical properties of semiconductors with good transport properties of metallic materials, but also combines the high efficiency and tunability afforded by III-V inorganic bulk materials with the flexible management of nano-scale charge carriers usually offered by blends of organic materials. Physical properties of these novel hybrid heterostructures can be of great interest for energy harvesting, photonic, electronic or computing devices.

| S-EPMC8805590 | biostudies-literature

Transferless Inverted Graphene/Silicon Heterostructures Prepared by Plasma-Enhanced Chemical Vapor Deposition of Amorphous Silicon on CVD Graphene.

Project description:The heterostructures of two-dimensional (2D) and three-dimensional (3D) materials represent one of the focal points of current nanotechnology research and development. From an application perspective, the possibility of a direct integration of active 2D layers with exceptional optoelectronic and mechanical properties into the existing semiconductor manufacturing processes is extremely appealing. However, for this purpose, 2D materials should ideally be grown directly on 3D substrates to avoid the transferring step, which induces damage and contamination of the 2D layer. Alternatively, when such an approach is difficult-as is the case of graphene on noncatalytic substrates such as Si-inverted structures can be created, where the 3D material is deposited onto the 2D substrate. In the present work, we investigated the possibility of using plasma-enhanced chemical vapor deposition (PECVD) to deposit amorphous hydrogenated Si (a-Si:H) onto graphene resting on a catalytic copper foil. The resulting stacks created at different Si deposition temperatures were investigated by the combination of Raman spectroscopy (to quantify the damage and to estimate the change in resistivity of graphene), temperature-dependent dark conductivity, and constant photocurrent measurements (to monitor the changes in the electronic properties of a-Si:H). The results indicate that the optimum is 100 C deposition temperature, where the graphene still retains most of its properties and the a-Si:H layer presents high-quality, device-ready characteristics.

| S-EPMC7153506 | biostudies-literature

Super High-Concentration Si and N Doping of CVD Diamond Film by Thermal Decomposition of Silicon Nitride Substrate.

Project description:The high-concentration N doping of diamond film is still a challenge since nitrogen is limited during diamond growth. In this work, a novel method combined with the thermal decomposition of silicon nitride was proposed to form the activated N and Si components in the reactor gas that surrounded the substrate, with which the high-concentration N and Si doping of diamond film was performed. Meanwhile, graphene oxide (GO) particles were also employed as an adsorbent to further increase the concentration of the N element in diamond film by capturing the more decomposed N components. All the as-deposited diamond films were characterized by scanning electron microscopy, energy dispersive spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. For the pure diamond film with a growth time of 0.5 h, the N and Si concentrations were 20.78 and 41.21 at%, respectively. For the GO-diamond film, they reached 47.47 and 21.66 at%, which set a new record for super high-concentration N doping of diamond film. Hence, thermal decomposition for the substrate can be regarded as a potential and alternative method to deposit the chemical vapor deposition (CVD) diamond film with high-concentration N, which be favorable for the widespread application of diamond in the electric field.

| S-EPMC10488532 | biostudies-literature

Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots.

Project description:Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The spectroscopic fingerprint and quantum optical properties of QDs are significantly influenced by their morphology. The effects of nanohole geometry and infilled material on the exciton binding energies and fine structure splitting are well-understood. However, a comprehensive understanding of GaAs/AlGaAs QD morphology remains elusive. To address this, we employ high-resolution scanning transmission electron microscopy (STEM) and reverse engineering through selective chemical etching and atomic force microscopy (AFM). Cross-sectional STEM of uncapped QDs reveals an inverted conical nanohole with Al-rich sidewalls and defect-free interfaces. Subsequent selective chemical etching and AFM measurements further reveal asymmetries in element distribution. This study enhances the understanding of DENI QD morphology and provides a fundamental three-dimensional structural model for simulating and optimizing their optoelectronic properties.

| S-EPMC11342363 | biostudies-literature

Plasma Enhanced Complete Oxidation of Ultrathin Epitaxial Praseodymia Films on Si(111).

Project description:Praseodymia films have been exposed to oxygen plasma at room temperature after deposition on Si(111) via molecular beam epitaxy. Different parameters as film thickness, exposure time and flux during plasma treatment have been varied to study their influence on the oxygen plasma oxidation process. The surface near regions have been investigated by means of X-ray photoelectron spectroscopy showing that the plasma treatment transforms the stoichiometry of the films from Pr2O3 to PrO2. Closer inspection of the bulk properties of the films by means of synchrotron radiation based X-ray reflectometry and diffraction confirms this transformation if the films are thicker than some critical thickness of 6 nm. The layer distance of these films is extremely small verifying the completeness of the plasma oxidation process. Thinner films, however, cannot be transformed completely. For all films, less oxidized very thin interlayers are detected by these experimental techniques.

| S-EPMC5512919 | biostudies-other

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data