Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

The effect of electric field intensification at interparticle contacts in microwave sintering.

ABSTRACT: The nature of microwave sintering cannot be explained in the past and has been generally called microwave effect. Here we show that the E-field intensification is the reason of microwave fast sintering of solid state inorganic compounds. The intensification degree varied with dielectric constant of compound, distance between two particles, angle between the direction of E-field and the normal to the surface at the adjacent point of two spheres. Ultra-high temperature caused by E-field intensification leads to fusing of solid materials at contact zone and enhances the mass transportation. The key to develop a microwave energy-saved sintering method is to control the distance between particles and uniformity of particles instead of the particle size.

SUBMITTER: Qiao X

PROVIDER: S-EPMC5009377 | biostudies-other | 2016

REPOSITORIES: biostudies-other

ACCESS DATA

Json Xml

Publications

The effect of electric field intensification at interparticle contacts in microwave sintering.

Qiao Xiuchen X Xie Xiaoying X

Scientific reports 20160902

The nature of microwave sintering cannot be explained in the past and has been generally called microwave effect. Here we show that the E-field intensification is the reason of microwave fast sintering of solid state inorganic compounds. The intensification degree varied with dielectric constant of compound, distance between two particles, angle between the direction of E-field and the normal to the surface at the adjacent point of two spheres. Ultra-high temperature caused by E-field intensific ...[more]

PMID: 27586521

Similar Datasets

The Effect of Reactive Electric Field-Assisted Sintering of MoS2/Bi2Te3 Heterostructure on the Phase Integrity of Bi2Te3 Matrix and the Thermoelectric Properties.

Project description:In this work, a series of Bi2Te3/X mol% MoS2 (X = 0, 25, 50, 75) bulk nanocomposites were prepared by hydrothermal reaction followed by reactive spark plasma sintering (SPS). X-ray diffraction analysis (XRD) indicates that the native nanopowders, comprising of Bi2Te3/MoS2 heterostructure, are highly reactive during the electric field-assisted sintering by SPS. The nano-sized MoS2 particles react with the Bi2Te3 plates matrix forming a mixed-anion compound, Bi2Te2S, at the interface between the nanoplates. The transport properties characterizations revealed a significant influence of the nanocomposite structure formation on the native electrical conductivity, Seebeck coefficient, and thermal conductivity of the initial Bi2Te3 matrix. As a result, enhanced ZT values have been obtained in Bi2Te3/25 mol% MoS2 over the temperature range of 300-475 K induced mainly by a significant increase in the electrical conductivity.

| S-EPMC8746225 | biostudies-literature

Field-effect at electrical contacts to two-dimensional materials.

Project description:The inferior electrical contact to two-dimensional (2D) materials is a critical challenge for their application in post-silicon very large-scale integrated circuits. Electrical contacts were generally related to their resistive effect, quantified as contact resistance. With a systematic investigation, this work demonstrates a capacitive metal-insulator-semiconductor (MIS) field-effect at the electrical contacts to 2D materials: The field-effect depletes or accumulates charge carriers, redistributes the voltage potential, and gives rise to abnormal current saturation and nonlinearity. On one hand, the current saturation hinders the devices' driving ability, which can be eliminated with carefully engineered contact configurations. On the other hand, by introducing the nonlinearity to monolithic analog artificial neural network circuits, the circuits' perception ability can be significantly enhanced, as evidenced using a coronavirus disease 2019 (COVID-19) critical illness prediction model. This work provides a comprehension of the field-effect at the electrical contacts to 2D materials, which is fundamental to the design, simulation, and fabrication of electronics based on 2D materials.Electronic supplementary materialSupplementary material (results of the simulation and SEM) is available in the online version of this article at 10.1007/s12274-021-3670-y.

| S-EPMC8316888 | biostudies-literature

Formation Mechanism of High-Purity Ti2AlN Powders under Microwave Sintering.

Project description:In the present study, high-purity ternary-phase nitride (Ti2AlN) powders were synthesized through microwave sintering using TiH2, Al, and TiN powders as raw materials. X-ray diffraction (XRD), differential scanning calorimetry (DSC), transmission electron microscopy (TEM), and scanning electron microscopy (SEM) were adopted to characterize the as-prepared powders. It was found that the Ti2AlN powder prepared by the microwave sintering of the 1TiH2/1.15Al/1TiN mixture at 1250 °C for 30 min manifested great purity (96.68%) with uniform grain size distribution. The formation mechanism of Ti2AlN occurred in four stages. The solid-phase reaction of Ti/Al and Ti/TiN took place below the melting point of aluminum and formed Ti2Al and TiN0.5 phases, which were the main intermediates in Ti2AlN formation. Therefore, the present work puts forward a favorable method for the preparation of high-purity Ti2AlN powders.

| S-EPMC7728301 | biostudies-literature

Preparation of 3D printed silicon nitride bioceramics by microwave sintering.

Project description:Silicon nitride (Si3N4) is a bioceramic material with potential applications. Customization and high reliability are the foundation for the widespread application of Si3N4 bioceramics. This study constructed a new microwave heating structure and successfully prepared 3D printed dense Si3N4 materials, overcoming the adverse effects of a large amount of 3D printed organic forming agents on degreasing and sintering processes, further improving the comprehensive performance of Si3N4 materials. Compared with control materials, the 3D printed Si3N4 materials by microwave sintering have the best mechanical performance: bending strength is 928 MPa, fracture toughness is 9.61 MPa·m1/2. Meanwhile, it has the best biocompatibility and antibacterial properties, and cells exhibit the best activity on the material surface. Research has shown that the excellent mechanical performance and biological activity of materials are mainly related to the high-quality degreasing, high cleanliness sintering environment, and high-quality liquid-phase sintering of materials in microwave environments.

| S-EPMC11233628 | biostudies-literature

Effect of External Electric Field Stress on Gliadin Protein Conformation.

Project description:A molecular dynamic (MD) modeling approach was applied to evaluate the effect of external electric field on gliadin protein structure and surface properties. Static electric field strengths of 0.001 V/nm and 0.002 V/nm induced conformational changes in the protein but had no significant effect on its surface properties. The study of hydrogen bond evolution during the course of simulation revealed that the root mean square deviation, radius of gyration and secondary structure formation, all depend significantly on the number hydrogen bonds formed. This study demonstrated that it is necessary to gain insight into protein dynamics under external electric field stress, in order to develop the novel food processing techniques that can be potentially used to reduce or eradicate food allergens.

| S-EPMC5302742 | biostudies-literature

Large electric field-enhanced-hardness effect in a SiO2 film.

Project description:Silicon dioxide films are extensively used in nano and micro-electromechanical systems. Here we studied the influence of an external electric field on the mechanical properties of a SiO2 film by using nanoindentation technique of atomic force microscopy (AFM) and friction force microscopy (FFM). A giant augmentation of the relative elastic modulus was observed by increasing the localized electric field. A slight decrease in friction coefficients was also clearly observed by using FFM with the increase of applied tip voltage. The reduction of the friction coefficients is consistent with the great enhancement of sample hardness by considering the indentation-induced deformation during the friction measurements.

| S-EPMC3970131 | biostudies-literature

Strain Gated Bilayer Molybdenum Disulfide Field Effect Transistor with Edge Contacts.

Project description:Silicon nitride stress capping layer is an industry proven technique for increasing electron mobility and drive currents in n-channel silicon MOSFETs. Herein, the strain induced by silicon nitride is firstly characterized through the changes in photoluminescence and Raman spectra of a bare bilayer MoS2 (Molybdenum disulfide). To make an analogy of the strain-gated silicon MOSFET, strain is exerted to a bilayer MoS2 field effect transistor (FET) through deposition of a silicon nitride stress liner that warps both the gate and the source-drain area. Helium plasma etched MoS2 layers for edge contacts. Current on/off ratio and other performance metrics are measured and compared as the FETs evolve from back-gated, to top-gated and finally, to strain-gated configurations. While the indirect band gap of bilayer MoS2 at 0% strain is 1.25?eV, the band gap decreases as the tensile strain increases on an average of ~100?meV per 1% tensile strain, and the decrease in band gap is mainly due to lowering the conduction band at K point. Comparing top- and strain-gated structures, we find a 58% increase in electron mobility and 46% increase in on-current magnitude, signalling a benign effect of tensile strain on the carrier transport properties of MoS2.

| S-EPMC5301248 | biostudies-literature

Mobility overestimation due to gated contacts in organic field-effect transistors.

Project description:Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current-voltage characteristics and interpreted by using the classical metal oxide-semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm(2) V(-1) s(-1)), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current-voltage characterization are overestimated by one order of magnitude or more.

| S-EPMC4792947 | biostudies-literature

Effect of nanosecond pulsed electric field (nsPEF) on gene expression in TM3 Leydig cells

Project description:The aim of our study was to analyze cell response to nanosecond pulsed electric field (nsPEF) at the gene expression level. TM3 Leydig cells were used as a model. Transcriptomics analysis was carried out immediately after exposure (0 h) and 4 or 24 h after treatment.

2021-10-20 | GSE155355 | GEO

Enhancement of anodic current attributed to oxygen evolution on ?-Fe2O3 electrode by microwave oscillating electric field.

Project description:Various microwave effects on chemical reactions have been observed, reported and compared to those carried out under conventional heating. These effects are classified into thermal effects, which arise from the temperature rise caused by microwaves, and non-thermal effects, which are attributed to interactions between substances and the oscillating electromagnetic fields of microwaves. However, there have been no direct or intrinsic demonstrations of the non-thermal effects based on physical insights. Here we demonstrate the microwave enhancement of oxidation current of water to generate dioxygen with using an ?-Fe2O3 electrode induced by pulsed microwave irradiation under constantly applied potential. The rectangular waves of current density under pulsed microwave irradiation were observed, in other words the oxidation current of water was increased instantaneously at the moment of the introduction of microwaves, and stayed stably at the plateau under continuous microwave irradiation. The microwave enhancement was observed only for the ?-Fe2O3 electrode with the specific surface electronic structure evaluated by electrochemical impedance spectroscopy. This discovery provides a firm evidence of the microwave special non-thermal effect on the electron transfer reactions caused by interaction of oscillating microwaves and irradiated samples.

| S-EPMC5064412 | biostudies-other

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data