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Design and fabrication of high-performance diamond triple-gate field-effect transistors.

ABSTRACT: The lack of large-area single-crystal diamond wafers has led us to downscale diamond electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend device downscaling and increase device output current. The device's electrical properties are compared with those of planar-type MOSFETs, which are fabricated simultaneously on the same substrate. The triple-gate MOSFET's output current (174.2?mA mm(-1)) is much higher than that of the planar-type device (45.2?mA mm(-1)), and the on/off ratio and subthreshold swing are more than 10(8) and as low as 110?mV dec(-1), respectively. The fabrication of these H-diamond triple-gate MOSFETs will drive diamond electronic device development forward towards practical applications.

SUBMITTER: Liu J

PROVIDER: S-EPMC5052526 | biostudies-other | 2016 Oct

REPOSITORIES: biostudies-other

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Design and fabrication of high-performance diamond triple-gate field-effect transistors.

Liu Jiangwei J Ohsato Hirotaka H Wang Xi X Liao Meiyong M Koide Yasuo Y

Scientific reports 20161006

The lack of large-area single-crystal diamond wafers has led us to downscale diamond electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend device downscaling and increase device output current. The device's electrical properties are compared with those of planar-type MOSFETs, which are fabricated simultaneously on the same substrate. The triple-gate MOSFET's output current (174.2 mA mm ...[more]

PMID: 27708372

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