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Ultrathin Co-O oxide layer-driven perpendicular magnetic anisotropy in a CoO/[Co/Pd]m multilayer matrix upon annealing.


ABSTRACT: Ferromagnetic/noble metal multilayer (ML) frames are expected to serve as reliable building blocks in a variety of perpendicular magnetic anisotropy (PMA) based spintronic devices. However, ultrathin ML matrices are highly susceptible to unintended reduction of electron spin polarization in the as-grown or annealed states and often require a large repeat number. Here, we introduce a simple approach to achieve thermally stable PMA in ultrathin [Co/Pd]3 MLs involving the incorporation of an ultrathin CoO capping layer. The thickness and oxygen content of the CoO layer are critical parameters to achieve enhanced PMA in ultrathin [Co/Pd]3/CoO MLs post-annealed up to 400?°C. An extensive analysis of structural features identified that robust PMA characteristics in [Co/Pd]3/CoO MLs are linked with thermally activated oxygen atom diffusion leading to structural reconfiguration upon annealing. The possible origin of the enhanced PMA in our [Co/Pd]3/CoO ML samples after high-temperature annealing is discussed, thereby enabling their use in future spintronic-related devices.

SUBMITTER: Chung WS 

PROVIDER: S-EPMC5122862 | biostudies-other | 2016 Nov

REPOSITORIES: biostudies-other

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Ultrathin Co-O oxide layer-driven perpendicular magnetic anisotropy in a CoO/[Co/Pd]<sub>m</sub> multilayer matrix upon annealing.

Chung Woo Seong WS   Yang Seung Mo SM   Kim Tae Whan TW   Hong Jin Pyo JP  

Scientific reports 20161125


Ferromagnetic/noble metal multilayer (ML) frames are expected to serve as reliable building blocks in a variety of perpendicular magnetic anisotropy (PMA) based spintronic devices. However, ultrathin ML matrices are highly susceptible to unintended reduction of electron spin polarization in the as-grown or annealed states and often require a large repeat number. Here, we introduce a simple approach to achieve thermally stable PMA in ultrathin [Co/Pd]<sub>3</sub> MLs involving the incorporation o  ...[more]

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