Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals.

ABSTRACT: Recently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923?K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we report that n-type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites. In addition, it was found that the carrier concentration increases with Bi content, which has a great influence on the thermoelectric properties of n-type SnSe single crystals. Indeed, we achieved the maximum ZT value of 2.2 along b axis at 733?K in the most highly doped n-type SnSe with a carrier density of -2.1 × 1019?cm-3 at 773?K.

SUBMITTER: Duong AT

PROVIDER: S-EPMC5160008 | biostudies-other | 2016 Dec

REPOSITORIES: biostudies-other

ACCESS DATA

Json Xml

Publications

Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals.

Duong Anh Tuan AT Nguyen Van Quang VQ Duvjir Ganbat G Duong Van Thiet VT Kwon Suyong S Song Jae Yong JY Lee Jae Ki JK Lee Ji Eun JE Park SuDong S Min Taewon T Lee Jaekwang J Kim Jungdae J Cho Sunglae S

Nature communications 20161212

Recently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we report that n-type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites. In addition, it was found that the carrier concentration increases with Bi content, which has a gr ...[more]

PMID: 27941762

Similar Datasets

Thermoelectric Properties of Hot-Pressed Bi-Doped n-Type Polycrystalline SnSe.

Project description:?: We report on the successful preparation of Bi-doped n-type polycrystalline SnSe by hot-press method. We observed anisotropic transport properties due to the (h00) preferred orientation of grains along the pressing direction. The electrical conductivity perpendicular to the pressing direction is higher than that parallel to the pressing direction, 12.85 and 6.46 S cm-1 at 773 K for SnSe:Bi 8% sample, respectively, while thermal conductivity perpendicular to the pressing direction is higher than that parallel to the pressing direction, 0.81 and 0.60 W m-1 K-1 at 773 K for SnSe:Bi 8% sample, respectively. We observed a bipolar conducting mechanism in our samples leading to n- to p-type transition, whose transition temperature increases with Bi concentration. Our work addressed a possibility to dope polycrystalline SnSe by a hot-pressing process, which may be applied to module applications. HIGHLIGHTS:1. We have successfully achieved Bi-doped n-type polycrystalline SnSe by the hot-press method. 2. We observed anisotropic transport properties due to the [h00] preferred orientation of grains along pressing direction. 3. We observed a bipolar conducting mechanism in our samples leading to n- to p-type transition.

| S-EPMC6035122 | biostudies-literature

Defects controlled hole doping and multivalley transport in SnSe single crystals.

Project description:SnSe is a promising thermoelectric material with record-breaking figure of merit. However, to date a comprehensive understanding of the electronic structure and most critically, the self-hole-doping mechanism in SnSe is still absent. Here we report the highly anisotropic electronic structure of SnSe investigated by angle-resolved photoemission spectroscopy, in which a unique pudding-mould-shaped valence band with quasi-linear energy dispersion is revealed. We prove that p-type doping in SnSe is extrinsically controlled by local phase segregation of SnSe2 microdomains via interfacial charge transferring. The multivalley nature of the pudding-mould band is manifested in quantum transport by crystallographic axis-dependent weak localisation and exotic non-saturating negative magnetoresistance. Strikingly, quantum oscillations also reveal 3D Fermi surface with unusual interlayer coupling strength in p-SnSe, in which individual monolayers are interwoven by peculiar point dislocation defects. Our results suggest that defect engineering may provide versatile routes in improving the thermoelectric performance of the SnSe family.

| S-EPMC5752673 | biostudies-literature

Giant Seebeck effect in Ge-doped SnSe.

Project description:Thermoelectric materials may contribute in the near future as new alternative sources of sustainable energy. Unprecedented thermoelectric properties in p-type SnSe single crystals have been recently reported, accompanied by extremely low thermal conductivity in polycrystalline samples. In order to enhance thermoelectric efficiency through proper tuning of this material we report a full structural characterization and evaluation of the thermoelectric properties of novel Ge-doped SnSe prepared by a straightforward arc-melting method, which yields nanostructured polycrystalline samples. Ge does not dope the system in the sense of donating carriers, yet the electrical properties show a semiconductor behavior with resistivity values higher than that of the parent compound, as a consequence of nanostructuration, whereas the Seebeck coefficient is higher and thermal conductivity lower, favorable to a better ZT figure of merit.

| S-EPMC4890000 | biostudies-other

Negative Magnetoresistance in Hopping Regime of Lightly Doped Thermoelectric SnSe.

Project description:Semiconducting SnSe, an analog of black phosphorus, recently attracted great scientific interest due to a disputed report of a large thermoelectric figure of merit, which has not been reproduced subsequently. Here we concentrate on the low-temperature ground state. To gain a better understanding of the system, we present magneto-transport properties in high-quality single crystals of as-grown, lightly doped SnSe down to liquid helium temperatures. We show that SnSe behaves as a p-type doped semiconductor in the vicinity of a metal-insulator transition. Electronic transport at the lowest temperatures is dominated by the hopping mechanism. Negative magnetoresistance at low fields is well described by antilocalization, while positive magnetoresistance at higher fields is consistent with the shrinkage of localized impurity wavefunctions. At higher temperatures, a dilute metallic regime is realized where elusive T2 and B2 resistivity dependence is observed, posing a challenge to theoretical comprehension of the underlying physical mechanism.

| S-EPMC10095749 | biostudies-literature

High zT and Its Origin in Sb-doped GeTe Single Crystals.

Project description:A record high zT of 2.2 at 740 K is reported in Ge0.92Sb0.08Te single crystals, with an optimal hole carrier concentration ?4 × 1020 cm-3 that simultaneously maximizes the power factor (PF) ?56 µW cm-1 K-2 and minimizes the thermal conductivity ?1.9 Wm-1 K-1. In addition to the presence of herringbone domains and stacking faults, the Ge0.92Sb0.08Te exhibits significant modification to phonon dispersion with an extra phonon excitation around ?5-6 meV at ? point of the Brillouin zone as confirmed through inelastic neutron scattering (INS) measurements. Density functional theory (DFT) confirmed this phonon excitation, and predicted another higher energy phonon excitation ?12-13 meV at W point. These phonon excitations collectively increase the number of phonon decay channels leading to softening of phonon frequencies such that a three-phonon process is dominant in Ge0.92Sb0.08Te, in contrast to a dominant four-phonon process in pristine GeTe, highlighting the importance of phonon engineering approaches to improving thermoelectric (TE) performance.

| S-EPMC7740100 | biostudies-literature

Peculiar Structural Effects in Pure and Doped Functional Single Crystals of Complex Compositions.

Project description:Results of a detailed structural characterization of nominally pure and doped single crystals of scheelite, eulytin, and perovskite families obtained by melt methods were considered and analyzed. The influence of growth and post-growth annealing conditions on actual compositions of crystals is shown. The reasons for the coloration of the crystals are explained. A change in crystal symmetry due to crystal-chemical and growth reasons is considered. The use of structural analysis and X-ray absorption spectroscopy is substantiated to reveal the role of activator ions in the formation of statistical and local structures, respectively. A relationship between the distribution of activator ions over crystallographic sites and photoluminescent parameters of materials is established, which allows selecting optimal systems for the application. The combined results of studying single-crystal compounds of other classes (huntite, sillenite, whitlockite, garnet, tetragonal bronzes) allow formulating and summarizing structural effects that appeared in the systems and caused by various factors and, in many cases, due to the local environment of cations. A principal difference in the structural behavior of solid solutions and doped compounds is shown. The methodology developed for single-crystal samples of complex compositions can be recommended for the systematic structural studies of functional materials of different compositions.

| S-EPMC7287726 | biostudies-literature

Optical Properties of Mg, Fe, Co-Doped Near-Stoichiometric LiTaO₃ Single Crystals.

Project description:Mg, Fe co-doped near-stoichiometric lithium tantalite (SLT) single crystals were grown by employing the zone-leveling Czochralski (ZLCz) technique. The optical properties, holographic parameters, as well as the composition of the grown crystals were measured. It was found that the Li/Ta ratio decreased with the doping of Mg and Fe ions. A red shift was observed in absorption spectrum for the Mg, Fe co-doped crystals compared to the undoped and Mg-doped ones. The effect of the iron ions (Fe2+ and Fe3+) was further discussed based on the specified absorption bands. Moreover, the occupation mechanism for the defects was discussed by using the IR absorption spectrum, which was attributed to the FeTa3- defects in the highly Fe-doped crystal. In addition, the holographic parameters were also found to be improved with a higher Fe/Ta ratio in the crystals.

| S-EPMC5448910 | biostudies-other

Magnetic and Electrical Characteristics of Nd3+-Doped Lead Molybdato-Tungstate Single Crystals.

Project description:Single crystals of Pb1-3x▯xNd2x(MoO4)1-3x(WO4)3x (PNMWO) with scheelite-type structure, where ▯ denotes cationic vacancies, have been successfully grown by the Czochralski method in air and under 1 MPa. This paper presents the results of structural, optical, magnetic and electrical, as well as the broadband dielectric spectroscopy measurements of PNMWO single crystals. Research has shown that replacing diamagnetic Pb2+ ions with paramagnetic Nd3+ ones, with a content not exceeding 0.01 and possessing a screened 4f-shell, revealed a significant effect of orbital diamagnetism and Van Vleck's paramagnetism, n-type electrical conductivity with an activation energy of 0.7 eV in the intrinsic area, a strong increase of the power factor above room temperature for a crystal with x = 0.005, constant dielectric value (~30) and loss tangent (~0.01) up to room temperature. The Fermi energy (~0.04 eV) and the Fermi temperature (~500 K) determined from the diffusion component of thermopower showed shallow donor levels.

| S-EPMC9866789 | biostudies-literature

Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications.

Project description:Based on recent works, the most desirable high-temperature thermoelectric material would be highly-doped Si1-xGex crystals or films with sufficiently high Ge concentrations so that simultaneous enhancing the power factor and wave-engineering of phonons could be possible on the ballistic thermal conductor. However, available thin film deposition methods such as metal organic chemical vapor deposition, electron-beam evaporation, or sputtering are unable to produce highly-doped SiGe single crystals or thick films of high quality. To fabricate the desired material, we here employ liquid phase epitaxy to make highly-doped (up to 2% GaP doping) SiGe crystals with minimized concentration variations on Si (111) and (100) substrates. We find that growing Si1-xGex (x = 0.05~0.25) crystals from Ga solvents at relatively high vacuum pressure (0.1 torr) displays significant deviations from previous calculated phase diagram. Moreover, doping GaP into SiGe is found to affect the solubility of the system but not the resulting Ge concentration. We thus plot a new pressure-dependent phase diagram. We further demonstrate that the new pressure-induced liquid phase epitaxy technique can yield Si1-xGex crystals of much higher Ge concentrations (x > 0.8) than those grown by the conventional method.

| S-EPMC6416246 | biostudies-literature

Intrinsic Enhancement of Dielectric Permittivity in (Nb + In) co-doped TiO2 single crystals.

Project description:The development of dielectric materials with colossal permittivity is important for the miniaturization of electronic devices and fabrication of high-density energy-storage devices. The electron-pinned defect-dipoles has been recently proposed to boost the permittivity of (Nb?+?In) co-doped TiO2 to 105. However, the follow-up studies suggest an extrinsic contribution to the colossal permittivity from thermally excited carriers. Herein, we demonstrate a marked enhancement in the permittivity of (Nb?+?In) co-doped TiO2 single crystals at sufficiently low temperatures such that the thermally excited carriers are frozen out and exert no influence on the dielectric response. The results indicate that the permittivity attains quadruple of that for pure TiO2. This finding suggests that the electron-pinned defect-dipoles add an extra dielectric response to that of the TiO2 host matrix. The results offer a novel approach for the development of functional dielectric materials with large permittivity by engineering complex defects into bulk materials.

| S-EPMC5509748 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data