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A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics.

ABSTRACT: Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm-1 and Seebeck coefficient from 100 to 60 ?V K-1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m-1 K-1 gives rise to a thermoelectric Figure of merit ZT ? 10-4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

SUBMITTER: Kiefer D

PROVIDER: S-EPMC5238747 | biostudies-other | 2017 Jan

REPOSITORIES: biostudies-other

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A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics.

Kiefer David D Yu Liyang L Fransson Erik E Gómez Andrés A Primetzhofer Daniel D Amassian Aram A Campoy-Quiles Mariano M Müller Christian C

Advanced science (Weinheim, Baden-Wurttemberg, Germany) 20160930 1

Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm<sup>-1</sup> and Seebeck coefficient from 100 to 60 μV K<sup>-1</sup> upon addition of the ...[more]

PMID: 28105396

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