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All-nitride AlxGa1-xN:Mn/GaN distributed Bragg reflectors for the near-infrared.

ABSTRACT: Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. While III-nitride optoelectronics in the visible and ultraviolet spectral range is widely established, all-nitride efficient devices in the near-infrared (NIR) are still wanted. Here, through a comprehensive protocol of design, modeling, epitaxial growth and in-depth characterization, we develop AlxGa1-xN:Mn/GaN NIR distributed Bragg reflectors and we show their efficiency in combination with GaN:(Mn,Mg) layers containing Mn-Mgk complexes optically active in the near-infrared range of wavelengths.

SUBMITTER: Capuzzo G

PROVIDER: S-EPMC5309887 | biostudies-other | 2017 Feb

REPOSITORIES: biostudies-other

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All-nitride Al<sub>x</sub>Ga<sub>1-x</sub>N:Mn/GaN distributed Bragg reflectors for the near-infrared.

Capuzzo Giulia G Kysylychyn Dmytro D Adhikari Rajdeep R Li Tian T Faina Bogdan B Tarazaga Martín-Luengo Aitana A Bonanni Alberta A

Scientific reports 20170215

Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. While III-nitride optoelectronics in the visible and ultraviolet spectral range is widely established, all-nitride efficient devices in the near-infrared (NIR) are still wanted. Here, through a comprehen ...[more]

PMID: 28198432

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