High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide.

ABSTRACT: The high-frequency performance of transistors is usually assessed by speed and gain figures of merit, such as the maximum oscillation frequency f max, cutoff frequency f T, ratio f max/f T, forward transmission coefficient S 21, and open-circuit voltage gain A v. All these figures of merit must be as large as possible for transistors to be useful in practical electronics applications. Here we demonstrate high-performance graphene field-effect transistors (GFETs) with a thin AlOx gate dielectric which outperform previous state-of-the-art GFETs: we obtained f max/f T?>?3, A v?>?30?dB, and S 21?=?12.5?dB (at 10?MHz and depending on the transistor geometry) from S-parameter measurements. A dc characterization of GFETs in ambient conditions reveals good current saturation and relatively large transconductance ~600?S/m. The realized GFETs offer the prospect of using graphene in a much wider range of electronic applications which require substantial gain.

SUBMITTER: Guerriero E 

PROVIDER: S-EPMC5445082 | biostudies-other | 2017 May

REPOSITORIES: biostudies-other