Germanium Based Field-Effect Transistors: Challenges and Opportunities.
Ontology highlight
ABSTRACT:
SUBMITTER: Goley PS
PROVIDER: S-EPMC5453288 | biostudies-other | 2014 Mar
REPOSITORIES: biostudies-other
Similar Datasets
Project description:In this work, we demonstrate for the first time an ultra-low contact resistance few-layered black phosphorus (BP) transistor with metallic PGex contacts formed by rapid thermal annealing (RTA). The on-state current of the transistor can be significantly improved and the ION/IOFF ratio increases by almost 2 order. The hole mobility is enhanced by 25 times to 227 cm2V-1s-1. The contact resistance extracted by the transfer length method is 0.365 kΩ∙μm, which is the lowest value in black phosphorus transistors without degradation of ION/IOFF ratio. In addition, the I-V curve of the transistor with PGex contact is linear compared to that with Ti contact at 80 K, indicating that a metallic ohmic contact is successfully formed. Finally, X-ray photoelectron spectroscopy is used to characterize the PGex compound. A signal of P-Ge bond is first observed, further verifying the doping of Ge into BP and the formation of the PGex alloy.
| S-EPMC5714961 | biostudies-literature
Project description:Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide, and gallium nitride have reached their physical performance limits. Therefore, new materials with high carrier velocities should be sought for the fabrication of next-generation, ultra-high-speed transistors. Indium nitride (InN) has attracted much attention for this purpose because of its high electron drift velocity under a high electric field. Thick InN films have been applied to the fabrication of field-effect transistors (FETs), but the performance of the thick InN transistors was discouraging, with no clear linear-saturation output characteristics and poor on/off current ratios. Here, we report the epitaxial deposition of ultrathin cubic InN on insulating oxide yttria-stabilized zirconia substrates and the first demonstration of ultrathin-InN-based FETs. The devices exhibit high on/off ratios and low off-current densities because of the high quality top and bottom interfaces between the ultrathin cubic InN and oxide insulators. This first demonstration of FETs using a ultrathin cubic indium nitride semiconductor will thus pave the way for the development of next-generation high-speed electronics.
| S-EPMC3912472 | biostudies-literature
Project description:Future data-intensive applications will have integrated circuit architectures combining energy-efficient transistors, high-density data storage and electro-optic sensing arrays in a single chip to perform in situ processing of captured data. The costly dense wire connections in 3D integrated circuits and in conventional packaging and chip-stacking solutions could affect data communication bandwidths, data storage densities, and optical transmission efficiency. Here we investigated all-ferroelectric nonvolatile LiNbO3 transistors to function through redirection of conducting domain walls between the drain, gate and source electrodes. The transistor operates as a single-pole, double-throw digital switch with complementary on/off source and gate currents controlled using either the gate or source voltages. The conceived device exhibits high wall current density and abrupt off-and-on state switching without subthreshold swing, enabling nonvolatile memory-and-sensor-in-logic and logic-in-memory-and-sensor capabilities with superior energy efficiency, ultrafast operation/communication speeds, and high logic/storage densities.
| S-EPMC7272614 | biostudies-literature
Project description:Incorporation of pigment or dye molecules as building units is of great interest in the development of semiconducting polymers, due to their strong intermolecular interactions arising from the strong local dipoles in the unit structure, which would facilitate the charge transport property. In this paper, semiconducting polymers based on well-known pigments, namely, quinacridone and diketopyrrolopyrrole, are synthesized and characterized. The π-stacking distances are found to be 3.5-3.8 Å, which is fairly narrow for semiconducting polymers, indicating that they possess strong intermolecular interactions. Interestingly, polymer orientation is influenced by the composition of alkyl side chains. While the edge-on orientation is observed when the linear alkyl groups are introduced for all the side chains, the face-on orientation is observed when the branched alkyl groups are introduced either in the quinacridone or diketopyrrolopyrrole unit. It is found that the electronic structure of the present polymers is mostly affected by that of the diketopyrrolopyrrole unit, as evidenced by the absorption spectra and computation. Although the field-effect mobility of the polymers is modest, i.e., in the order of 10-4-10-3 cm²/Vs, these findings could be important information for the development of semiconducting polymers.
| S-EPMC5512964 | biostudies-other
Project description:Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm(2)/V · s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 10(5)) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm(2)/V · s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.
| S-EPMC4127518 | biostudies-literature
Project description:Diketopyrrolopyrrole (DPP), due to its good planarity, π-conjugate structure, thermal stability, and structural modifiability, has received much attention from the scientific community as an excellent semiconductor material for its applications in the field of optoelectronics, such as organic solar cells, organic photovoltaics, and organic field effect transistors. In this study, a new small molecule, pyrrolopyrrole aza-BODIPY (PPAB), based on the thiophene-substituted DPP structure was developed using the Schiff-base formation reaction of DPP and heteroaromatic amines. Absorption spectroscopy, electrochemistry, X-ray diffraction, molecular theoretical simulation calculation were performed, and organic field-effect transistor properties based on PPAB were investigated. It was found that PPAB exhibits a broad absorption range in the visible and near-infrared regions, which is attributed to its long-range conjugate structure. In addition, it is worth noting that PPAB has multiple F atoms resulting in the low LUMO level, which is conducive to the injection and transportation of charge carriers between the semiconductor layer and the electrode. Meanwhile, its hole carrier mobility is up to 1.3 × 10-3 cm2 V-1 s-1 due to its large conjugate structure, good intramolecular charge transfer effect, and high degree of coplanarity. In this study, a new chromophore with electron-deficient ability for designing high-performance semiconductors was successfully synthesized.
| S-EPMC9271750 | biostudies-literature
Project description:Due to ultra-high reactivity, direct determination of free radicals, especially hydroxyl radical (•OH) with ultra-short lifetime, by field-effect transistor (FET) sensors remains a challenge, which hampers evaluating the role that free radical plays in physiological and pathological processes. Here, we develop a •OH FET sensor with a graphene channel functionalized by metal ion indicators. At the electrolyte/graphene interface, highly reactive •OH cuts the cysteamine to release the metal ions, resulting in surface charge de-doping and a current response. By this inner-cutting strategy, the •OH is selectively detected with a concentration down to 10-9 M. Quantitative metal ion doping enables modulation of the device sensitivity and a quasi-quantitative detection of •OH generated in aqueous solution or from living cells. Owing to its high sensitivity, selectivity, real-time label-free response, capability for quasi-quantitative detection and user-friendly portable feature, it is valuable in biological research, human health, environmental monitoring, etc.
| S-EPMC6449349 | biostudies-literature
Project description:In this study, a novel approach to the fabrication of a multimodal temperature and force sensor on ultrathin, conformable and flexible substrates is presented. This process involves coupling a charge-modulated organic field-effect transistor (OCMFET) with a pyro/piezoelectric element, namely a commercial film of poly-vinylene difluoride (PVDF). The proposed device is able to respond to both pressure stimuli and temperature variations, demonstrating the feasibility of the approach for the development of low-cost, highly sensitive and conformable multimodal sensors. The overall thickness of the device is 1.2??m, being thus able to conform to any surface (including the human body), while keeping its electrical performance. Furthermore, it is possible to discriminate between simultaneously applied temperature and pressure stimuli by coupling sensing surfaces made of poled and unpoled spin-coated PVDF-trifluoroethylene (PVDF-TrFE, a PVDF copolymer) with OCMFETs. This demonstrates the possibility of creating multimodal sensors that can be employed for applications in several fields, ranging from robotics to wearable electronics.
| S-EPMC5966445 | biostudies-literature
Project description:Semiconducting two-dimensional transition metal dichalcogenides are emerging as top candidates for post-silicon electronics. While most of them exhibit isotropic behaviour, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here we present atomically thin rhenium disulfide (ReS2) flakes with unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated monolayer and few-layer ReS2 field-effect transistors, which exhibit competitive performance with large current on/off ratios (?10(7)) and low subthreshold swings (100?mV per decade). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known two-dimensional semiconducting materials. Furthermore, we successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS2 anisotropic field-effect transistors, suggesting the promising implementation of large-scale two-dimensional logic circuits. Our results underscore the unique properties of two-dimensional semiconducting materials with low crystal symmetry for future electronic applications.
| S-EPMC4432591 | biostudies-literature
Project description:In this study, we reported the synthesis and characterization of a novel hyperbranched polymer (HBPs) tris[(4-phenyl)amino-alt-4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b;4,5-b']dithiophene] (PTPABDT) composed of benzo[1,2-b:4,5-b']dithiophene (BDT) and triphenyleamine (TPA) constituent subunits by A3 + B2 type Stille's reaction. An estimated optical band gap of 1.69 eV with HOMO and LUMO levels of -5.29 eV and -3.60 eV, respectively, as well as a high thermal stability up to 398 °C were characterized for the synthesized polymer. PTPABDT fabricated as an encapsulated top gate/bottom contact (TGBC), organic field effect transistors (OFET) exhibited a p-type behavior with maximum field-effect mobility (µmax) and an on/off ratio of 1.22 × 10-3 cm2 V-1 s-1 and 7.47 × 102, respectively.
| S-EPMC6955725 | biostudies-literature