Films of Carbon Nanomaterials for Transparent Conductors.
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ABSTRACT:
SUBMITTER: Ho X
PROVIDER: S-EPMC5458954 | biostudies-other | 2013 May
REPOSITORIES: biostudies-other
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Project description:There is a great need for viable alternatives to today's transparent conductive film using largely indium tin oxide. We report the fabrication of a new type of flexible transparent conductive film using silver nanowires (AgNW) and single-walled carbon nanotube (SWCNT) networks which are fully embedded in a UV curable resin substrate. The hybrid SWCNTs-AgNWs film is relatively flat so that the RMS roughness of the top surface of the film is 3 nm. Addition of SWCNTs networks make the film resistance uniform; without SWCNTs, sheet resistance of the surface composed of just AgNWs in resin varies from 20 Ω/sq to 107 Ω/sq. With addition of SWCNTs embedded in the resin, sheet resistance of the hybrid film is 29 ± 5 Ω/sq and uniform across the 47 mm diameter film discs; further, the optimized film has 85% transparency. Our lamination-transfer UV process doesn't need solvent for sacrificial substrate removal and leads to good mechanical interlocking of the nano-material networks. Additionally, electrochemical study of the film for supercapacitors application showed an impressive 10 times higher current in cyclic voltammograms compared to the control without SWCNTs. Our fabrication method is simple, cost effective and enables the large-scale fabrication of flat and flexible transparent conductive films.
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Project description:Indium oxide (In2O3)-based transparent conducting oxides (TCOs) have been widely used and studied for a variety of applications, such as optoelectronic devices. However, some of the more promising dopants (zirconium, hafnium, and tantalum) for this oxide have not received much attention, as studies have mainly focused on tin and zinc, and even fewer have been explored by solution processes. This work focuses on developing solution-combustion-processed hafnium (Hf)-doped In2O3 thin films and evaluating different annealing parameters on TCO's properties using a low environmental impact solvent. Optimized TCOs were achieved for 0.5 M% Hf-doped In2O3 when produced at 400 °C, showing high transparency in the visible range of the spectrum, a bulk resistivity of 5.73 × 10-2 Ω.cm, a mobility of 6.65 cm2/V.s, and a carrier concentration of 1.72 × 1019 cm-3. Then, these results were improved by using rapid thermal annealing (RTA) for 10 min at 600 °C, reaching a bulk resistivity of 3.95 × 10 -3 Ω.cm, a mobility of 21 cm2/V.s, and a carrier concentration of 7.98 × 1019 cm-3, in air. The present work brings solution-based TCOs a step closer to low-cost optoelectronic applications.
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Project description:Single-walled carbon nanotube (SWNT) and other carbon-based coatings are being considered as replacements for indium tin oxide (ITO). The problems of transparent conductors (TCs) coatings from SWNT and similar materials include poor mechanical properties, high roughness, low temperature resilience, and fast loss of conductivity. The simultaneous realization of these desirable characteristics can be achieved using high structural control of layer-by-layer (LBL) deposition, which is demonstrated by the assembly of hydroethyl cellulose (HOCS) and sulfonated polyetheretherketone (SPEEK)-SWNTs. A new type of SWNT doping based on electron transfer from valence bands of nanotubes to unoccupied levels of SPEEK through ?-? interactions was identified for this system. It leads to a conductivity of 1.1 × 10(5) S/m at 66 wt % loadings of SWNT. This is better than other polymer/SWNT composites and translates into surface conductivity of 920 ?/? and transmittance of 86.7% at 550 nm. The prepared LBL films also revealed unusually high temperature resilience up to 500 °C, and low roughness of 3.5 nm (ITO glass -2.4 nm). Tensile modulus, ultimate strength, and toughness of such coatings are 13 ± 2 GPa, 366 ± 35 MPa, and 8 ± 3 kJ/m(3), respectively, and exceed corresponding parameters of all similar TCs. The cumulative figure of merit, ?(TC), which included the critical failure strain relevant for flexible electronics, was ?(TC) = 0.022 and should be compared to ?(TC) = 0.006 for commercial ITO. Further optimization is possible using stratified nanoscale coatings and improved doping from the macromolecular LBL components.
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Project description:Here we construct mechanically flexible and optically transparent thin film solid state supercapacitors by assembling nano-engineered carbon electrodes, prepared in porous templates, with morphology of interconnected arrays of complex shapes and porosity. The highly textured graphitic films act as electrode and current collector and integrated with solid polymer electrolyte, function as thin film supercapacitors. The nanostructured electrode morphology and the conformal electrolyte packaging provide enough energy and power density for the devices in addition to excellent mechanical flexibility and optical transparency, making it a unique design in various power delivery applications.
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Project description:Flexible transparent conductors are an enabling component for large-area flexible displays, wearable electronics, and implantable medical sensors that can wrap around and move with the body. However, conventional conductive materials decay quickly under tensile strain, posing a significant hurdle for functional flexible devices. Here, we show that high electrical conductivity, mechanical stretchability, and optical transparency can be simultaneously attained by compositing long metallic double-walled carbon nanotubes with a polydimethylsiloxane substrate. When stretched to 100% tensile strain, thin films incorporating these long nanotubes (≈3.2 µm on average) achieve a record high conductivity of 3316 S cm-1 at 100% tensile strain and 85% optical transmittance, which is 194 times higher than that of short nanotube controls (≈0.8 µm on average). Moreover, the high conductivity can withstand more than 1000 repeated stretch-release cycles (switching between 100% and 0% strain) with a retention approaching 96%, whereas the short nanotube controls exhibit only 10%. Mechanistic studies reveal that long tubes can bridge the microscale gaps generated during stretching, thereby maintaining high electrical conductivity. When mounted on human joints, this elastic transparent conductor can accommodate large motions to provide stable, high current output. These results point to transparent conductors capable of attaining high electrical conductivity and optical transmittance under mechanical strain to allow large shape changes that may take place in the operation and use of flexible electronics.
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Project description:Single-wall carbon nanotubes (SWCNTs) are ideal for fabricating transparent conductive films because of their small diameter, good optical and electrical properties, and excellent flexibility. However, a high intertube Schottky junction resistance, together with the existence of aggregated bundles of SWCNTs, leads to a degraded optoelectronic performance of the films. We report a network of isolated SWCNTs prepared by an injection floating catalyst chemical vapor deposition method, in which crossed SWCNTs are welded together by graphitic carbon. Pristine SWCNT films show a record low sheet resistance of 41 ohm ?-1 at 90% transmittance for 550-nm light. After HNO3 treatment, the sheet resistance further decreases to 25 ohm ?-1. Organic light-emitting diodes using this SWCNT film as anodes demonstrate a low turn-on voltage of 2.5 V, a high current efficiency of 75 cd A-1, and excellent flexibility. Investigation of isolated SWCNT-based field-effect transistors shows that the carbon-welded joints convert the Schottky contacts between metallic and semiconducting SWCNTs into near-ohmic ones, which significantly improves the conductivity of the transparent SWCNT network. Our work provides a new avenue of assembling individual SWCNTs into macroscopic thin films, which demonstrate great potential for use as transparent electrodes in various flexible electronics.
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Project description:In the race to find novel transparent conductors for next-generation optoelectronic devices, graphene is supposed to be one of the leading candidates, as it has the potential to satisfy all future requirements. However, the use of graphene as a truly transparent conductor remains a great challenge because its lowest sheet resistance demonstrated so far exceeds that of the commercially available indium tin oxide. The possible cause of low conductivity lies in its intrinsic growth process, which requires further exploration. In this work, I have approached this problem by controlling graphene nucleation during the chemical vapor deposition process as well as by adopting three distinct procedures, including bis(trifluoromethanesulfonyl)amide doping, post annealing, and flattening of graphene films. Additionally, van der Waals stacked graphene layers have been prepared to reduce the sheet resistance effectively. I have demonstrated an efficient and flexible transparent conductor with the extremely low sheet resistance of 40 Ω sq-1, high transparency (T r ∼90%), and high mechanical flexibility, making it suitable for electrode materials in future optoelectronic devices.
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