Ontology highlight
ABSTRACT:
SUBMITTER: Lim D
PROVIDER: S-EPMC5622113 | biostudies-other | 2017 Sep
REPOSITORIES: biostudies-other
Lim Doohyeok D Kim Minsuk M Kim Yoonjoong Y Kim Sangsig S
Scientific reports 20170929 1
In this study, we demonstrate the static random access memory (SRAM) characteristics generated by weak impact ionization in bendable field-effect transistors (FETs) with n<sup>+</sup>-p-n<sup>+</sup> silicon nanowire (SiNW) channels. Our bendable SiNW FETs show not only superior switching characteristics such as an on/off current ratio of ~10<sup>5</sup> and steep subthreshold swing (~5 mV/dec) but also reliable SRAM characteristics. The SRAM characteristics originate from the positive feedback ...[more]