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Formation of Two-dimensional Electron Gas at Amorphous/Crystalline Oxide Interfaces.


ABSTRACT: Experimentally, we found the percentage of low valence cations, the ionization energy of cations in film, and the band gap of substrates to be decisive for the formation of two-dimensional electron gas at the interface of amorphous/crystalline oxide (a-2DEG). Considering these findings, we inferred that the charge transfer from the film to the interface should be the main mechanism of a-2DEG formation. This charge transfer is induced by oxygen defects in film and can be eliminated by the electron-absorbing process of cations in the film. Based on this, we propose a simple dipole model that successfully explains the origin of a-2DEG, our experimental findings, and some important properties of a-2DEG.

SUBMITTER: Li C 

PROVIDER: S-EPMC5762893 | biostudies-other | 2018 Jan

REPOSITORIES: biostudies-other

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Formation of Two-dimensional Electron Gas at Amorphous/Crystalline Oxide Interfaces.

Li ChengJian C   Hong YanPeng Y   Xue HongXia H   Wang XinXin X   Li Yongchun Y   Liu Kejian K   Jiang Weimin W   Liu Mingrui M   He Lin L   Dou RuiFen R   Xiong ChangMin C   Nie JiaCai J  

Scientific reports 20180110 1


Experimentally, we found the percentage of low valence cations, the ionization energy of cations in film, and the band gap of substrates to be decisive for the formation of two-dimensional electron gas at the interface of amorphous/crystalline oxide (a-2DEG). Considering these findings, we inferred that the charge transfer from the film to the interface should be the main mechanism of a-2DEG formation. This charge transfer is induced by oxygen defects in film and can be eliminated by the electro  ...[more]

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