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Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors.

ABSTRACT: High performance p-type thin-film transistor (p-TFT) was realized by a simple process of reactive sputtering from a tin (Sn) target under oxygen ambient, where remarkably high field-effect mobility (? FE ) of 7.6?cm2/Vs, 140?mV/dec subthreshold slope, and 3?×?104 on-current/off-current were measured. In sharp contrast, the SnO formed by direct sputtering from a SnO target showed much degraded ? FE , because of the limited low process temperature of SnO and sputtering damage. From the first principle quantum-mechanical calculation, the high hole ? FE of SnO p-TFT is due to its considerably unique merit of the small effective mass and single hole band without the heavy hole band. The high performance p-TFTs are the enabling technology for future ultra-low-power complementary-logic circuits on display and three-dimensional brain-mimicking integrated circuits.

SUBMITTER: Shih CW

PROVIDER: S-EPMC5772488 | biostudies-other | 2018 Jan

REPOSITORIES: biostudies-other

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Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors.

Shih Cheng Wei CW Chin Albert A Lu Chun Fu CF Su Wei Fang WF

Scientific reports 20180117 1

High performance p-type thin-film transistor (p-TFT) was realized by a simple process of reactive sputtering from a tin (Sn) target under oxygen ambient, where remarkably high field-effect mobility (μ FE ) of 7.6 cm2/Vs, 140 mV/dec subthreshold slope, and 3 × 104 on-current/off-current were measured. In sharp contrast, the SnO formed by direct sputtering from a SnO target showed much degraded μ FE , because of the limited low process temperature of SnO ...[more]

PMID: 29343726

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