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Thin film transfer for the fabrication of tantalum nitride photoelectrodes with controllable layered structures for water splitting.


ABSTRACT: The fabrication of semiconductor films on conductive substrates is vital to the production of high-performance electrodes for photoelectrochemical (PEC) water splitting. In this work, a thin film transfer method was developed to produce Ta3N5 film photoanodes for PEC water oxidation. Phase-pure Ta3N5 thin films were formed on inert Si substrates via magnetron sputtering of Ta films, followed by oxidation and subsequent nitridation in a flow of gaseous NH3. The resulting porous Ta3N5 films were uniformly transferred from the Si substrates using metallic layers that allowed ohmic contact at the Ta3N5 film/metal interface. This film transfer method enables control over the film thicknesses and layered structures of the Ta3N5 photoanodes. Following modification with a Co(OH) x layer acting as an oxygen-evolution catalyst, a Ta3N5 photoanode with a NbN x interlayer exhibited a photocurrent of 3.5 mA cm-2 at 1.23 V vs. RHE under a simulated AM 1.5G light, a value 1.7 times that generated by a photoanode without interlayers. The present film transfer method is potentially applicable to the development of semiconductor thin films for efficient PEC energy conversion.

SUBMITTER: Wang C 

PROVIDER: S-EPMC6021777 | biostudies-other | 2016 Sep

REPOSITORIES: biostudies-other

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Thin film transfer for the fabrication of tantalum nitride photoelectrodes with controllable layered structures for water splitting.

Wang Chizhong C   Hisatomi Takashi T   Minegishi Tsutomu T   Nakabayashi Mamiko M   Shibata Naoya N   Katayama Masao M   Domen Kazunari K  

Chemical science 20160525 9


The fabrication of semiconductor films on conductive substrates is vital to the production of high-performance electrodes for photoelectrochemical (PEC) water splitting. In this work, a thin film transfer method was developed to produce Ta<sub>3</sub>N<sub>5</sub> film photoanodes for PEC water oxidation. Phase-pure Ta<sub>3</sub>N<sub>5</sub> thin films were formed on inert Si substrates <i>via</i> magnetron sputtering of Ta films, followed by oxidation and subsequent nitridation in a flow of g  ...[more]

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