Dataset Information

Research and Analysis of MEMS Switches in Different Frequency Bands.

ABSTRACT: Due to their high isolation, low insertion loss, high linearity, and low power consumption, microelectromechanical systems (MEMS) switches have drawn much attention from researchers in recent years. In this paper, we introduce the research status of MEMS switches in different bands and several reliability issues, such as dielectric charging, contact failure, and temperature instability. In this paper, some of the following methods to improve the performance of MEMS switches in high frequency are summarized: (1) utilizing combinations of several switches in series; (2) covering a float metal layer on the dielectric layer; (3) using dielectric layer materials with high dielectric constants and conductor materials with low resistance; (4) developing MEMS switches using T-match and ?-match; (5) designing MEMS switches based on bipolar complementary metal?oxide?semiconductor (BiCMOS) technology and reconfigurable MEMS' surfaces; (6) employing thermal compensation structures, circularly symmetric structures, thermal buckle-beam actuators, molybdenum membrane, and thin-film packaging; (7) selecting Ultra-NanoCrystalline diamond or aluminum nitride dielectric materials and applying a bipolar driving voltage, stoppers, and a double-dielectric-layer structure; and (8) adopting gold alloying with carbon nanotubes (CNTs), hermetic and reliable packaging, and mN-level contact.

SUBMITTER: Tian W

PROVIDER: S-EPMC6187745 | biostudies-other | 2018 Apr

REPOSITORIES: biostudies-other

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Research and Analysis of MEMS Switches in Different Frequency Bands.

Tian Wenchao W Li Ping P Yuan LinXiao L

Micromachines 20180415 4

Due to their high isolation, low insertion loss, high linearity, and low power consumption, microelectromechanical systems (MEMS) switches have drawn much attention from researchers in recent years. In this paper, we introduce the research status of MEMS switches in different bands and several reliability issues, such as dielectric charging, contact failure, and temperature instability. In this paper, some of the following methods to improve the performance of MEMS switches in high frequency are ...[more]

PMID: 30424118

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Project description:Objective This study was aimed to investigate the characteristics of the amplitude of low-frequency fluctuation (ALFF) at specific frequencies in severe obstructive sleep apnea (OSA) patients. A comparison was made between pre-CPAP treatment and one night after continuous positive airway pressure (CPAP) treatment. Methods 30 severe OSA patients and 19 healthy controls (HC) were recruited. The ALFF method was used to assess the local features of spontaneous brain activity and calculated at different bands (slow-5 and slow-4). A correlation analysis was performed to evaluate the relationship between the changes of the ALFF and polysomnography data. Results Compared with HC, in slow-5 frequency band, OSA patients showed significantly decreased ALFF in the left inferior temporal gyrus, and significantly increased ALFF in the left middle frontal gyrus, left inferior frontal gyrus, triangular part, right superior frontal gyrus, dorsolateral and right middle temporal gyrus. In slow-4 frequency, there was significantly decreased ALFF in the right inferior temporal gyrus, and significantly increased ALFF in the left precuneus, right posterior cingulate gyrus and right median cingulate besides the slow-5 difference band showed. Compared with pre-CPAP, we found that after CPAP treatment, ALFF signals in the left insula in slow-5 and left caudate in slow-4 increased, but the calcarine in slow-4 significantly reduced. Correlation analysis showed that the left angular slow-4 band change was positively correlated with the slow wave sleep change (r = 0.4933, p = 0.0056). The left cerebellum 6 slow-5 band change was positively correlated with the duration of the REM sleep change (r = 0.4563, p = 0.0113), and the left cerebellum 6 slow-4 band change was also positively correlated with the mean blood oxygen change in the REM (r = 0.4591, p = 0.0107) and NREM sleep (r = 0.4492, p = 0.0128). Conclusion We found that the use of slow-4 was more specific in OSA studies. These results suggested that the severe OSA patients have frequency-related abnormal spontaneous neural activity, which may contribute to a better understanding of the pathological basis of OSA-related diseases and provide a potential therapeutic target for OSA patients.

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Research and Analysis of MEMS Switches in Different Frequency Bands.

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Research and Analysis of MEMS Switches in Different Frequency Bands.

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