Dataset Information

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/?-Ga2O3 ([Formula: see text]) Heterojunctions.

ABSTRACT: The energy band alignment of ZnO/?-Ga2O3 ([Formula: see text]) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I band alignment was identified for all the ZnO/?-Ga2O3 heterojunctions. The conduction (valence) band offset varied from 1.26 (0.20) eV to 1.47 (0.01) eV with the growth temperature increasing from 150 to 250 °C. The increased conduction band offset with temperature is mainly contributed by Zn interstitials in ZnO film. In the meanwhile, the acceptor-type complex defect Vzn?+?OH could account for the reduced valence band offset. These findings will facilitate the design and physical analysis of ZnO/?-Ga2O3 relevant electronic devices.

SUBMITTER: Sun SM

PROVIDER: S-EPMC6305258 | biostudies-other | 2018 Dec

REPOSITORIES: biostudies-other

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Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ([Formula: see text]) Heterojunctions.

Sun Shun-Ming SM Liu Wen-Jun WJ Xiao Yi-Fan YF Huan Ya-Wei YW Liu Hao H Ding Shi-Jin SJ Zhang David Wei DW

Nanoscale research letters 20181224 1

The energy band alignment of ZnO/β-Ga2O3 ([Formula: see text]) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures. A type-I band alignment was identified for all the ZnO/β-Ga2O3 heterojunctions. The conduction (valence) band offset varied from 1.26 (0.20) eV to 1.47 (0.01) eV with the growth temperature increasing from 150 to 250 °C. The increased ...[more]

PMID: 30584649

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Dataset Information

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/?-Ga2O3 ([Formula: see text]) Heterojunctions.

Publications

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga<sub>2</sub>O<sub>3</sub> ([Formula: see text]) Heterojunctions.

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