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Synthesis, Giant Dielectric, and Pyroelectric Response of [001]-Oriented Pr3+ Doped Pb(Mg1/3Nb2/3)O?-PbTiO? Ferroelectric Nano-Films Grown on Si Substrates.

ABSTRACT: The [001]-oriented Pr3+ doped Pb(Mg1/3Nb2/3)O?-0.30PbTiO? (Pr-PMN-PT) thin films with a composition near the morphotropic phase boundary (MPB) were synthesized by a sol?gel method. The crystal structure was characterized using X-ray diffraction. It was found that a single perovskite phase was achieved in Pr-PMN-PT thin films annealed at 650 °C for 3 min. The dielectric constant (?r) value was 2400 in 2.5% Pr-PMN-PT thin films at room temperature, 110% higher than that of pure PMN-PT samples. Through 2.5% Pr3+ doping, remanent polarization (Pr) and coercive field (Ec) values increased from 11.5 ?C/cm² and 35 kV/cm to 17.3 ?C/cm² and 63.5 kV/cm, respectively, in PMN-PT thin films. The leakage current densities of pure and 2.5% Pr-PMN-PT thin films were on the order of 1.24 × 10-4 A/cm² and 5.8 × 10-5 A/cm², respectively, at 100 kV/cm. A high pyroelectric coefficient (py) with a value of 167 ?C/m²K was obtained in 2.5% Pr-PMN-PT thin films on Si substrate, which makes this material suitable for application in infrared detectors.

SUBMITTER: Cai C 

PROVIDER: S-EPMC6316953 | biostudies-other | 2018 Nov

REPOSITORIES: biostudies-other

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Synthesis, Giant Dielectric, and Pyroelectric Response of [001]-Oriented Pr<sup>3+</sup> Doped Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O₃-PbTiO₃ Ferroelectric Nano-Films Grown on Si Substrates.

Cai Changlong C   Zhang Deqiang D   Liu Weiguo W   Wang Jun J   Zhou Shun S   Su Yongming Y   Sun Xueping X   Lin Dabin D  

Materials (Basel, Switzerland) 20181128 12

The [001]-oriented Pr<sup>3+</sup> doped Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O₃-0.30PbTiO₃ (Pr-PMN-PT) thin films with a composition near the morphotropic phase boundary (MPB) were synthesized by a sol⁻gel method. The crystal structure was characterized using X-ray diffraction. It was found that a single perovskite phase was achieved in Pr-PMN-PT thin films annealed at 650 °C for 3 min. The dielectric constant (<i>ε</i><sub>r</sub>) value was 2400 in 2.5% Pr-PMN-PT thin films at room temperature  ...[more]

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