Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors.

ABSTRACT: We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension of Natori's model and includes transmission probability and drain-channel coupling parameter. The latter parameter gives rise to a theoretical RON that is significantly larger than those predicted previously. To validate our model, we fabricated n-channel MOSFETs with varying channel lengths. We show the length dependence of these parameters to support a quasi-ballistic description of our devices.

SUBMITTER: Lee JU 

PROVIDER: S-EPMC6346087 | biostudies-other | 2019 Jan

REPOSITORIES: biostudies-other