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Scaling growth rates for perovskite oxide virtual substrates on silicon.

ABSTRACT: The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO3 exceeding 600 nm hr-1. This tenfold increase in growth rate compared to SrTiO3 grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.

SUBMITTER: Lapano J

PROVIDER: S-EPMC6549169 | biostudies-other | 2019 Jun

REPOSITORIES: biostudies-other

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Scaling growth rates for perovskite oxide virtual substrates on silicon.

Lapano Jason J Brahlek Matthew M Zhang Lei L Roth Joseph J Pogrebnyakov Alexej A Engel-Herbert Roman R

Nature communications 20190605 1

The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO<sub>3</sub> excee ...[more]

PMID: 31165726

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