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Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon.

ABSTRACT: Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using industry-standard silicon technology. The first gate confines a hole quantum dot encoding the spin qubit, the second one a helper dot enabling readout. The qubit state is measured through the phase response of a lumped-element resonator to spin-selective interdot tunneling. The demonstrated qubit readout scheme requires no coupling to a Fermi reservoir, thereby offering a compact and potentially scalable solution whose operation may be extended above 1 K.

SUBMITTER: Crippa A 

PROVIDER: S-EPMC6610084 | biostudies-other | 2019 Jul

REPOSITORIES: biostudies-other

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Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon.

Crippa A A   Ezzouch R R   Aprá A A   Amisse A A   Laviéville R R   Hutin L L   Bertrand B B   Vinet M M   Urdampilleta M M   Meunier T T   Sanquer M M   Jehl X X   Maurand R R   De Franceschi S S  

Nature communications 20190703 1

Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using industry-standard silicon technology. The first gate confines a hole quantum dot encoding the spin qu  ...[more]