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Asymmetric two-dimensional ferroelectric transistor with anti-ambipolar transport characteristics

ABSTRACT: Two-dimensional (2D) ferroelectric transistors hold unique properties and positions, especially talking about low-power memories, in-memory computing, and multifunctional logic devices. To achieve better functions, appropriate design of new device structures and material combinations is necessary. We present an asymmetric 2D heterostructure integrating MoTe2, h-BN, and CuInP2S6 as a ferroelectric transistor, which exhibits an unusual property of anti-ambipolar transport characteristic under both positive and negative drain biases. Our results demonstrate that the anti-ambipolar behavior can be modulated by external electric field, achieving a peak-to-valley ratio up to 103. We also provide a comprehensive explanation for the occurrence and modulation of the anti-ambipolar peak based on a model describing linked lateral-and-vertical charge behaviors. Our findings provide insights for designing and constructing anti-ambipolar transistors and other 2D devices with significant potential for future applications.

Supplementary Information

The online version contains supplementary material available at 10.1186/s11671-023-03860-2.

SUBMITTER: Zhao Y

PROVIDER: S-EPMC10244305 | biostudies-literature | 2023 Jun

REPOSITORIES: biostudies-literature

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