Browse
Submit Data
Databases
API
Help

Dataset Information

26 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Diameter-dependent dopant location in silicon and germanium nanowires.

ABSTRACT: We report studies defining the diameter-dependent location of electrically active dopants in silicon (Si) and germanium (Ge) nanowires (NWs) prepared by nanocluster catalyzed vapor-liquid-solid (VLS) growth without measurable competing homogeneous decomposition and surface overcoating. The location of active dopants was assessed from electrical transport measurements before and after removal of controlled thicknesses of material from NW surfaces by low-temperature chemical oxidation and etching. These measurements show a well-defined transition from bulk-like to surface doping as the diameter is decreased <22-25 nm for n- and p-type Si NWs, although the surface dopant concentration is also enriched in the larger diameter Si NWs. Similar diameter-dependent results were also observed for n-type Ge NWs, suggesting that surface dopant segregation may be general for small diameter NWs synthesized by the VLS approach. Natural surface doping of small diameter semiconductor NWs is distinct from many top-down fabricated NWs, explains enhanced transport properties of these NWs and could yield robust properties in ultrasmall devices often dominated by random dopant fluctuations.

SUBMITTER: Xie P

PROVIDER: S-EPMC2730964 | biostudies-literature |

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires.

Project description:The dependence of the resistivity with changing diameter of heavily-doped self-seeded germanium nanowires was studied for the diameter range 40 to 11 nm. The experimental data reveal an initial strong reduction of the resistivity with diameter decrease. At about 20 nm a region of slowly varying resistivity emerges with a peak feature around 14 nm. For diameters above 20 nm, nanowires were found to be describable by classical means. For smaller diameters a quantum-based approach was required where we employed the 1D Kubo-Greenwood framework and also revealed the dominant charge carriers to be heavy holes. For both regimes the theoretical results and experimental data agree qualitatively well assuming a spatial spreading of the free holes towards the nanowire centre upon diameter reduction.

| S-EPMC5082314 | biostudies-literature

Direct Synthesis of Hyperdoped Germanium Nanowires.

Project description:A low-temperature chemical vapor growth of Ge nanowires using Ga as seed material is demonstrated. The structural and chemical analysis reveals the homogeneous incorporation of ?3.5 at. % Ga in the Ge nanowires. The Ga-containing Ge nanowires behave like metallic conductors with a resistivity of about ?300 ??cm due to Ga hyperdoping with electronic contributions of one-third of the incorporated Ga atoms. This is the highest conduction value observed by in situ doping of group IV nanowires reported to date. This work demonstrates that Ga is both an efficient seed material at low temperatures for Ge nanowire growth and an effective dopant changing the semiconductor into a metal-like conductor.

| S-EPMC5830687 | biostudies-literature

A vertical silicon-graphene-germanium transistor.

Project description:Graphene-base transistors have been proposed for high-frequency applications because of the negligible base transit time induced by the atomic thickness of graphene. However, generally used tunnel emitters suffer from high emitter potential-barrier-height which limits the transistor performance towards terahertz operation. To overcome this issue, a graphene-base heterojunction transistor has been proposed theoretically where the graphene base is sandwiched by silicon layers. Here we demonstrate a vertical silicon-graphene-germanium transistor where a Schottky emitter constructed by single-crystal silicon and single-layer graphene is achieved. Such Schottky emitter shows a current of 692?A?cm-2 and a capacitance of 41 nF cm-2, and thus the alpha cut-off frequency of the transistor is expected to increase from about 1?MHz by using the previous tunnel emitters to above 1?GHz by using the current Schottky emitter. With further engineering, the semiconductor-graphene-semiconductor transistor is expected to be one of the most promising devices for ultra-high frequency operation.

| S-EPMC6814790 | biostudies-literature

Promoting cell proliferation using water dispersible germanium nanowires.

Project description:Group IV Nanowires have strong potential for several biomedical applications. However, to date their use remains limited because many are synthesised using heavy metal seeds and functionalised using organic ligands to make the materials water dispersible. This can result in unpredicted toxic side effects for mammalian cells cultured on the wires. Here, we describe an approach to make seedless and ligand free Germanium nanowires water dispersible using glutamic acid, a natural occurring amino acid that alleviates the environmental and health hazards associated with traditional functionalisation materials. We analysed the treated material extensively using Transmission electron microscopy (TEM), High resolution-TEM, and scanning electron microscope (SEM). Using a series of state of the art biochemical and morphological assays, together with a series of complimentary and synergistic cellular and molecular approaches, we show that the water dispersible germanium nanowires are non-toxic and are biocompatible. We monitored the behaviour of the cells growing on the treated germanium nanowires using a real time impedance based platform (xCELLigence) which revealed that the treated germanium nanowires promote cell adhesion and cell proliferation which we believe is as a result of the presence of an etched surface giving rise to a collagen like structure and an oxide layer. Furthermore this study is the first to evaluate the associated effect of Germanium nanowires on mammalian cells. Our studies highlight the potential use of water dispersible Germanium Nanowires in biological platforms that encourage anchorage-dependent cell growth.

| S-EPMC4169628 | biostudies-literature

Selection and Functionalization of Germanium Nanowires for Bio-Sensing.

Project description:In this paper, we investigate the use of dielectrophoresis to align germanium nanowire arrays to realize nanowire-based diodes and their subsequent use for bio-sensing. After establishing that dielectrophoresis is a controllable and repeatable fabrication method to create devices from germanium nanowires, we use the optimum process conditions to form a series of diodes. These are subsequently functionalized with an aptamer, which is able to bind specifically to the spike protein of SARS-Cov2 and investigated as a potential sensor. We observe a linear increase in the source to drain current as the concentration of spike protein is increased from 100 fM/L to 1 nM/L.

| S-EPMC9535719 | biostudies-literature

Easy Diameter Tuning of Silicon Nanowires with Low-Cost SnO<sub>2</sub>-Catalyzed Growth for Lithium-Ion Batteries.

Project description:Silicon nanowires are appealing structures to enhance the capacity of anodes in lithium-ion batteries. However, to attain industrial relevance, their synthesis requires a reduced cost. An important part of the cost is devoted to the silicon growth catalyst, usually gold. Here, we replace gold with tin, introduced as low-cost tin oxide nanoparticles, to produce a graphite-silicon nanowire composite as a long-standing anode active material. It is equally important to control the silicon size, as this determines the rate of decay of the anode performance. In this work, we demonstrate how to control the silicon nanowire diameter from 10 to 40 nm by optimizing growth parameters such as the tin loading and the atmosphere in the growth reactor. The best composites, with a rich content of Si close to 30% wt., show a remarkably high initial Coulombic efficiency of 82% for SiNWs 37 nm in diameter.

| S-EPMC9370699 | biostudies-literature

Time-resolved single dopant charge dynamics in silicon.

Project description:As the ultimate miniaturization of semiconductor devices approaches, it is imperative that the effects of single dopants be clarified. Beyond providing insight into functions and limitations of conventional devices, such information enables identification of new device concepts. Investigating single dopants requires sub-nanometre spatial resolution, making scanning tunnelling microscopy an ideal tool. However, dopant dynamics involve processes occurring at nanosecond timescales, posing a significant challenge to experiment. Here we use time-resolved scanning tunnelling microscopy and spectroscopy to probe and study transport through a dangling bond on silicon before the system relaxes or adjusts to accommodate an applied electric field. Atomically resolved, electronic pump-probe scanning tunnelling microscopy permits unprecedented, quantitative measurement of time-resolved single dopant ionization dynamics. Tunnelling through the surface dangling bond makes measurement of a signal that would otherwise be too weak to detect feasible. Distinct ionization and neutralization rates of a single dopant are measured and the physical process controlling those are identified.

| S-EPMC5095180 | biostudies-literature

Solution synthesis of germanium nanowires using a Ge2+ alkoxide precursor.

Project description:A simple solution synthesis of germanium (Ge0) nanowires under mild conditions (<400 degrees C and 1 atm) was demonstrated using germanium 2,6-dibutylphenoxide, Ge(DBP)2 (1), as the precursor where DBP = 2,6-OC6H3(C(CH3)3)2. Compound 1, synthesized from Ge(NR2)2 where R = SiMe3 and 2 equiv of DBP-H, was characterized as a mononuclear species by single-crystal X-ray diffraction. Dissolution of 1 in oleylamine, followed by rapid injection into a 1-octadecene solution heated to 300 degrees C under an atmosphere of Ar, led to the formation of Ge0 nanowires. The Ge0 nanowires were characterized by transmission electron microscopy (TEM), X-ray diffraction analysis, and Fourier transform infrared spectroscopy. These characterizations revealed that the nanowires are single crystalline in the cubic phase and coated with oleylamine surfactant. We also observed that the nanowire length (0.1-10 microm) increases with increasing temperature (285-315 degrees C) and time (5-60 min). Two growth mechanisms are proposed based on the TEM images intermittently taken during the growth process as a function of time: (1) self-seeding mechanism where one of two overlapping nanowires serves as a seed, while the other continues to grow as a wire; and (2) self-assembly mechanism where an aggregate of small rods (<50 nm in diameter) recrystallizes on the tip of a longer wire, extending its length.

| S-EPMC2538547 | biostudies-literature

Low-threshold optically pumped lasing in highly strained germanium nanowires.

Project description:The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to date exhibit impractically high thresholds owing to their unfavourable bandstructures. Highly strained germanium with its fundamentally altered bandstructure has emerged as a potential low-threshold gain medium, but there has yet to be a successful demonstration of lasing from this seemingly promising material system. Here we demonstrate a low-threshold, compact group IV laser that employs a germanium nanowire under a 1.6% uniaxial tensile strain as the gain medium. The amplified material gain in strained germanium can sufficiently overcome optical losses at 83?K, thus allowing the observation of multimode lasing with an optical pumping threshold density of ~3.0?kW?cm-2. Our demonstration opens new possibilities for group IV lasers for photonic-integrated circuits.

| S-EPMC5705600 | biostudies-literature

Diameter Dependence of Planar Defects in InP Nanowires.

Project description:In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10?nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of "bottom-up" InP NWs with minimized defect concentration which are suitable for various device applications.

| S-EPMC5018732 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data