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Compound semiconductor nanotube materials grown and fabricated.

ABSTRACT: A new GaAs/InGaAs/InGaP compound semiconductor nanotube material structure was designed and fabricated in this work. A thin, InGaAs-strained material layer was designed in the nanotube structure, which can directionally roll up a strained heterostructure through a normal wet etching process. The compound semiconductor nanotube structure was grown by gas-source molecular beam epitaxy. A good crystalline quality of InGaP, InGaAs, and GaAs materials was obtained through optimizing the growth condition. The fabricated GaAs/InGaAs/InGaP semiconductor nanotubes, with a diameter of 300 to 350 nm and a length of 1.8 to 2.0 ?m, were achieved through normal device fabrication.

SUBMITTER: Ai L

PROVIDER: S-EPMC3254589 | biostudies-literature | 2011 Dec

REPOSITORIES: biostudies-literature

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Compound semiconductor nanotube materials grown and fabricated.

Ai Likun L Xu Anhuai A Teng Teng T Niu Jiebin J Sun Hao H Qi Ming M

Nanoscale research letters 20111212 1

A new GaAs/InGaAs/InGaP compound semiconductor nanotube material structure was designed and fabricated in this work. A thin, InGaAs-strained material layer was designed in the nanotube structure, which can directionally roll up a strained heterostructure through a normal wet etching process. The compound semiconductor nanotube structure was grown by gas-source molecular beam epitaxy. A good crystalline quality of InGaP, InGaAs, and GaAs materials was obtained through optimizing the growth condit ...[more]

PMID: 22152046

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