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Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials.


ABSTRACT: The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. Phase-change materials are highly promising in this respect. However, their contradictory speed and stability properties present a key challenge towards this ambition. We reveal that as the device size decreases, the phase-change mechanism changes from the material inherent crystallization mechanism (either nucleation- or growth-dominated), to the hetero-crystallization mechanism, which resulted in a significant increase in PCRAM speeds. Reducing the grain size can further increase the speed of phase-change. Such grain size effect on speed becomes increasingly significant at smaller device sizes. Together with the nano-thermal and electrical effects, fast phase-change, good stability and high endurance can be achieved. These findings lead to a feasible solution to achieve a universal memory.

SUBMITTER: Wang W 

PROVIDER: S-EPMC3324128 | biostudies-literature | 2012

REPOSITORIES: biostudies-literature

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Enabling universal memory by overcoming the contradictory speed and stability nature of phase-change materials.

Wang Weijie W   Loke Desmond D   Shi Luping L   Zhao Rong R   Yang Hongxin H   Law Leong-Tat LT   Ng Lung-Tat LT   Lim Kian-Guan KG   Yeo Yee-Chia YC   Chong Tow-Chong TC   Lacaita Andrea L AL  

Scientific reports 20120411


The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. Phase-change materials are highly promising in this respect. However, their contradictory speed and stability properties present a key challenge towards this ambition. We reveal that as the device size decreases, the phase-change mechanism changes from the material inherent crystallization mechanism (either nucleation- or gr  ...[more]

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