Dataset Information

Terahertz multi-level nonvolatile optically rewritable encryption memory based on chalcogenide phase-change materials.

ABSTRACT: Fast and efficient information processing and encryption, including writing, reading, and encryption memory, is essential for upcoming terahertz (THz) communications and information encryption. Here, we demonstrate a THz multi-level, nonvolatile, optically rewritable memory and encryption memory based on chalcogenide phase-change materials, Ge₂Sb₂Te₅ (GST). By tuning the laser fluence irradiated on GST, we experimentally achieve multiple intermediate states and large-area amorphization with a diameter of centimeter-level in the THz regime. Our memory unit features a high operating speed of up to 4 ns, excellent reproducibility, and long-term stability. Utilizing this approach, hexadecimal coding information memories are implemented, and multiple writing-erasing tests are successfully carried out in the same active area. Finally, terahertz photoprint memory is demonstrated, verifying the feasibility of lithography-free devices. The demonstration suggests a practical way to protect and store information and paves a new avenue toward nonvolatile active THz devices.

SUBMITTER: Zhang S

PROVIDER: S-EPMC9391584 | biostudies-literature | 2022 Aug

REPOSITORIES: biostudies-literature

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Terahertz multi-level nonvolatile optically rewritable encryption memory based on chalcogenide phase-change materials.

Zhang Shoujun S Chen Xieyu X Liu Kuan K Li Haiyang H Lang Yuanhao Y Han Jie J Wang Qingwei Q Lu Yongchang Y Dai Jianming J Cao Tun T Tian Zhen Z

iScience 20220802 8

Fast and efficient information processing and encryption, including writing, reading, and encryption memory, is essential for upcoming terahertz (THz) communications and information encryption. Here, we demonstrate a THz multi-level, nonvolatile, optically rewritable memory and encryption memory based on chalcogenide phase-change materials, Ge2Sb2Te5 (GST). By tuning the laser fluence irradiated on GST, we experimentally achieve multiple intermediate states and l ...[more]

PMID: 35996583

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Project description:Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices.

Dataset Information

Terahertz multi-level nonvolatile optically rewritable encryption memory based on chalcogenide phase-change materials.

Publications

Terahertz multi-level nonvolatile optically rewritable encryption memory based on chalcogenide phase-change materials.

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