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Electronic structure modulation for low-power switching.

ABSTRACT: We report the transport characteristics of a novel transistor based on the electronic structure modulation of the channel. The gate voltage-controlled current modulation arises from the bandwidth manipulation of a midgap or a near-midgap state. We show that the transistor exhibits a gain and overcomes the 2.3 kBT/decade thermal limit in the inverse subthreshold slope where kB is the Boltzmann constant. The unique device physics also opens up many novel applications.

SUBMITTER: Raza H

PROVIDER: S-EPMC3606601 | biostudies-literature | 2013 Feb

REPOSITORIES: biostudies-literature

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Electronic structure modulation for low-power switching.

Raza Hassan H

Nanoscale research letters 20130213 1

We report the transport characteristics of a novel transistor based on the electronic structure modulation of the channel. The gate voltage-controlled current modulation arises from the bandwidth manipulation of a midgap or a near-midgap state. We show that the transistor exhibits a gain and overcomes the 2.3 kBT/decade thermal limit in the inverse subthreshold slope where kB is the Boltzmann constant. The unique device physics also opens up many novel applications. ...[more]

PMID: 23406380

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