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Ultrafast synaptic events in a chalcogenide memristor.

ABSTRACT: Compact and power-efficient plastic electronic synapses are of fundamental importance to overcoming the bottlenecks of developing a neuromorphic chip. Memristor is a strong contender among the various electronic synapses in existence today. However, the speeds of synaptic events are relatively slow in most attempts at emulating synapses due to the material-related mechanism. Here we revealed the intrinsic memristance of stoichiometric crystalline Ge2Sb2Te5 that originates from the charge trapping and releasing by the defects. The device resistance states, representing synaptic weights, were precisely modulated by 30 ns potentiating/depressing electrical pulses. We demonstrated four spike-timing-dependent plasticity (STDP) forms by applying programmed pre- and postsynaptic spiking pulse pairs in different time windows ranging from 50 ms down to 500 ns, the latter of which is 10(5) times faster than the speed of STDP in human brain. This study provides new opportunities for building ultrafast neuromorphic computing systems and surpassing Von Neumann architecture.

SUBMITTER: Li Y

PROVIDER: S-EPMC3619133 | biostudies-literature | 2013

REPOSITORIES: biostudies-literature

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Ultrafast synaptic events in a chalcogenide memristor.

Li Yi Y Zhong Yingpeng Y Xu Lei L Zhang Jinjian J Xu Xiaohua X Sun Huajun H Miao Xiangshui X

Scientific reports 20130101

Compact and power-efficient plastic electronic synapses are of fundamental importance to overcoming the bottlenecks of developing a neuromorphic chip. Memristor is a strong contender among the various electronic synapses in existence today. However, the speeds of synaptic events are relatively slow in most attempts at emulating synapses due to the material-related mechanism. Here we revealed the intrinsic memristance of stoichiometric crystalline Ge2Sb2Te5 that originates from the charge trappin ...[more]

PMID: 23563810

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Project description:HighlightsUnique "Janus" interfacial assemble strategy of 2D MXene nanosheets was proposed firstly. Ternary heterostructure consisting of high capacity transitional metal chalcogenide, high conductive 2D MXene and N rich fungal carbonaceous matrix was achieved for larger radius Na/K ions storages. The highly accessible surfaces and interfaces of the strongly coupled 2D based ternary heterostructures provide superb surficial pseudocapacitive storages for both Na and K ions with low energy barriers was verified. Combining with the advantages of two-dimensional (2D) nanomaterials, MXenes have shown great potential in next generation rechargeable batteries. Similar with other 2D materials, MXenes generally suffer severe self-agglomeration, low capacity, and unsatisfied durability, particularly for larger sodium/potassium ions, compromising their practical values. In this work, a novel ternary heterostructure self-assembled from transition metal selenides (MSe, M = Cu, Ni, and Co), MXene nanosheets and N-rich carbonaceous nanoribbons (CNRibs) with ultrafast ion transport properties is designed for sluggish sodium-ion (SIB) and potassium-ion (PIB) batteries. Benefiting from the diverse chemical characteristics, the positively charged MSe anchored onto the electronegative hydroxy (-OH) functionalized MXene surfaces through electrostatic adsorption, while the fungal-derived CNRibs bonded with the other side of MXene through amino bridging and hydrogen bonds. This unique MXene-based heterostructure prevents the restacking of 2D materials, increases the intrinsic conductivity, and most importantly, provides ultrafast interfacial ion transport pathways and extra surficial and interfacial storage sites, and thus, boosts the high-rate storage performances in SIB and PIB applications. Both the quantitatively kinetic analysis and the density functional theory (DFT) calculations revealed that the interfacial ion transport is several orders higher than that of the pristine MXenes, which delivered much enhanced Na+ (536.3 mAh g-1@ 0.1 A g-1) and K+ (305.6 mAh g-1@ 1.0 A g-1 ) storage capabilities and excellent long-term cycling stability. Therefore, this work provides new insights into 2D materials engineering and low-cost, but kinetically sluggish post-Li batteries.

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Ultrafast synaptic events in a chalcogenide memristor.

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Ultrafast synaptic events in a chalcogenide memristor.

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