Browse
Submit Data
Databases
API
Help

Dataset Information

24 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

High performance molybdenum disulfide amorphous silicon heterojunction photodetector.

ABSTRACT: One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate a metal-semiconductor-metal heterojunction photodetector, made of MoS2 and amorphous silicon (a-Si), with rise and fall times of about 0.3 ms. The transient response does not show persistent (residual) photoconductivity, unlike conventional a-Si devices where it may last 3-5 ms, thus making this heterojunction roughly 10X faster. A photoresponsivity of 210 mA/W is measured at green light, the wavelength used in commercial imaging systems, which is 2-4X larger than that of a-Si and best reported MoS2 devices. The device could find applications in large area electronics, such as biomedical imaging, where a fast response is critical.

SUBMITTER: Esmaeili-Rad MR

PROVIDER: S-EPMC3731647 | biostudies-literature | 2013

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

High performance molybdenum disulfide amorphous silicon heterojunction photodetector.

Esmaeili-Rad Mohammad R MR Salahuddin Sayeef S

Scientific reports 20130101

One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate a metal-semiconductor-metal heterojunction photodetector, made of MoS2 and amorphous silicon (a-Si), with rise and fall times of about 0.3 ms. The transient response does not show persistent (residual) photoconductivity, unlike conventional a-Si devices where it may last 3-5 m ...[more]

PMID: 23907598

Similar Datasets

Efficient All-2D Amorphous Cobalt Sulfide Nanosheets/Multilayered Molybdenum Disulfide Hybrid Heterojunction Catalyst for Electrochemical Hydrogen Evolution.

Project description:Hydrogen energy is considered to be a critical environmentally friendly and widely sourced renewable energy source that can be used as an alternative to fossil fuels. At present, the preparation of hydrogen (H2) mainly depends on traditional fossil fuels. In order to achieve sustainable development of environmental protection, great attention has been paid to the preparation of H2 by electrocatalysis, photocatalysis, and photoelectrochemistry. Here, it is reported for the first time that a novel active catalyst for the hydrogen evolution reaction, consisting of all-2D amorphous nanosheets/2D crystal layer heterojunction structure and without any noble metal (no precious metals are present in the preparation or measuring), is almost entirely fabricated by laser ablation in liquid (LAL) growth of amorphous cobalt sulfide on the surface of multilayered molybdenum disulfide. In acidic media, the amorphous cobalt sulfide nanosheets/multilayered molybdenum disulfide (a-CoS/MoS2) catalyst exhibits fast hydrogen evolution kinetics with onset potential of -147 mV and a Tafel slope of 126 mV per decade, which is much better than only the amorphous cobalt sulfide and molybdenum disulfide layer. The high hydrogen evolution activity of the amorphous cobalt sulfide nanosheets/multilayered molybdenum disulfide hybrid is likely due to the unique electrocatalytic synergistic effects between hydrogen evolution-active amorphous cobalt sulfide nanosheets and layered crystal molybdenum disulfide materials, as well as the much-increased catalytic sites. This work provides a new general route based on all-2D amorphous nanosheets/2D crystal structure for designing and preparing novel layered materials with effectively manipulated catalytic properties and active functionality surface.

| S-EPMC7001116 | biostudies-literature

High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction.

Project description:Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications. The use of wide bandgap metal oxide semiconductor materials is of great interest in the development of UV photodetector due to their unique electronic and optical properties. In this work, deep UV photodetector based on NiO/β-Ga2O3 heterojunction was developed and investigated. The β-Ga2O3 layer was prepared by magnetron sputtering and exhibited selective orientation along the family of ([Formula: see text] 01) crystal plane after annealing. The photodetector demonstrated good performance with a high responsivity (R) of 27.43 AW-1 under a 245-nm illumination (27 μWcm-2) and the maximum detectivity (D*) of 3.14 × 1012 cmHz1/2 W-1, which was attributed to the p-NiO/n-β-Ga2O3 heterojunction.

| S-EPMC7036083 | biostudies-literature

Silicon/organic hybrid heterojunction infrared photodetector operating in the telecom regime.

Project description:The authors report on the fabrication of a silicon/organic heterojunction based IR photodetector. It is demonstrated that an Al/p-Si/perylene-derivative/Al heterostructure exhibits a photovoltaic effect up to 2.7 ?m (0.46 eV), a value significantly lower than the bandgap of either material. Although the devices are not optimized, at room temperature a rise time of 300 ns, a responsivity of ?0.2 mA/W with a specific detectivity of D? ? 7 × 107 Jones at 1.55 ?m is found. The achieved responsivity is two orders of magnitude higher compared to our previous efforts [1,2]. It will be outlined that the photocurrent originates from an absorption mechanism involving excitation of an electron from the Si valence band into the extended LUMO state in the perylene-derivative, with possible participation of intermediate localized surface state in the organic material. The non-invasive deposition of the organic interlayer onto the Si results in compatibility with the CMOS process, making the presented approach a potential alternative to all inorganic device concepts.

| S-EPMC4130135 | biostudies-literature

Lateral multilayer/monolayer MoS<sub>2</sub> heterojunction for high performance photodetector applications.

Project description:Inspired by the unique, thickness-dependent energy band structure of 2D materials, we study the electronic and optical properties of the photodetector based on the as-exfoliated lateral multilayer/monolayer MoS2 heterojunction. Good gate-tunable current-rectifying characteristics are observed with a rectification ratio of 103 at V gs?=?10?V, which may offer an evidence on the existence of the heterojunction. Upon illumination from ultraviolet to visible light, the multilayer/monolayer MoS2 heterojunction shows outstanding photodetective performance, with a photoresponsivity of 103?A/W, a photosensitivity of 1.7?×?105 and a detectivity of 7?×?1010 Jones at 470?nm light illumination. Abnormal photoresponse under positive gate voltage is observed and analyzed, which indicates the important role of the heterojunction in the photocurrent generation process. We believe that these results contribute to a better understanding on the fundamental physics of band alignment for multilayer/monolayer MoS2 heterojunction and provide us a feasible solution for novel electronic and optoelectronic devices.

| S-EPMC5495793 | biostudies-literature

High-performance photodetector based on an interface engineering-assisted graphene/silicon Schottky junction.

Project description:Graphene/silicon Schottky junctions have been proven efficient for photodetection, but the existing high dark current seriously restricts applications such as weak signal detection. In this paper, a thin layer of gadolinium iron garnet (Gd3Fe5O12, GdIG) film is introduced to engineer the interface of a graphene/silicon Schottky photodetector. The novel structure shows a significant decrease in dark current by 54 times at a -2 V bias. It also exhibits high performance in a self-powered mode in terms of an Ilight/Idark ratio up to 8.2 × 106 and a specific detectivity of 1.35 × 1013 Jones at 633 nm, showing appealing potential for weak-light detection. Practical suitability characterizations reveal a broadband absorption covering ultraviolet to near-infrared light and a large linear response with a wide range of light intensities. The device holds an operation speed of 0.15 ms, a stable response for 500 continuous working cycles, and long-term environmental stability after several months. Theoretical analysis shows that the interlayer increases the barrier height and passivates the contact surface so that the dark current is suppressed. This work demonstrates the good capacity of GdIG thin films as interlayer materials and provides a new solution for high-performance photodetectors.

| S-EPMC8741776 | biostudies-literature

High-Performance Ultraviolet Photodetector Based on a Zinc Oxide Nanoparticle@Single-Walled Carbon Nanotube Heterojunction Hybrid Film.

Project description:A hybrid film consisting of zinc oxide nanoparticles (ZnO NPs) and carbon nanotubes (CNTs) is formed on a glass substrate using a simple and swift spin coating process for the use in ultraviolet photodetectors (UV PDs). The incorporation of various types of CNTs into ZnO NPs (ZnO@CNT) enhances the performance of UV PDs with respect to sensitivity, photoresponse, and long-term operation stability when compared with pristine ZnO NP films. In particular, the introduction of single-walled CNTs (SWNTs) exhibits a superior performance when compared with the multiwalled CNTs (MWNTs) because SWNTs can not only facilitate the stability of free electrons generated by the O2 desorption on ZnO under UV irradiation owing to the built-in potential between ZnO and SWNT heterojunctions, but also allow facile and efficient transport pathways for electrons through SWNTs with high aspect ratio and low defect density. Furthermore, among the various SWNTs (arc-discharged (A-SWNT), Hipco (H-SWNT), and CoMoCat (C-SWNT) SWNTs), we demonstrate the ZnO@A-SWNT hybrid film exhibits the best performance because of higher conductivity and aspect ratio in A-SWNTs when compared with those of other types of SWNTs. At the optimized conditions for the ZnO@A-SWNT film (ratio of A-SWNTs and ZnO NPs and electrode distance), ZnO@A-SWNT displays a sensitivity of 4.9 × 103 % with an on/off current ratio of ~104 at the bias of 2 V under the UV wavelength of 365 nm (0.47 mW/cm2). In addition, the stability in long-term operation and photoresponse time are significantly improved by the introduction of A-SWNTs into the ZnO NP film when compared with the bare ZnO NPs film.

| S-EPMC7075298 | biostudies-literature

Adhesion and Self-Healing between Monolayer Molybdenum Disulfide and Silicon Oxide.

Project description:The adhesion interactions of two-dimensional (2D) materials are of importance in developing flexible electronic devices due to relatively large surface forces. Here, we investigated the adhesion properties of large-area monolayer MoS2 grown on silicon oxide by using chemical vapor deposition. Fracture mechanics concepts using double cantilever beam configuration were used to characterize the adhesion interaction between MoS2 and silicon oxide. While the interface between MoS2 and silicon oxide was fractured under displacement control, force-displacement response was recorded. The separation energy, adhesion strength and range of the interactions between MoS2 and silicon oxide were characterized by analytical and numerical analyses. In addition to the fundamental adhesion properties of MoS2, we found that MoS2 monolayers on silicon oxide had self-healing properties, meaning that when the separated MoS2 and silicon oxide were brought into contact, the interface healed. The self-healing property of MoS2 is potentially applicable to the development of new composites or devices using 2D materials.

| S-EPMC5677127 | biostudies-literature

High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc <i>p-n</i> Vertical Heterojunction.

Project description:Gallium nitride (GaN) is a superior candidate material for fabricating ultraviolet (UV) photodetectors (PDs) by taking advantage of its attractive wide bandgap (3.4 eV) and stable chemical and physical properties. However, the performance of available GaN-based UV PDs (e.g., in terms of detectivity and sensitivity) still require improvement. Fabricating nanoporous GaN (porous-GaN) structures and constructing organic/inorganic hybrids are two effective ways to improve the performance of PDs. In this study, a novel self-powered UV PD was developed by using p-type cobalt phthalocyanine (CoPc) and n-type porous-GaN (CoPc/porous-GaN) to construct a p-n vertical heterojunction via a thermal vapor deposition method. Under 365 nm 0.009 mWcm-2 light illumination, our device showed a photoresponsivity of 588 mA/W, a detectivity of 4.8 × 1012 Jones, and a linear dynamic range of 79.5 dB, which are better than CoPc- and flat-GaN (CoPc/flat-GaN)-based PDs. The high performance was mainly attributed to the built-in electric field (BEF) generated at the interface of the CoPc film and the nanoporous-GaN, as well as the nanoporous structure of GaN, which allows for a higher absorptivity of light. Furthermore, the device showed excellent stability, as its photoelectrical property and on/off switching behavior remained the same, even after 3 months.

| S-EPMC6780170 | biostudies-literature

Scattering effect of the high-index dielectric nanospheres for high performance hydrogenated amorphous silicon thin-film solar cells.

Project description:Dielectric nanosphere arrays are considered as promising light-trapping designs with the capability of transforming the freely propagated sunlight into guided modes. This kinds of designs are especially beneficial to the ultrathin hydrogenated amorphous silicon (a-Si:H) solar cells due to the advantages of using lossless material and easily scalable assembly. In this paper, we demonstrate numerically that the front-sided integration of high-index subwavelength titanium dioxide (TiO2) nanosphere arrays can significantly enhance the light absorption in 100?nm-thick a-Si:H thin films and thus the power conversion efficiencies (PCEs) of related solar cells. The main reason behind is firmly attributed to the strong scattering effect excited by TiO2 nanospheres in the whole waveband, which contributes to coupling the light into a-Si:H layer via two typical ways: 1) in the short-waveband, the forward scattering of TiO2 nanospheres excite the Mie resonance, which focuses the light into the surface of the a-Si:H layer and thus provides a leaky channel; 2) in the long-waveband, the transverse waveguided modes caused by powerful scattering effectively couple the light into almost the whole active layer. Moreover, the finite-element simulations demonstrate that photocurrent density (Jph) can be up to 15.01?mA/cm(2), which is 48.76% higher than that of flat system.

| S-EPMC4960586 | biostudies-literature

High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors.

Project description:Two-dimensional molybdenum disulfide (MoS2) is a promising material for ultrasensitive photodetector owing to its favourable band gap and high absorption coefficient. However, their commercial applications are limited by the lack of high quality p-n junction and large wafer scale fabrication process. A high speed Si/MoS2 p-n heterojunction photodetector with simple and CMOS compatible approach has been reported here. The large area MoS2 thin film on silicon platform has been synthesized by sulfurization of RF-sputtered MoO3 films. The fabricated molecular layers of MoS2 on silicon offers high responsivity up to 8.75?A/W (at 580?nm and 3?V bias) with ultra-fast response of 10??sec (rise time). Transient measurements of Si/MoS2 heterojunction under the modulated light reveal that the devices can function up to 50?kHz. The Si/MoS2 heterojunction is found to be sensitive to broadband wavelengths ranging from visible to near-infrared light with maximum detectivity up to ?1.4?×?1012 Jones (2?V bias). Reproducible low dark current and high responsivity from over 20 devices in the same wafer has been measured. Additionally, the MoS2/Si photodetectors exhibit excellent stability in ambient atmosphere.

| S-EPMC5345101 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data