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Resistive memory for harsh electronics: immunity to surface effect and high corrosion resistance via surface modification.

ABSTRACT: The tolerance/resistance of the electronic devices to extremely harsh environments is of supreme interest. Surface effects and chemical corrosion adversely affect stability and operation uniformity of metal oxide resistive memories. To achieve the surrounding-independent behavior, the surface modification is introduced into the ZnO memristors via incorporating fluorine to replace the oxygen sites. F-Zn bonds is formed to prevent oxygen chemisorption and ZnO dissolution upon corrosive atmospheric exposure, which effectively improves switching characteristics against harmful surroundings. In addition, the fluorine doping stabilizes the cycling endurance and narrows the distribution of switching parameters. The outcomes provide valuable insights for future nonvolatile memory developments in harsh electronics.

SUBMITTER: Huang TH

PROVIDER: S-EPMC3957131 | biostudies-literature | 2014

REPOSITORIES: biostudies-literature

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Resistive memory for harsh electronics: immunity to surface effect and high corrosion resistance via surface modification.

Huang Teng-Han TH Yang Po-Kang PK Lien Der-Hsien DH Kang Chen-Fang CF Tsai Meng-Lin ML Chueh Yu-Lun YL He Jr-Hau JH

Scientific reports 20140318

The tolerance/resistance of the electronic devices to extremely harsh environments is of supreme interest. Surface effects and chemical corrosion adversely affect stability and operation uniformity of metal oxide resistive memories. To achieve the surrounding-independent behavior, the surface modification is introduced into the ZnO memristors via incorporating fluorine to replace the oxygen sites. F-Zn bonds is formed to prevent oxygen chemisorption and ZnO dissolution upon corrosive atmospheric ...[more]

PMID: 24638086

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