Ontology highlight
ABSTRACT:
SUBMITTER: Yang PK
PROVIDER: S-EPMC4601025 | biostudies-literature | 2015 Oct
REPOSITORIES: biostudies-literature
Yang Po-Kang PK Ho Chih-Hsiang CH Lien Der-Hsien DH Durán Retamal José Ramón JR Kang Chen-Fang CF Chen Kuan-Ming KM Huang Teng-Han TH Yu Yueh-Chung YC Wu Chih-I CI He Jr-Hau JH
Scientific reports 20151012
A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 10(4) sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent expo ...[more]